Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises an active region and a passive region, wherein the active region comprises a plurality of active region units; the multiple active region units are arranged in the length direction of the semiconductor device in a staggering manner, and are arranged in the width direction of the semiconductor device in the staggering manner. The overall length of the semiconductor device is increased, the radiating area of the semiconductor device is increased, the heat dissipation of heat is quickened, and the internal temperature in the semiconductor device is uniformly distributed; the width-length ratio of the entire semiconductor device is reduced, the influence of increase of the width-length ratio on the performance of the device is reduced, and the subsequent process difficulty can also be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Gallium nitride semiconductor devices have significant advantages such as large band gap, high electron mobility, high breakdown field strength, and high temperature resistance. They are suitable for the production of high temperature, high voltage, high frequency, and high power electronic devices, and have broad application prospects. [0003] See figure 1 , figure 1 Shows a schematic top view of a gallium nitride semiconductor device in the prior art, the gallium nitride semiconductor device shown includes an active region a and a passive region b, the active region a is in a closed form, and the region outside the active region a It is the passive region b, the source 11, the drain 12 and the gate 13 in the active region a are repeatedly arranged in the width direction of the dev...

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Problems solved by technology

[0003] See figure 1 , figure 1 Shows a schematic top view of a gallium nitride semiconductor device in the prior art, the gallium nitride semiconductor device shown includes an active region a and a passive region b, the active region a is in a closed form, and the region outside the active region a It is the passive region b, the source 11, the drain 12 and the gate 13 in the active region a are repeatedly arranged in the width direction of the device to form an overall finger-like structure, the entire semiconductor device is rectangular, and the drain 14 is located in the non-active region. The drain interconnection metal 14 in the source region is connected together, the gate 13 is connected together through the gate interconnection metal 131, and the signal from the outside is received through the lead pad 15, but because the power density of the GaN semiconductor device is very high , so its heat density is also very high, resulting in very large heat generated by GaN semiconductor devices during operation. If the heat cannot be dissipated in time, it will cause the internal temperature of GaN semiconductor devices to rise and affect the stability of the devices. and reliability, while limiting the further improvement of the output power of the gallium nitride semiconductor device. In addition, most of the area of ​​the gallium nitride semiconductor device in the prior art is the active region a, and the heat in the central area of ​​the gallium nitride semiconductor device It cannot be conducted in time through the lateral path, and the thermal conductivity of the vertical path will reach saturation, which will eventually cause the temperature in the center area of ​​the GaN semiconductor device to be high and the edge temperature to be low, that is, the temperature distribution is uneven, which will degrade the characteristics of the GaN semiconductor device and reduced reliability

[0004] See figure 2 , figure 2 It shows a schematic top view of a gallium nitride semiconductor device with an increased heat dissipation area in the prior art, figure 2 The gallium nitride semiconductor device shown increases the distance between gates 13 (Gate to gate space), increases the heat dissipation area by enlarging the width of the entire gallium nitride semiconductor device, and improves heat dissipation, but this will make the entire nitride Gallium semiconductor devices are very wide, so that the width-to-length ratio of gallium nitride semiconductor devices will be very large, resulting in increased difficulty in subsequent processes (such as cutting and packaging, etc.), reduced yield, and reduced performance (increased gate resistance or out-of-phase RF signals) Synchronization), etc., and the heat in the central area of ​​the gallium nitride semiconductor device still cannot be dissipated in time, the central temperature is still the highest, the edge temperature is low, and the temperature distribution is still uneven

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