Epoxy resin compound for sealing semiconductor and semiconductor device

A technology of epoxy resin and composition, applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as doubts about reliability characteristics, and achieve excellent hot water extraction characteristics and high-temperature storage reliability. Excellent effect with excellent formability

Active Publication Date: 2015-05-20
SHIN ETSU CHEM IND CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Epoxy resin is a well-balanced thermosetting resin with excellent formability, adhesion to substrates, and m

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Epoxy resin compound for sealing semiconductor and semiconductor device
  • Epoxy resin compound for sealing semiconductor and semiconductor device
  • Epoxy resin compound for sealing semiconductor and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0080] Examples and comparative examples of epoxy resin compositions are shown below to specifically illustrate the present invention, but the present invention is not limited by the following examples.

Synthetic example A

[0082] Under a nitrogen atmosphere, 4.8 g (119 mmol) of sodium hydroxide (NaOH) was suspended in 50 ml of tetrahydrofuran (THF) at 0°C, and 10.2 g (108 mmol) of phenol, 4,4'-sulfonyldiphenol 0.45g (1.8mmol) of THF50ml solution. After stirring for 30 minutes, a THF50 ml solution of 12.5 g (36.0 mmol) of hexachlorotriphosphazene was added dropwise, and the mixture was heated to reflux for 5 hours. Into this, 5.2 g (130 mmol) of sodium hydroxide (NaOH) was suspended in 50 ml of THF at 0°C, and a solution of 11.2 g (119 mmol) of phenol in 50 ml of THF was added dropwise thereto, followed by further heating and reflux for 19 hours. After the solvent was distilled off under reduced pressure, chlorobenzene was added, dissolved, and extracted with 200 ml x 2 of 5 mass % NaOH aqueous solution, 200 ml x 2 of 5 mass % sulfuric acid aqueous solution, 200 ml x 2 of 5 mass % sodium bicarbonate aqueous solution, and 200 ml x 2 of water . The solvent was distilled off under reduced pressure...

Embodiment 1～5、 comparative example 1～7

[0086] The components shown in Tables 1 and 2 were uniformly melt-mixed with hot twin rolls, cooled, and pulverized to obtain an epoxy resin composition for semiconductor sealing. Using these compositions, each characteristic of the following (i)-(iv) was measured, and the results are shown in Tables 1 and 2 together.

[0087] (i) Flame retardancy

[0088] Based on the UL-94 standard, the flame retardancy of a 1 / 16 inch thick board was examined. Furthermore, a 1 / 16-inch thick plate is passed at a temperature of 175°C and a forming pressure of 6.9N / mm 2 1. Molded under the condition of molding time of 120 seconds, and post-cured at 180°C for 4 hours.

[0089] (ii) Adhesion to Cu / Ag plated lead frame stored at high temperature

[0090] At a temperature of 175°C and a molding pressure of 6.9N / mm 21. Mold the epoxy resin composition on a 100pin-QFP frame (Cu alloy C7025, Ag plating on the die pad) under the condition of molding time of 120 seconds, and post-cure at 180° C. for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
The average particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides an epoxy resin compound for sealing a semiconductor and a semiconductor device, wherein the plating adhesiveness of CuLF with Ag is excellent even stored for a long time at a high temperature of 175-250 DEG C. Meanwhile, no Cu line, Cu line/AL cushion or broken line exists, and the corrosion reliability is excellent. The epoxy resin compound for sealing the semiconductor is characterized by comprising the following parts as essential ingredients: (A) epoxy resin, (B) curing agent, (C) inorganic filling agent, (D) potassium oxide/ bismuth subcarbonate, and (E) phosphazene, wherein the compound does not contain bromide, red phosphorous, phosphoric acid ester and antimony compounds basically.

Description

technical field [0001] The present invention relates to an epoxy resin composition for encapsulating semiconductors that is excellent in reliability when left at high temperature for a long time, has little peeling from Cu lead frame (LF) and Ag plated parts, and does not cause corrosion or migration of Cu wires, and a cured product thereof Hermetically sealed semiconductor device. Background technique [0002] In recent years, environmental measures at the global level, such as measures against global warming and energy conversion from fossil fuels, have been promoted. As for automobiles, the number of hybrid vehicles and electric vehicles produced has been increasing. In addition, household electrical equipment in emerging countries such as China and India are increasingly equipped with inverter motors as energy-saving measures. [0003] In the hybrid vehicles, electric vehicles, and inverters described above, power semiconductors that perform the functions of converting ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C08L63/00C08K13/06C08K3/22C08K3/24C08K5/5399C08K9/06C08K3/36C08G59/40H01L23/29
CPCC08G59/3218C08K3/22C08K3/26C08K5/5399C08L63/00H01L23/295
Inventor 长田将一横田龙平
Owner SHIN ETSU CHEM IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap