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A kind of nano mesoporous silicon carbide hollow sphere with high specific surface area and preparation method thereof

A mesoporous silicon carbide, high specific surface area technology, applied in nanotechnology for materials and surface science, chemical instruments and methods, carbon compounds, etc., can solve the problem that the SiC hollow sphere structure cannot guarantee the integrity, and the synthesis process is complicated. problems such as temperature, inability to mass production, etc., to achieve the effect of high integrity, low cost, and prevention of agglomeration

Inactive Publication Date: 2018-03-16
湖北朗驰新型材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional methods such as carbothermal reduction reaction, self-propagating high-temperature synthesis, and polymer thermal decomposition have great limitations in the preparation of hollow-structure SiC. The synthesis process is quite complicated and the synthesis temperature is above 1300 °C or even 2000 °C, and the energy consumption is relatively high. Large, high cost, unable to mass-produce, and more importantly, the integrity of the synthesized SiC hollow sphere structure cannot be guaranteed [Vix-Guterlc, Alix I, Gibot P.etal.Appl Surf Sci[J],2003,210:329- 337]

Method used

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  • A kind of nano mesoporous silicon carbide hollow sphere with high specific surface area and preparation method thereof
  • A kind of nano mesoporous silicon carbide hollow sphere with high specific surface area and preparation method thereof
  • A kind of nano mesoporous silicon carbide hollow sphere with high specific surface area and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] (1) Add 30ml C 2 h 5 OH in 100ml distilled water, add 0.1g CTAB as a pore-forming agent, stir in a water bath at 35°C for 30min; then add 2ml of NH to the above solution 3 ·H 2 O continue to stir rapidly; then add 1ml of TEOS drop by drop, and stir vigorously at 35°C for 24h; 2 h 5 OH and distilled water were washed three times.

[0032] (2) Disperse the washed white sample in 160ml distilled water, place the dispersed solution in a constant temperature water tank and keep it warm at 20°C for 6 hours to prepare nano-SiO with uniform structure 2 hollow ball.

[0033] (3) by wet chemical method on SiO 2 The surface of the inner shell of the nano hollow sphere is coated with a layer of organic matter and the organic matter is embedded in the shell wall. The specific steps are: put 0.1g of SiO 2 The hollow spheres were ultrasonically dispersed in 100ml distilled water, 0.1g triblock copolymer was added, followed by 0.2g Tris, stirred vigorously to clarify the solutio...

Embodiment 2

[0036] (1) First mix 50ml C 2 h 5 OH in 250ml of distilled water, add 0.5g CTAB as a pore-forming agent, stir in a water bath at 35°C for 30min; then add 3ml of NH to the above solution 3 ·H 2 O continue to stir rapidly; then add 2ml of TEOS drop by drop, and stir vigorously at 35°C for 24h; 2 h 5 OH and distilled water were washed three times.

[0037] (2) Disperse the washed white sample in 160ml distilled water, put the dispersed solution in a constant temperature water tank and keep it warm at 25°C for 12 hours to prepare nano-SiO with uniform structure 2 hollow ball.

[0038] (3) by wet chemical method on SiO 2 The surface of the inner shell of the nano hollow sphere is coated with a layer of organic matter and the organic matter is embedded in the shell wall. The specific steps are: put 0.5g of SiO 2 The hollow spheres were ultrasonically dispersed in 200ml distilled water, 0.25g triblock copolymer was added, followed by 0.5g Tris, stirred vigorously to clarify th...

Embodiment 3

[0041] (1) Add 20ml C 2 h 5 OH in 250ml distilled water, add 1g CTAB as a pore-forming agent, stir in a water bath at 35°C for 30min; then add 4ml of NH to the above solution 3 ·H 2 O continue to stir rapidly; then add 3ml of TEOS dropwise, and stir vigorously at 35°C for 24h; 2 h 5 OH and distilled water were washed three times.

[0042] (2) Disperse the washed white sample in 450ml distilled water, put the dispersed solution in a constant temperature water tank and keep it warm at 30°C for 18 hours to prepare nano-SiO with uniform structure 2 hollow ball.

[0043] (3) by wet chemical method on SiO 2 The surface of the inner shell of the nano hollow sphere is coated with a layer of organic matter and the organic matter is embedded in the shell wall. The specific steps are: put 1g of SiO 2 Ultrasonic disperse the hollow spheres in 250ml distilled water, add 2g triblock copolymer, then add 2g Tris, stir vigorously to clarify the solution, add 0.5g DA, continue vigorous s...

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Abstract

The invention specifically relates to a nano mesoporous silicon carbide hollow sphere with high specific surface area and a preparation method thereof. The technical solution is: adding different amounts of silicon dioxide precursor tetraethyl orthosilicate dropwise into mixed solutions of water and absolute ethanol in different proportions to hydrolyze it into silicon dioxide solid nanospheres of different diameters, The synthesized silica solid spheres are dispersed in different volumes of distilled water and kept warm for a certain period of time to prepare nanometer mesoporous silica hollow spheres with different diameters. Then, wrap the inner shell of the silica hollow sphere with a layer of organic matter and make the organic matter embedded in the shell wall, carbonize, mix the reaction product with magnesium powder and metal salt, and keep warm for several hours under an inert atmosphere to obtain a uniform structure and adjustable size. Nano-mesoporous silicon carbide hollow spheres. The invention has low reaction temperature, low cost control, and the obtained hollow silicon carbide has the advantages of uniform structure, adjustable size, super high specific surface area (648m2 / g), excellent mesoporous structure and the like.

Description

technical field [0001] The invention belongs to the technical field of nano functional materials. Specifically relates to a high specific surface area nano mesoporous silicon carbide hollow sphere and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) material has excellent properties such as high temperature resistance, acid and alkali corrosion resistance and high mechanical strength, and has a high band gap, high critical breakdown electric field and high thermal conductivity, small dielectric constant And high electron saturation mobility, so it has excellent mechanical, chemical, thermal, electrical properties, and has the characteristics of radiation resistance, radioactivity, and wave absorption. It is an important nuclear reactor neutron radiation resistant material and wave absorbing stealth Materials and high-performance structural ceramic materials, which are also ideal materials for electronic and optoelectronic devices, are genera...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/977B82Y40/00B82Y30/00
Inventor 霍开富高标安威力付继江曾宪刚魏哲彭祥
Owner 湖北朗驰新型材料有限公司
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