Method for rapidly preparing high-performance SiGe high-temperature thermoelectric alloy material

An alloy material and high-performance technology, which is applied in the field of rapid preparation of high-performance SiGe high-temperature thermoelectric alloy materials, can solve the problems of easy introduction of other impurities, high energy consumption of the preparation process, and expensive raw materials, and achieve high efficiency and energy saving, simple process, low cost effect

Active Publication Date: 2015-06-17
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, high-energy ball milling needs to use metallurgical-grade high-purity powder as raw material, and the raw material price is relatively expensive
In addition, the preparation cycle of the ball milling method is also relatively long, often requiring more than ten or even dozens of hours, so the preparation process consumes a lot of energy, and long-term ball milling is easy to introduce other impurities and cause oxidation of materials

Method used

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  • Method for rapidly preparing high-performance SiGe high-temperature thermoelectric alloy material
  • Method for rapidly preparing high-performance SiGe high-temperature thermoelectric alloy material
  • Method for rapidly preparing high-performance SiGe high-temperature thermoelectric alloy material

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Embodiment 1

[0036] A method for rapidly preparing SiGe high-temperature thermoelectric alloy materials, comprising the following steps:

[0037] 1) Press Si 80 Ge 20 P 2 The stoichiometric ratio of each atom is weighed. Weigh 2.2468g of Si simple mass, 1.4526g of Ge simple mass, 0.0619g of red phosphorus, the mass purity of simple Si mass ≥99.999%, the mass purity of single Ge mass ≥99.99%, granular red The mass purity of phosphorus is ≥99.999%, and then the weighed raw materials are vacuum-sealed in a glass tube;

[0038] 2) Place the glass tube filled with raw materials in step 1) in a high-frequency induction melting furnace, and evacuate to a temperature lower than 10 -2 Pa, and then filled with argon until the cavity pressure is -0.05MPa, and then applied a voltage of 380V for high-frequency induction melting, the corresponding current is 12A, and the melting process lasts for 3 minutes;

[0039] 3) Place the ingot body obtained in step 2) in a graphite crucible with a nozzle len...

Embodiment 2

[0044] A method for rapidly preparing SiGe high-temperature thermoelectric alloy materials, comprising the following steps:

[0045] 1) Press Si 80 Ge 20 P 2 The stoichiometric ratio of each atom is weighed. Weigh 2.2468g of Si simple mass, 1.4526g of Ge simple mass, 0.0619g of red phosphorus, the mass purity of simple Si mass ≥99.999%, the mass purity of single Ge mass ≥99.99%, granular red The mass purity of phosphorus is ≥99.999%, and then the weighed raw materials are vacuum-sealed in a glass tube;

[0046] 2) Place the glass tube filled with raw materials in step 1) in a high-frequency induction melting furnace, and evacuate to a temperature lower than 10 -2 Pa, and then filled with argon until the cavity pressure is -0.05MPa, and then applied a voltage of 380V for high-frequency induction melting, the corresponding current is 12A, and the melting process lasts for 3 minutes;

[0047] 3) Place the ingot body obtained in step 2) in a graphite crucible with a nozzle len...

Embodiment 3

[0052] A method for rapidly preparing SiGe high-temperature thermoelectric alloy materials, comprising the following steps:

[0053] 1) Press Si 80 Ge 20 P 10 The stoichiometric ratio of each atom is weighed, and 2.2468g of Si single mass block, 1.4526g of Ge single mass block, 0.3095g of red phosphorus are weighed, the mass purity of simple mass Si block is ≥99.999%, the mass purity of single mass Ge block is ≥99.99%, and granular red The mass purity of phosphorus is ≥99.999%, and then the weighed raw materials are vacuum-sealed in a glass tube;

[0054] 2) Place the glass tube filled with raw materials in step 1) in a high-frequency induction melting furnace, and evacuate to a temperature lower than 10 -2 Pa, and then filled with argon until the cavity pressure is -0.05MPa, and then applied a voltage of 380V for high-frequency induction melting, the corresponding current is 12A, and the melting process lasts for 3 minutes;

[0055] 3) Place the ingot body obtained in ste...

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Abstract

The invention discloses a method for rapidly preparing a high-performance SiGe high-temperature thermoelectric alloy material. The method comprises the following steps: (1), weighing various raw materials according to stoichiometric ratios of various Si80Ge20Px atoms, wherein x is 2-10; (2), carrying out high-frequency induction melting of the weighed raw materials, and naturally cooling to obtain an ingot; (3), carrying out melt-spinning of the obtained ingot so as to obtain a thin strip; and (4), grinding the obtained thin strip into powder, and carrying out discharge plasma activated sintering so as to obtain a SiGe high-temperature thermoelectric alloy. The method disclosed by the invention has the advantages of being short in preparation period, simple in process, high-efficiency, energy-saving and the like; the whole preparation process can be completed within 2 h; the conductivity of the prepared SiGe high-temperature thermoelectric alloy material is above 105 S/m; the power factor is above 3.5*10<-3> W/mK<2>; the thermoelectric performance optimal value ZT is up to 0.9 at 920 K; compared with the RTG level, the thermoelectric performance optimal value is increased by nearly 40%; and thus, the method disclosed by the invention has important practical application value.

Description

technical field [0001] The invention belongs to the technical field of preparation of new energy materials, and in particular relates to a method for rapidly preparing high-performance SiGe high-temperature thermoelectric alloy materials. Background technique [0002] Since entering the 21st century, the energy crisis and environmental problems have become increasingly severe. It is of great significance to develop and utilize new energy sources and improve energy utilization efficiency. Due to the characteristics of Seebeck effect and Peltier effect, thermoelectric materials can realize the direct conversion of heat energy and electric energy, and have broad application prospects in industrial waste heat, waste heat, automobile exhaust recovery and utilization, and thermoelectric refrigeration. The main parameter to characterize the performance of thermoelectric materials is the thermoelectric figure of merit ZT, ZT=α 2 σT / κ, where α is the Seebeck coefficient, σ is the e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/05B22F3/105B22D11/06H01L35/14
Inventor 唐新峰卢瑞明
Owner WUHAN UNIV OF TECH
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