A kind of SIC bonded ceramic matrix composite material and preparation method thereof
A technology of composite materials and ceramic substrates, applied in the field of ceramic matrix composite materials and their preparation, can solve the problems of low bending strength of composite materials, low sintering temperature, and low density of composite materials, so as to ensure high temperature performance and room temperature bending High strength and good wear resistance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0022] (1) Using ceramic powder as the base material and polycarbosilane-xylene solution as the binder, the mass ratio of the ceramic powder to the binder is 6:1, and stir evenly for 10 minutes;
[0023] (2) Put the above-mentioned compound into the mould, and press and pre-press molding, and the pressure is at 5MPa;
[0024] (3) Put the green body above into an oven to dry, the temperature is 80°C, and the drying time is 2h;
[0025] (4) Curing at 180°C for 5 hours, rising to high temperature cracking under vacuum atmosphere, the cracking temperature is 1100°C;
[0026] (5) After the immersion cracking is completed, the temperature is raised to the reaction temperature under a vacuum atmosphere, and a certain amount of trichloromethylsilane is introduced, hydrogen is used as a carrier gas, and argon is used as a diluent gas to infiltrate silicon carbide with chemical vapor phase. The reaction temperature is 1100 ° C. The flow rate of chlorosilane is 30 sccm, the flow rate of...
Embodiment 2
[0029] (1) Using ceramic powder as the base material and polycarbosilane-xylene solution as the binder, the mass ratio of the ceramic powder to the binder is 8:1, and stir evenly for 15 minutes;
[0030] (2) put the above-mentioned mixture into the mould, and pre-press molding, the pressure is at 10MPa;
[0031] (3) Put the above green body into an oven to dry, the temperature is 90°C, and the drying time is 1.5h;
[0032] (4) Curing at 185°C for 4 hours, rising to high temperature cracking under vacuum atmosphere, the cracking temperature is 1000°C;
[0033] (5) After the immersion cracking is completed, the temperature is raised to the reaction temperature under a vacuum atmosphere, a certain amount of trichloromethylsilane is introduced, hydrogen is used as a carrier gas, and argon is used as a diluent gas to infiltrate silicon carbide with chemical vapor phase. The reaction temperature is 1150 ° C. The flow rate of chlorosilane is 30 sccm, the flow rate of hydrogen gas is...
PUM
| Property | Measurement | Unit |
|---|---|---|
| density | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 

