High-polarization-intensity bismuth ferrite thick film material system and medium and low temperature preparation method

A polarization, bismuth ferrite technology, applied in the manufacture/assembly of semiconductor devices, piezoelectric/electrostrictive devices, electrical components, etc., can solve the problem of low withstand voltage, low polarization strength of bismuth ferrite materials, Easy leakage and other problems, to achieve the effect of low leakage, low cost and avoiding oxygen vacancies

Active Publication Date: 2016-02-17
欧阳俊
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the problems of low polarization strength, easy leakage and low withstand voltage value of the prepared...

Method used

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  • High-polarization-intensity bismuth ferrite thick film material system and medium and low temperature preparation method
  • High-polarization-intensity bismuth ferrite thick film material system and medium and low temperature preparation method
  • High-polarization-intensity bismuth ferrite thick film material system and medium and low temperature preparation method

Examples

Experimental program
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Embodiment 1

[0039] A method for preparing a bismuth ferrite thick film material with high polarization strength at medium and low temperatures, comprising the following steps:

[0040] (1) Treatment of the substrate

[0041] Cleaning and installation: using semiconductor silicon single crystal as the substrate, the substrate is ultrasonically cleaned with acetone and absolute ethanol in sequence, then rinsed with deionized water, dried with high-purity nitrogen, placed in the sample holder, and then the sample The holder is fixed on the sample holder in the vacuum chamber;

[0042] Vacuuming: Close the equipment chamber, pump the chamber with a mechanical pump to achieve a low vacuum, and then pump it with a molecular pump until the chamber pressure is 2×10 -4 Pa;

[0043] Heating: Introduce argon gas into the chamber, adjust the flow rate of argon gas to 39 sccm, and adjust the chamber pressure to 2.5 Pa at the same time, then heat the substrate to raise its temperature to 500°C.

[0...

Embodiment 2

[0051] The difference between this embodiment and Example 1 is that the substrate is heated to 450° C. in step (1), and other steps and parameters are the same as those in Example 1.

Embodiment 3

[0053] The difference between this embodiment and Example 1 is that in step (1), the substrate is heated to 475° C., and other steps and parameters are the same as in Example 1.

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Abstract

The invention provides a high-polarization-intensity bismuth ferrite thick film material system and a medium and low temperature preparation method. The high-polarization-intensity bismuth ferrite thick film material system comprises a base body, a buffer layer, a bottom electrode, a bismuth ferrite dielectric layer and a top electrode. Semiconductor monocrystalline acts as the base body, the buffer layer acts as a metal or metal oxide thin layer, and the bottom electrode acts as an inert metal thin layer. According to the preparation technology, crystallization temperature of the material system is relatively low (<=500 DEG C) so that application of a large-area silicon integrated circuit is facilitated; and volatilization of elements in the material system is greatly reduced by low crystallization temperature so that generation of the defect of oxygen vacancy of the material can be avoided and film material with excellent performance can be acquired, saturation polarization intensity can be 130muC/cm2, and external voltage which can be withstood is not less than 200V. The technological process and equipment operation are easy, the used raw material is sold on the market, cost is relatively low and device integration is easy so that the method is suitable for industrial popularization and production.

Description

technical field [0001] The invention belongs to the technical field of electronic material development and thick film material preparation, and in particular relates to a high polarization strength bismuth ferrite thick film material system and a medium-low temperature preparation method. Background technique [0002] In recent years, ferroelectric ceramics and their thin film materials have been widely used in the fields of microelectronics and optoelectronics, especially in high-capacity memories and micro-electromechanical systems, due to their excellent dielectric, ferroelectric, piezoelectric, electro-optic and nonlinear optical properties. application prospects. However, there are still some problems in its material selection and preparation methods: as (1) lead-based thin film materials are still dominant in industrial production and application fields, and the toxicity of lead has brought serious harm to the environment and human health. Huge challenge; (2) In the m...

Claims

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Application Information

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IPC IPC(8): H01L41/187H01L41/39H01L33/44
CPCH01L33/44H10N30/8561H10N30/093
Inventor 欧阳俊朱汉飞刘梦琳
Owner 欧阳俊
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