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A low loss, high resistivity bi 4 ti 3 o 12 Preparation method of lead-free piezoelectric ceramics

A high-resistivity, lead-free piezoelectric technology, applied in the field of ferroelectric ceramics, can solve the problems of material depolarization, component heating damage, loss of piezoelectric performance, etc., achieve grain refinement, and reduce leakage current. , the effect of uniform size

Active Publication Date: 2018-01-05
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

High dielectric loss will convert a large part of the electrical energy of the piezoelectric element into heat energy during the working process, causing depolarization of the material, loss of piezoelectric performance, and even damage to the element due to heating

Method used

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  • A low loss, high resistivity bi <sub>4</sub> ti <sub>3</sub> o <sub>12</sub> Preparation method of lead-free piezoelectric ceramics
  • A low loss, high resistivity bi <sub>4</sub> ti <sub>3</sub> o <sub>12</sub> Preparation method of lead-free piezoelectric ceramics
  • A low loss, high resistivity bi <sub>4</sub> ti <sub>3</sub> o <sub>12</sub> Preparation method of lead-free piezoelectric ceramics

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preparation example Construction

[0024] The preparation method of the present invention specifically comprises:

[0025] Step 1: Bismuth oxide Bi 2 o 3 and titanium dioxide TiO 2According to the molar ratio (2~3):(3~4), powder A is obtained after mixing the ingredients, according to the mass ratio, powder A: zirconia ball stone: distilled water = 1: (1~8): (0.8~1.2 ), after mixing, ball mill in a ball mill tank for 4 to 8 hours;

[0026] Step 2: Dry the powder A after ball milling in step 1 in a constant temperature oven at 60-80°C for 8-24 hours, grind and briquette, and pre-fire in a muffle furnace. The pre-fire conditions are: In the process, according to the heating and cooling rates of 3-6°C / min, firstly, the temperature was raised from room temperature to 400°C and kept for 10 minutes; then the temperature was raised from 400°C to 800-850°C and kept for 2-3 hours; Cool down to 400°C; finally cool down to room temperature with the furnace; grind again to get Bi 4 Ti 3 o 12 Powder;

[0027] Step 3...

Embodiment 1

[0032] Step 1: Bismuth oxide (Bi 2 o 3 ) and titanium dioxide (TiO 2 ) is accurately weighed according to the molar ratio of 2:3; the weighed and mixed material is used as the material according to the mass ratio: ball: water = 1:1:1.2 and put into the ball mill jar for 4 hours of ball milling process;

[0033] Step 2: After the ball milling is completed, put it in a constant temperature box and dry it at 70°C for 18 hours; take the material and grind it, press it into a block, and pre-fire it in a muffle furnace. The heating rate is 4°C / min, and the temperature is kept for 10 minutes; then the temperature is raised from 400°C to 800°C, the heating rate is 5°C / min, and the temperature is kept for 2 hours; then the temperature is lowered from 800°C to 400°C, and the cooling rate is 5°C / min; The furnace was cooled to room temperature; grinding again gave Bi 4 Ti 3 o 12 Powder;

[0034] Step 3: Bi obtained after calcining and grinding 4 Ti 3 o 12 Add Fe to the powder 2 ...

Embodiment 2

[0037] Step 1: Bismuth oxide (Bi 2 o 3 ) and titanium dioxide (TiO 2 ) is accurately weighed according to the molar ratio of 2:4; the weighed mixed material is used as the material according to the mass ratio: ball: water = 1:8:1.2, and put it into a ball mill jar for 4 hours of ball milling;

[0038] Step 2: After the ball milling is completed, put it in a constant temperature box and dry it at 80°C for 8 hours; take the material and grind it, press it into a block, and pre-fire it in a muffle furnace. 3~6°C / min, firstly, the temperature is raised from room temperature to 400°C, and kept for 10 minutes; then the temperature is raised from 400°C to 820°C, and held for 3 hours; 4 Ti 3 o 12 Powder;

[0039] Step 3: Bi obtained after calcining and grinding 4 Ti 3 o 12 Add Fe to the powder 2 o 3 , Bi 4 Ti 3 o 12 powder and added Fe 2 o 3 The molar ratio is 1:0.01; put the weighed and mixed material into the material according to the mass ratio: ball: water = 1:8:1.2...

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Abstract

The invention relates to a preparation method for low-loss and high-resistivity Bi4Ti3O12-based lead-free piezoelectric ceramics. The preparation method comprises the following steps: preparing Bi4Ti3O12 powder from bismuth oxide and titanium dioxide, doping Fe2O3 into the Bi4Ti3O12 powder, performing ball milling, drying, grinding, granulation and pressing forming, and performing sintering at 1,000 to 1,100 DEG C to obtain the low-loss and high-resistivity Bi4Ti3O12-based lead-free piezoelectric ceramics. According to the preparation method for the Bi4Ti3O12-based lead-free piezoelectric ceramics, a preparation process is simple, the requirements of industrial production are met, a doped substance is simple and readily available, and compared with BIT ceramics, crystalline grains of the Bi4Ti3O12-based lead-free piezoelectric ceramics are finer and more uniform; the dielectric loss for the preparation of the ceramics is reduced, the electrical conductivity is high, and the piezoelectric activity is high; the prepared ceramics is high in purity, and does not contain any other impurity as well as a harmful compound such as Pb, and the manufacturing requirements of a green electronic material are met.

Description

technical field [0001] The invention relates to the field of ferroelectric ceramics, in particular to a low loss, high resistivity Bi 4 Ti 3 o 12 Preparation method of lead-free piezoelectric ceramics. Background technique [0002] Bismuth titanate (Bi 4 Ti 3 o 12 ) and its doped ferroelectric materials are especially suitable for the preparation of ferroelectric memory and high temperature piezoelectric Ceramic devices have received widespread attention. Structurally, Bi 4 Ti 3 o 12 Belonging to the Aurivillius layered structure, two adjacent (Bi 2 o 2 ) 2+ There are three layers in between (Bi 2 Ti 3 o 10 ) 2- structure. In terms of electricity, Bi 4 Ti 3 o 12 (BIT) is a typical bismuth layer structure ferroelectric compound with m=3. Above the Curie point (T c =675°C) above the temperature, its crystal belongs to the paraelectric phase structure of the tetragonal system; c The timing corresponds to the monoclinic ferroelectric phase, which is an m-p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/475C04B35/622
Inventor 蒲永平刘雨雯
Owner SHAANXI UNIV OF SCI & TECH
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