A kind of growth method of zno single crystal nano sheet

Abstract

The invention discloses a growing method of a ZnO single-crystal nanosheet. According to the method, pulsed laser deposition is used for assisting in Van der Waals epitaxy, and the ZnO single-crystal nanosheet with the high covering rate grows on a stratified material substrate where Van der Waals force acts. High energy is adopted for assisting in Van der Waals deposition so that ZnO can be crystallized on the substrate, energy losses in the deposition process are reduced in high vacuum environment, the preferred growth direction of the ZnO can be changed in cooperation with proper deposition temperature and annealing temperature, so that the ZnO preferably grows in the surface, the traditional character of preferred growth in the ZnO (001) direction is changed, no columnar ZnO grows any more, a ZnO plane structure grows out, and traditional integrated circuit process integration and compatibility are facilitated. The binding force of the ZnO nanosheet growing through the method and the substrate is weak, and the ZnO nanosheet can be easily transferred to other substrates to process a semiconductor nanometer device.

Description

technical field [0001] The invention relates to a growth method of ZnO single-crystal nanosheets, belonging to the field of growth and preparation of nanometer materials. Background technique [0002] Zinc oxide (ZnO) is a II-VI group direct bandgap wide bandgap semiconductor material. Its band gap at room temperature is 3.37eV, and its exciton binding energy can reach 60meV, which is much higher than GaN's 25meV and room temperature thermal energy (26meV). It is very suitable for manufacturing light-emitting and optoelectronic devices that work stably at room temperature. However, the work of growing ZnO single crystal is indeed a challenging work. Due to the lattice mismatch, the growth of conventional ZnO single crystal nanomaterials usually requires a catalyst or a buffer layer to relieve the stress between the substrate and ZnO. At present, the epitaxial growth of ZnO on Si and sapphire substrates requires a suitable buffer layer to achieve. Although GaN has a small ...

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Problems solved by technology

However, the physical properties of ZnO determine that it is preferentially grown on the c-axis in most cases, so most of the growth of ZnO grows into a nanorod or columnar crystal structure, even if van der Waals epitaxy is introduced in the growth, Columnar crystals such as ZnO nanorods are still obtained [5,6], which is not conducive to integration in integrated circuit processes

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