Novel buffer layer zinc oxide-sulfur target material and preparation method thereof

A technology of zinc oxide sulfur and buffer layer, applied in coating, superimposed layer plating, metal material coating process, etc., can solve the problems of difficult to manufacture in large size, high investment cost, low density, etc.

Active Publication Date: 2015-03-11
赣州市创发光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional manufacturing of ZnO, ZnS, MgO, ZnSe and other targets uses hot pressing and equal pressure methods, which...

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  • Novel buffer layer zinc oxide-sulfur target material and preparation method thereof
  • Novel buffer layer zinc oxide-sulfur target material and preparation method thereof

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Effect test

Embodiment 1

[0016] A method for preparing a new type of buffer layer zinc oxide sulfur target material, adding 10.0wt% zinc sulfide to zinc oxide to form a powder material, and then fully mixing with zirconia balls, pure water, and dispersant grinding, the mass ratio is: powder material : Zirconia balls: pure water: dispersant = 0.8:2.5:0.20:0.005; grind for 4 hours to form a slurry, then pour the slurry into a porous mold, after 12 hours of drying, release the film to form a multi-component oxidation The theoretical density of compound and sulfide mixture is 5.0g / cm 3 Then, after sintering at 800°C and 3 hours, a high-density target body for sputtering is formed, which is cut and surface ground into a target for vacuum magnetron sputtering, and the target is measured by the Archimedes method Density: with glass as the base material, put it into the vacuum magnetron sputtering machine, firstly, the vacuum pumping system will pump the background pressure of the sputtering chamber to 0.7×10...

Embodiment 2

[0019] A method for preparing a new type of buffer layer zinc oxide sulfur target material, adding 25.0wt% zinc sulfide to zinc oxide to form a powder material, and then fully mixing with zirconia balls, pure water, and dispersant grinding, the mass ratio is: powder material : Zirconia Ball: Pure Water: Dispersant=1.0:3.0:0.25:0.005; Grind for 14 hours to form a slurry, then pour the slurry into a porous mold, after 24 hours of drying, release the film to form a multi-component oxidation The theoretical density of compound and sulfide mixture is 5.1 g / cm 3 Then, after sintering at 1000°C and 5 hours, a high-density target body for sputtering is formed, which is cut and surface ground into a target for vacuum magnetron sputtering, and the target is measured by the Archimedes method Density: with glass as the base material, put it into the vacuum magnetron sputtering machine, firstly, the vacuum pumping system will pump the background pressure of the sputtering chamber to 0.8×10...

Embodiment 3

[0022] A method for preparing a new type of buffer layer zinc oxide sulfur target material, adding 45.0wt% zinc sulfide to zinc oxide to form a powder material, and then fully mixing with zirconia balls, pure water, and dispersant grinding, the mass ratio of which is: powder material : Zirconia balls: pure water: dispersant = 1.2:3.5:0.30:0.005; after grinding for 24 hours to form a slurry, then pour the slurry into a porous mold, after 36 hours of drying, the film is released to form a multi-component oxidation The theoretical density of compound and sulfide mixture is 5.2 g / cm 3 Then, after sintering at 1200°C and 24 hours, a high-density target body for sputtering is formed, which is cut and surface ground into a target for vacuum magnetron sputtering, and the target is measured by the Archimedes method Density: with glass as the base material, put it into the vacuum magnetron sputtering machine, firstly, the vacuum pumping system will pump the background pressure of the sp...

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Abstract

The invention aims to provide a method for preparing a novel buffer layer zinc oxide-sulfur target material. The target material is mainly composed of zinc oxide, at the same time vulcanized magnesium, vulcanized zinc, and a third oxide are added, and the buffer layer carrier concentration is controlled to obtain a better PN characteristic. The preparation method of the multi-oxide target material comprises firstly-used technologies of slurry casting and mid-high temperature sintering so as to improve the target material uniformity and compactness, prolong the target material service life, increase the utilization rate of the target material, and improve the quality and performance of sputtered film. Through the formula design and improved target material quality, the conversion rate of CIGS solar battery is improved, the production cost is reduced, and the demand on batch production is fulfilled.

Description

technical field [0001] The invention relates to a method for preparing a novel target material, in particular to a method for preparing a novel buffer layer zinc oxide sulfur target material for copper indium gallium selenium photovoltaic cells. Background technique [0002] The demand for global energy is increasing year by year. With the rising awareness of energy conservation and environmental protection, the development of renewable energy is a common goal in the world. In terms of renewable energy, regardless of hydropower, wind power, and geothermal power generation, it is necessary to use kinetic energy conversion to obtain conversion efficiency. Solar power generation is a power generation system that converts sunlight into electrical energy. There are no moving parts in a solar power generation system, unlike wind power, hydraulic power, geothermal power generation systems that require rotating machinery, so there will be no high temperature, high pressure and Nois...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/14C23C14/08C04B35/453C04B35/622
CPCC23C14/086C23C14/3414C23C14/35C23C28/34
Inventor 黄信二
Owner 赣州市创发光电科技有限公司
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