Organic electroluminescence device and production method thereof
An electroluminescent device and electroluminescent technology, which can be used in organic light-emitting devices, organic light-emitting device structures, organic semiconductor devices, etc., and can solve the problems of poor mechanical strength, high cost, and heavy weight.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2015-05-20
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the field of organic electroluminescence, in particular to an organic electroluminescence device and a preparation method thereof. Background technique
[0002] An organic electroluminescent device (OLED) is an energy conversion device that uses organic materials as light-emitting materials and can convert applied electrical energy into light energy. It has outstanding performances such as ultra-thin, self-luminous, fast response, low power consumption, etc., and has extremely broad application prospects in display, lighting and other fields.
[0003] Organic electroluminescent materials are particularly sensitive to oxygen and moisture intrusion. On the one hand, because oxygen is a quencher, the quantum efficiency of luminescence will be significantly reduced, and the oxidation of oxygen to the hole transport layer will also reduce its transport ability; on the other hand, water vapor will hydrolyze organic compounds, making...
Examples
Embodiment 1
[0087] An organic electroluminescent device is prepared through the following steps:
[0088] (1) Provide a clean anode conductive substrate:
[0089] Clean the ITO glass substrate with acetone, ethanol, deionized water, and ethanol in an ultrasonic cleaner in sequence, wash and wash for 5 minutes in one item, then blow dry with nitrogen, and dry in an oven for later use; surface activation of the cleaned ITO glass processing; ITO thickness is 100nm;
[0090] (2) Vacuum evaporation of the luminescent functional layer on the ITO glass substrate:
[0091] Specifically, the light emitting functional layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer;
[0092] Preparation of the hole injection layer: the MoO 3 The mixture obtained by mixing with NPB according to the mass ratio of 3:7 is used as the material of the hole injection layer, the thickness is 10nm, and the vacuum degree is ...
Embodiment 2
[0110] An organic electroluminescent device is prepared through the following steps:
[0111] (1), (2), (3) are the same as embodiment 1;
[0112] (4) Prepare the encapsulation layer on the outside of the cathode:
[0113] The encapsulation layer is an alternately stacked inorganic barrier layer and a mixed barrier layer;
[0114] Fabrication of the inorganic barrier layer: the organic electroluminescent device sample prepared with the cathode is placed in the deposition chamber of the atomic layer deposition system, and then,
[0115] (a) The metal source Mg(CpEt) 2 Inject nitrogen into the deposition chamber and deposit on the cathode, the injection time is 20ms, and the nitrogen flow rate is 20sccm;
[0116] (b) Inject nitrogen gas to flush the deposition chamber, the injection time is 10s, and the flow rate is 20 sccm;
[0117] (c) Water vapor is then injected into the deposition chamber along with nitrogen gas to react with the metal source. The injection time is 20 m...
Embodiment 3
[0123] An organic electroluminescent device is prepared through the following steps:
[0124] (1), (2), (3) are the same as embodiment 1;
[0125] (4) Prepare the encapsulation layer on the outside of the cathode:
[0126] The encapsulation layer is an alternately stacked inorganic barrier layer and a mixed barrier layer;
[0127] Fabrication of the inorganic barrier layer: the organic electroluminescent device sample prepared with the cathode is placed in the deposition chamber of the atomic layer deposition system, and then,
[0128] (a) The metal source Ca(CpEt) 2 Inject nitrogen into the deposition chamber and deposit on the cathode, the injection time is 10ms, and the nitrogen flow rate is 10sccm;
[0129] (b) Inject nitrogen gas to flush the deposition chamber, the injection time is 5s, and the flow rate is 10 sccm;
[0130] (c) Water vapor is then injected into the deposition chamber along with nitrogen gas to react with the metal source. The injection time is 10 ms...