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A kind of preparation method of front electrode of thin-film solar cell

A technology for solar cells and front electrodes, applied in the field of materials science, can solve the problems of poor uniformity, uncontrollable triangular sheet morphology, poor absorption of visible light and infrared light, etc., so as to improve the uniformity and controllability, Highlight the substantive features and the effect of optimizing optical and electrical properties

Inactive Publication Date: 2017-05-10
李嘉诚
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  • Description
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Problems solved by technology

[0005] Aiming at the above-mentioned technical problems in the prior art, the present invention provides a method for preparing a front electrode of a thin film solar cell, and the method for preparing a front electrode of a thin film solar cell solves the problems of the front electrode of a thin film solar cell The technical problems of uncontrollable shape, poor uniformity, and poor absorption of visible light and infrared light

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  • A kind of preparation method of front electrode of thin-film solar cell
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Embodiment 1

[0025] A method for preparing a front electrode of a thin-film solar cell, comprising the following steps:

[0026] a. A step for preparing the AZO layer: using radio frequency magnetron sputtering equipment, under the sputtering power condition of 100w, under the atmosphere of argon gas of 10sccm, sputtering for 14min, the specific steps are as follows:

[0027] 1) Cut a common glass slide into a size of 1cm×1cm, ultrasonically clean the surface of the sample with acetone, ethanol and deionized water respectively, and then dry it with nitrogen;

[0028] 2) Open the magnetron sputtering chamber, install the target, and put the glass slide;

[0029] 3) Vacuum so that it reaches 2×10 -4 About Pa;

[0030] 4) Through argon, the flow rate of argon is 10sccm;

[0031] 5) Turn on the RF sputtering switch and adjust the sputtering power of 100w;

[0032] 6) Perform sputtering, and the sputtering time is 14 minutes.

[0033] b. A step for preparing an aqueous solution of silver n...

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Abstract

The invention discloses a fabrication method of a thin-film solar cell front electrode. The method comprises the following steps: by a radio-frequency magnetron sputtering method, growing a first aluminum-doped zinc oxide (AZO) thin film on a glass slide; adding low-molecule alcohol to a reaction container, and then adding a silver nitrate solution and a mixed solution of an end-capping reagent and bromide to the reaction container; carrying out heating reflux reaction, centrifuging and washing the mixed solution and dissolving the mixed solution into water to obtain a silver nanorod water solution; dissolving the obtained silver nanorod water solution into the water solution, adding an oxidant to react with the end-capping reagent, and after a period of time, adding a reducing agent to obtain a silver nano triangular sheet; dissolving the silver nano triangular sheet into an isopropyl alcohol solution, and spinning the solution on the surface of the AZO thin film to obtain a composite layer sample with an AZO thin film layer and a silver nano triangular thin film layer; and growing a second AZO thin film on the composite layer sample to obtain the thin-film solar cell front electrode by a radio-frequency magnetron sputtering method. The thin-film solar cell front electrode has relatively good infrared absorption characteristics.

Description

technical field [0001] The invention belongs to the field of materials science and relates to a thin-film solar cell, in particular to a method for preparing a transparent conductive film, specifically a method for preparing a front electrode of a thin-film solar cell. Background technique [0002] At present, transparent film materials with good conductivity and light transmittance include ITO (tin-doped indium oxide) transparent conductive film and FTO (fluorine-doped tin oxide) transparent conductive film, which have good light transmittance in the visible light wavelength range. . However, they also have their own defects. The preparation cost of ITO is high; the substrate size is small; it is toxic; and the resistivity increases rapidly at high temperature. FTO has the disadvantages of large resistance and low pass rate. [0003] Amorphous silicon solar cells have low absorption efficiency in the visible and infrared bands of sunlight, while Ag nanoparticles have poor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/022425H01L31/18Y02E10/50Y02P70/50
Inventor 金晶李嘉诚赵一凝颜家美刘灿惠朝先史伟民
Owner 李嘉诚
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