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Method for preparing high-seebeck-coefficient tellurium/tellurium oxide nanocomposite with solvothermal

A nanocomposite material and tellurium oxide technology, which is applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, nanotechnology, etc., can solve problems such as inaccessibility, and achieve simple devices, high Seebeck coefficient, highly controllable effect

Inactive Publication Date: 2015-02-18
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Te-based nanostructures have been extensively studied recently, the highest Seebeck coefficient values ​​of the resulting products do not reach 10 mVK -1 , so far, the Seebeck coefficient has been reported up to 45mVK -1 , therefore, researchers need to explore new methods to improve the Seebeck coefficient

Method used

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  • Method for preparing high-seebeck-coefficient tellurium/tellurium oxide nanocomposite with solvothermal
  • Method for preparing high-seebeck-coefficient tellurium/tellurium oxide nanocomposite with solvothermal
  • Method for preparing high-seebeck-coefficient tellurium/tellurium oxide nanocomposite with solvothermal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Pour 12.5mL of ethylene glycol solution into a 25mL polytetrafluoroethylene liner and place it in the middle of the magnetic stirrer. Add 0.041g of sodium acetate, 0.056g of sodium tellurite and 0.2g of PVP into the polytetrafluoroethylene liner in sequence, and stir magnetically at room temperature. After mixing evenly, close the autoclave and put it into a constant temperature oven.

[0024] (2) The above-mentioned constant temperature oven is heated from room temperature to 180 °C at a rate of 15 °C / min, kept at 180 °C for 8 hours, and then naturally cooled to room temperature to obtain uniform single crystal tellurium nanowires.

[0025] (3) After completing step (2), place the single crystal tellurium nanowires in a petri dish for 30 days, and the resulting product is Te / TeO 2 nanocomposites. The resulting product was directly observed under a scanning electron microscope and a transmission electron microscope, as figure 1 As shown, a large number of particle...

Embodiment 2

[0027] (1) Pour 12.5mL of ethylene glycol solution into a 25mL polytetrafluoroethylene liner and place it in the middle of the magnetic stirrer. Add 0.041g of sodium acetate, 0.056g of sodium tellurite and 0.2g of PVP into the polytetrafluoroethylene liner in sequence, and perform magnetic force at room temperature. After mixing evenly, close the autoclave and put it into a constant temperature oven.

[0028] (2) The above-mentioned constant temperature oven is heated from room temperature to 180 °C at a rate of 15 °C / min, kept at 180 °C for 6 hours, and then naturally cooled to room temperature to obtain uniform single crystal tellurium nanowires.

[0029] (3) After completing step (2), place the single crystal tellurium nanowires in a petri dish for 20 days, and the resulting product is Te / TeO 2 nanocomposites.

Embodiment 3

[0031] (1) Pour 12.5mL of ethylene glycol solution into a 25mL polytetrafluoroethylene liner and place it in the middle of the magnetic stirrer. Add 0.041g of sodium acetate, 0.056g of sodium tellurite and 0.2g of PVP into the polytetrafluoroethylene liner in sequence, and stir magnetically at room temperature. After mixing evenly, close the autoclave and put it into a constant temperature oven.

[0032] (2) The above-mentioned constant temperature oven is heated from room temperature to 160 °C at a rate of 15 °C / min, kept at 160 °C for 10 hours, and then naturally cooled to room temperature to obtain uniform single crystal tellurium nanowires.

[0033] (3) After completing step (2), place the single crystal tellurium nanowires in a petri dish for 25 days, and the resulting product is Te / TeO 2 nanocomposites.

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Abstract

The invention discloses a method for preparing a high-seebeck-coefficient tellurium / tellurium oxide nanocomposite with solvothermal. The method includes: adopting a solvothermal method, weighing sodium tellurite, sodium acetate and PVP (polyvinyl pyrrolidone), sequentially adding ethylene glycol as solvent and reductant with uniform mixing at normal temperature, then pouring the obtained mixed solution into a reaction kettle, putting the reaction kettle into a contact-temperature box for reaction, and naturally cooling the reaction kettle to the room temperature after reaction to obtain products, namely tellurium nanowires; putting the tellurium nanowires in a culture dish prior to placing the culture dish in the constant-temperature box for several days so as to obtain a product, namely Te / TeO2 nanocomposite. The seebeck coefficient of one single nanowire is up to 81mVK-1 which is the maximum value so far. The method is simple in technique, low in equipment requirement, high in controllable degree, low in cost and high in product purity, and is a good way for preparing the Te / TeO2 nanocomposite.

Description

technical field [0001] The invention relates to the technical field of new energy thermoelectric conversion materials, in particular to a method for preparing a high Seebeck coefficient tellurium / tellurium oxide nanocomposite material by solvothermal. technical background [0002] The thermoelectric conversion efficiency of thermoelectric materials depends on the dimensionless thermoelectric figure of merit (ZT) ZT = α 2 σTκα is the Seebeck coefficient, σ is the electrical conductivity, Κ is the thermal conductivity, and T is the absolute temperature. and is equal to the lattice thermal conductivity K L and carrier thermal conductivity K C sum (K C =L 0 Tσ,L 0 is the Lorenz constant). Decreasing Κ, increasing α and σ are three ways to increase ZT value. From the expression of the thermoelectric figure of merit, it can be seen that the Seebeck coefficient has a square relationship with the ZT value, so increasing the Seebeck coefficient to achieve a large increase in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34B82Y40/00H10N10/852H10N10/01
Inventor 吴小平史建君王顺利韩孟健顾杰
Owner ZHEJIANG SCI-TECH UNIV
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