P type conductive film Nb<x>W<1-x>S<2> and preparation method thereof

A technology of nbxw1-xs2 and taxmo1-xs2, which is applied in the field of p-type conductive film NbxW1-xS2 and its preparation, can solve the problems of low Hall mobility of p-type conductive film, etc., and achieves low internal stress and high Hall mobility. Effect

Inactive Publication Date: 2015-11-11
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to avoid the deficiencies of the prior art, the present invention proposes a p-type conductive thin film Nb x W 1-x S 2 and preparation method to overcome the problem of low Hall mobility of the p-type conductive thin film in the prior art

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment is a p-type conductive film Nb x W 1-x S 2 , Nb x W 1-x S 2 The thickness of the film was 10 nm, and the doping amount x of Nb was 0.2.

[0024] The concrete preparation process of this embodiment is:

[0025] Step 1, cleaning the Si substrate. The cleaning process is as follows: first soak the Si substrate in 6% hydrofluoric acid solution for 10 minutes to remove the surface oxide film; then put the Si substrate in deionized water and clean it with ultrasonic waves, the power of which is 100W. The frequency of the ultrasonic wave is 26 kHz, and the cleaning time is 6 minutes; then the Si substrate is placed in anhydrous ethanol and cleaned by ultrasonic wave, the power of the ultrasonic wave is 100 W, the frequency of the ultrasonic wave is 26 kHz, and the cleaning time is 6 minutes, and a cleaned Si substrate is obtained. substrate.

[0026] Step 2, depositing Nb x W 1-x o 2 film. Deposition of Nb on Si Substrate by Radio Frequency Magnetro...

Embodiment 2

[0030] This embodiment is a p-type conductive film Nb x W 1-x S 2 , Nb x W 1-x S 2 The thickness of the film was 15 nm, and the doping amount x of Nb was 0.3.

[0031] The concrete preparation process of this embodiment is:

[0032] Step 1, cleaning the Si substrate. The cleaning process is as follows: first soak the Si substrate in 10% hydrofluoric acid solution for 7 minutes to remove the surface oxide film; then put the Si substrate in deionized water and clean it with ultrasonic waves. The power of the ultrasonic waves is 200W. The frequency of the ultrasonic wave is 23kHz, and the cleaning time is 4 minutes; then the Si substrate is placed in absolute ethanol and cleaned with ultrasonic waves, the power of the ultrasonic waves is 200W, the frequency of the ultrasonic waves is 23kHz, and the cleaning time is 4 minutes, and a cleaned Si substrate is obtained. substrate.

[0033] Step 2, depositing Nb x W 1-x o 2 film. Deposition of Nb on Si Substrate by Radio Fr...

Embodiment 3

[0037] This embodiment is a p-type conductive film Nb x W 1-x S 2 , Nb x W 1-x S 2 The thickness of the film was 20 nm, and the doping amount x of Nb was 0.4.

[0038] The concrete preparation process of this embodiment is:

[0039] Step 1, cleaning the Si substrate. The cleaning process conditions are as follows: first soak the Si substrate in 14% hydrofluoric acid solution for 3 minutes to remove the surface oxide film; then put the Si substrate in deionized water and clean it with ultrasonic waves, the power of the ultrasonic wave is 300W, The frequency of the ultrasonic wave is 20 kHz, and the cleaning time is 2 minutes; then the Si substrate is placed in absolute ethanol and cleaned by ultrasonic waves, the power of the ultrasonic waves is 300 W, the frequency of the ultrasonic waves is 20 kHz, and the cleaning time is 2 minutes, and a cleaned Si substrate is obtained. substrate.

[0040] Step 2, depositing Nb x W 1-x o 2 film. Deposition of Nb on Si Substrate...

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Abstract

The invention relates to a p type conductive film Nb<x>W<1-x>S<2> and a preparation method thereof. WS2 is doped with Nb, and a p type semiconductor is formed by acceptor doping. Nb is doped into WS2 to reduce the band gap value of WS2 properly, and can improve the electron mobility. The p tyoe conductive film Nb<x>W<1-x>S<2> can be formed by doping Nb into WS2, the internal stress of the film is relatively low, and higher Hall mobility can be obtained. A Nb<x>W<1-x>O<2>film is deposited on a Si substrate in an RF magnetron sputtering method, and then vulcanized to generate the Nb<x>W<1-x>S<2> film, and in situ annealing is carried out. The p type conductive film Nb<x>W<1-x>S<2> is lower in the inner structures, higher in the Hall mobility, and can serve as channel material of a p type field effect transistor.

Description

technical field [0001] The invention belongs to the field of material science, in particular to a p-type conductive thin film Nb x W 1-x S 2 and preparation method. Background technique [0002] In recent years, the application and development of microelectronics technology in aviation, aerospace, communication, network technology, computer and other fields has become increasingly rapid. At present, microelectronics technology has become the basis for the development of the information age. Integrated circuits are at the heart of microelectronics technology. Over the years, the integration level of integrated circuits has been increasing following Moore's law, and the feature size of metal-oxide-semiconductor field-effect transistors (MOSFETs) has become smaller and smaller. Various microscopic physical effects have emerged one after another, such as serious degradation of inversion channel mobility, poor intrinsic mobility of the Si channel active layer, resulting in a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/24H01L21/02
CPCH01L21/02381H01L21/02568H01L21/02631H01L21/02664H01L29/24
Inventor 冯丽萍李大鹏杜志楠张晓东张兴元刘正堂
Owner NORTHWESTERN POLYTECHNICAL UNIV
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