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A kind of SIC bonded ceramic matrix composite material and preparation method thereof

A technology of composite materials and ceramic substrates, applied in the field of ceramic matrix composite materials and their preparation, can solve the problems of low bending strength of composite materials, low sintering temperature, and low density of composite materials, so as to ensure high temperature performance and room temperature bending High strength and good wear resistance

Active Publication Date: 2017-02-22
SUZHOU HONGJIU AVIATION THERMAL MATERIALS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The silicon carbide ceramic matrix composite material is prepared by polycarbosilane impregnation and pyrolysis method, the sintering temperature is low, and no sintering aid is required to reduce product impurities, but the prepared composite material has low density and low bending strength

Method used

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  • A kind of SIC bonded ceramic matrix composite material and preparation method thereof
  • A kind of SIC bonded ceramic matrix composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Using ceramic powder as the base material and polycarbosilane-xylene solution as the binder, the mass ratio of the ceramic powder to the binder is 6:1, and stir evenly for 10 minutes;

[0023] (2) Put the above-mentioned compound into the mould, and press and pre-press molding, and the pressure is at 5MPa;

[0024] (3) Put the green body above into an oven to dry, the temperature is 80°C, and the drying time is 2h;

[0025] (4) Curing at 180°C for 5 hours, rising to high temperature cracking under vacuum atmosphere, the cracking temperature is 1100°C;

[0026] (5) After the immersion cracking is completed, the temperature is raised to the reaction temperature under a vacuum atmosphere, and a certain amount of trichloromethylsilane is introduced, hydrogen is used as a carrier gas, and argon is used as a diluent gas to infiltrate silicon carbide with chemical vapor phase. The reaction temperature is 1100 ° C. The flow rate of chlorosilane is 30 sccm, the flow rate of...

Embodiment 2

[0029] (1) Using ceramic powder as the base material and polycarbosilane-xylene solution as the binder, the mass ratio of the ceramic powder to the binder is 8:1, and stir evenly for 15 minutes;

[0030] (2) put the above-mentioned mixture into the mould, and pre-press molding, the pressure is at 10MPa;

[0031] (3) Put the above green body into an oven to dry, the temperature is 90°C, and the drying time is 1.5h;

[0032] (4) Curing at 185°C for 4 hours, rising to high temperature cracking under vacuum atmosphere, the cracking temperature is 1000°C;

[0033] (5) After the immersion cracking is completed, the temperature is raised to the reaction temperature under a vacuum atmosphere, a certain amount of trichloromethylsilane is introduced, hydrogen is used as a carrier gas, and argon is used as a diluent gas to infiltrate silicon carbide with chemical vapor phase. The reaction temperature is 1150 ° C. The flow rate of chlorosilane is 30 sccm, the flow rate of hydrogen gas is...

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Abstract

The invention discloses a SiC bonded ceramic matrix composite material and a preparation method thereof. The SiC bonded ceramic matrix composite material comprises an inorganic ceramic substrate, a precursor infiltration and pyrolysis (PIP)-SiC bonder and a chemical vapor infiltration (CVI)-SiC bonder; the SiC bonders are inlaid in the ceramic substrate and are closely combined with the ceramic substrate; the inorganic ceramic substrate is silicon carbide, silicon nitride, boron nitride or boron carbide. The preparation method comprises the following steps: by taking ceramic powder as a base material and a polycarbosilane-dimethylbenzene solution as a bonder, forming a prefabricated part by mould pressing, and preparing the high-density SiC bonded ceramic matrix composite material by combination of the PIP and CVI processes. A sintering assistant is not added, a product is good in high-temperature performance, high in room-temperature bending strength and good in wear resistance, particles are toughened, and silicon carbide is high in hardness.

Description

technical field [0001] The invention relates to a ceramic matrix composite material and a preparation method thereof, in particular to a SiC bonded ceramic matrix composite material and a preparation method thereof. Background technique [0002] Ceramic materials have excellent properties such as high temperature resistance, low density, high specific strength, high specific modulus, oxidation resistance and ablation resistance, making them have the potential to replace metals as a new generation of high-temperature structural materials. However, the fatal weaknesses of ceramic materials such as high brittleness and poor reliability hinder its practical application. Therefore, several types of ceramic toughening methods have been developed, including particle toughening, whisker toughening, and fiber toughening. Due to the improvement of fracture toughness, thermal shock resistance and isotropic properties, particle toughened ceramic matrix composites have attracted people'...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B37/00
Inventor 陈照峰余盛杰
Owner SUZHOU HONGJIU AVIATION THERMAL MATERIALS TECH CO LTD