Organic electroluminescence device and preparation method thereof
An electroluminescent device and luminescence technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor refractive index, total reflection loss, and low light extraction performance
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[0038] The manufacturing method of the organic electroluminescent device 100 of an embodiment includes the following steps:
[0039] In step S110, the scattering layer 20 is prepared by electron beam evaporation on the surface of the glass substrate 10.
[0040] The scattering layer 20 is formed on one side surface of the glass substrate 10. The scattering layer 20 is composed of a metal material doped layer 201 and a calcium compound material doped layer 202. The metal material doped layer 201 is prepared on the bottom surface of the glass substrate 10 by thermal resistance evaporation. The metal material doped layer 201 It includes a metal material and a light-emitting material doped in the metal material, the work function of the metal material is -4.0eV~-5.5eV, and the light-emitting material is selected from 4-(dinitrile methyl)-2-butane Base-6-(1,1,7,7-tetramethyljulonidine-9-vinyl)-4H-pyran (DCJTB), 9,10-di-β-naphthyleneanthracene (ADN) , 4,4'-bis(9-ethyl-3-carbazole vinyl...
Embodiment 1
[0061] The structure prepared in this embodiment is a glass substrate / Au:Alq 3 / CaF 2 :MgO / ITO / MoO 3 / NPB / Alq 3 / TAZ / CsF / Ag organic electroluminescence device. In this embodiment and the following embodiments, " / " means layer, and ":" means doping.
[0062] The glass substrate is N-LASF44. Rinse the glass substrate with distilled water and ethanol, and soak it in isopropanol overnight. A scattering layer is prepared on a glass substrate. The scattering layer is composed of a metal material doped layer and a calcium compound material doped layer. The metal material doped layer is prepared by thermal resistance evaporation on the surface of the glass substrate. The material is Au:Alq 3 , Au and Alq 3 The mass ratio is 3.5:1 and the thickness is 35nm. Electron beam evaporation is used to prepare a calcium compound material doped layer on the surface of the metal material doped layer. The material is CaF 2 :MgO, CaF 2 The ratio of mass to MgO is 7:1, the thickness is 80nm, the energy d...
Embodiment 2
[0070] The structure prepared in this embodiment is a glass substrate / Al:ADN / CaCl 2 :MgS / IZO / MoO 3 / TAPC / ADN / TPBi / Cs 2 CO 3 / Al organic electroluminescent device.
[0071] The glass substrate is N-LAF36. After the glass substrate is rinsed with distilled water and ethanol, it is soaked in isopropanol for one night to prepare a scattering layer on the glass substrate. The scattering layer is doped with a metal material doped layer and a calcium compound material. Layer composition, the metal material doped layer is prepared by thermal resistance evaporation on the surface of the glass substrate, the material is Al:ADN, the mass ratio of Al to ADN is 4:1, the thickness is 10nm, and the electron beam is used on the surface of the metal material doped layer Preparation of doped layer of calcium compound material by evaporation, the material is CaCl 2 :MgS, CaCl 2 The ratio of mass to MgS is 15:1, the thickness is 100nm, and the energy density of electron beam evaporation is 10W / cm 2 ....
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