RSD-based pulse power supply module

Abstract

The invention discloses an RSD-based pulse power supply module. The module comprises a main capacitor, a magnetic switch, an RSD, a charging power supply, a switch pipe, a pre-charge capacitor, a pre-charge inductor and a control module and is characterized in that the main capacitor, the magnetic switch, the RSD, the charging power supply, the switch pipe, the pre-charge capacitor and the pre-charge inductor are integrated in one PCB; and the RSD is fixed on the PCB by a surrounded copper foil. By integrating the RSD power switch, the charging power supply, the capacitor and the magnetic switch in the PCB, all elements work cooperatively and length of a wire is reduced, so stray parameters like parasitic inductance of the power supply is reduced; the rate of rise di / dt of on-state current of the RSD is increased; in addition, the surrounded copper foil is used for welding and fixing the RSD, thereby facilitating acceleration of heat radiation of the RSD and increasing of current channels on the PCB; and copper foil is capable of equally distributing current trends, so current carrying capacity of the pulse power supply module is improved.

Description

technical field [0001] The invention belongs to the technical field of high-power and high-density pulses, and more particularly relates to an RSD-based pulse power supply module. Background technique [0002] High-power pulse power supply (megawatt-level power supply) is to quickly compress, convert or directly release the stored high-density energy to the load. It is widely used in controlled thermonuclear fusion, high-pressure dust removal, organic wastewater treatment and other fields; existing The pulse power supply technology in the technology uses the capacitor energy storage discharge method, and most of them use mechanical spark gaps or non-contact ion devices such as hydrogen thyratrons as discharge switches. During the switch-on process, the switch must withstand a large on-state current rise rate di / dt. Driven by the fields of national defense and economy, the increase of the on-state current rise rate di / dt of the switch will approach the working limit of the s...

AI Technical Summary

Problems solved by technology

Under the impetus of national defense, economic and other fields, the increase of the on-state current rise rate di / dt of the switch will approach the working limit of the switch, and the performance of the switch greatly limits the progress in this field

[0003] In recent years, semiconductor switches such as reverse switching transistors (RSD), pulse thyristors, and insulated gate bipolar transistors (IGBTs) have gradually entered the field of pulse power; spark gap switches have high withstand voltage and large flow, but short service life; Bipolar transistors can withstand high-speed switching, high withstand voltage, and strong current. They are important semiconductor devices in the field of power electronics, but they are relatively expensive; thyristors can withstand high voltage and high current, but the switching speed is slow

[0004] RSD is a new generation of high-power pulse device, with good working stability and trigger dispersion, high voltage and high current resistance, and long service life; but in the existing technology, discrete devices are connected through wires or copper bars to form a pulse system, forming RSD Switches, circuit stray parameters are large, and the on-state current rise rate di / dt of RSD is far lower than the limit of its on-state current rise rate di / dt tolerance (100kA / μs)

Images