A method for preparing nano-dielectric layer based on oxygen plasma process

Abstract

The invention describes a nano dielectric layer preparation method based on oxygen plasma process. The electron beam lithography technology is used for opening a square mask window in a base metal layer thin film. The oxygen plasma oxidation method is used for oxidizing the base metal layer thin film exposed at the mask window, and the process is specifically to etch for 1-5 minutes with oxygen flux of 10-50 sccm and power of 60-140 watt under a vacuum of 0.3-0.7 Torr by using oxygen plasmas. The mask is peeled after heating and ultrasound in a butanone reagent. The characterization result shows that the nano dielectric layer preparation method based on the oxygen plasma process can be used for successfully preparing a dielectric layer thin film with a certain oxidation proportion and certain thickness. The invention adopts the one-step method for in-situ oxidation on the surface of the base metal layer to generate the dielectric layer, is simple in preparation process, requires no additional material, is good in interface coherency, has fewer defects and is expected to be widely used in research and production.

Description

technical field [0001] The invention relates to a method for preparing a nano medium layer based on an oxygen plasma process, and belongs to the fields of microelectronics, solid electronics and nano science and technology. Background technique [0002] Tunneling diode (TD) is a new type of high-speed nano-device composed of quantum effect, which has high-frequency rectification characteristics. Commonly used tunneling diodes include resonant tunneling diode (RTD) and material-insulator-material tunneling diode (MIM-TD). Among them, MIM-TD has a simple structure and has attracted extensive attention. The intermediate insulating layer of MIM-TD is very thin. Under the action of tunneling effect, electrons can easily move from one layer of conductive material to another layer of conductive material. The tunneling time is as short as femtoseconds, which makes MIM-TD TD becomes the best choice for high frequency rectification. [0003] Generally, vacuum deposition methods, suc...

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Problems solved by technology

If such a method is selected, additional target material needs to be prepared during the preparation of the dielectric layer, which will lead to complex preparation operations of the dielectric layer, and theoretically there will be interface defects between the metal and the dielectric layer, which will affect the rectification function in severe cases

[0004] Based on the above, the current MIM-TD dielectric layer preparation process is complicated, requiring large-scale equipment such as magnetron sputtering or atomic layer deposition, and additional target materials are required, which leads to high cost in the device manufacturing process

At the same time, in the above manufacturing process, the possible interface defects are not conducive to obtaining devices with excellent performance

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