A reflective antenna based on artificial microstructure combined with transistors in the terahertz band
A technology of artificial microstructure and reflective antenna, which is applied in the direction of antenna grounding switch structure connection, antenna, antenna array, etc., can solve the problems of multiple unit layers, complex structure, difficult to realize, etc., and achieve mature technology, high-speed switching characteristics, and easy production Effect
Active Publication Date: 2017-11-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
[0007] Hirokazu Kamoda et al. used the pin junction diode-loaded patch antenna to realize electronically controlled scanning at 60Ghz [1]. The structural unit has many unit layers and complex structure. The existing technology is difficult to realize in the terahertz frequency band, and in the The response rate of the pin junction diode is slow, and it is difficult to achieve high-speed scanning
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[0023] The invention combines artificial microstructures with transistors to form a reflection unit structure, and forms a composite array reflection surface through two-dimensional plane arrangement, and changes the resonance mode of artificial microstructures by controlling the on-off of transistors to realize high-speed conversion of reflected wave phase shift , so as to control the phase of the terahertz wave and realize beam scanning.
[0024] The schematic diagram of the overall design scheme of the present invention is as figure 1 , including a semiconductor substrate 1 made of sapphire, high-resistance silicon, silicon carbide, etc., a voltage-loaded electrode line 2 , a digital code feed interface 3 , and a modulation unit array 4 . Wherein, the reflective unit array structure 4 , the negative voltage loading electrode 2 , the digital code feed interface 3 and the metal plate 5 are arranged on the semiconductor substrate 1 .
[0025] The reflection unit includes a tr...
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The invention discloses a terahertz band reflective antenna based on an artificial microstructure combined with a transistor, which belongs to the field of antenna technology and electromagnetic functional devices. Design an artificial microstructure reflection array with frequency response to terahertz electromagnetic waves at a specific frequency point, and then use microelectronics processing technology to combine the array structure with transistors, and control the on-off of the transistors through an external voltage. Finally, the change of the scattering characteristics of the unit is realized by electronically changing the structural resonance mode, so as to realize the control of the reflection phase. The mechanism of its phase shift control is specifically that when the transistor is in the cut-off state, the resonant unit structure capacitor sheet presents a strong capacitive effect on the electric field component of the incident terahertz wave, and when the transistor is turned on, a connection is formed between the capacitor sheets, and the original capacitive effect disappears, due to the change of capacitance, the resonance changes, thus changing the reflection phase. It has the advantages of fast scanning speed, simple processing and low cost.
Description
technical field [0001] The invention relates to a unit for a sub-wavelength reflection antenna, specifically a 1-bit reflection array radiation unit and a flat panel reflection array antenna, belonging to the field of antenna technology and electromagnetic functional devices. Background technique [0002] Terahertz (THz) wave is a new type of electromagnetic spectrum that needs to be developed urgently. It usually refers to electromagnetic waves with frequencies ranging from 0.1 THz to 10 THz. This frequency range lies between millimeter waves, infrared, and light, and has many unique electromagnetic properties. Therefore, it has extremely important potential application value in the fields of physics, chemistry, electronic information, imaging, life science, material science, astronomy, atmospheric and environmental monitoring, national security and anti-terrorism, communication and radar. [0003] High frame rate, high resolution 3D imaging radar requires a low-cost, high...
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IPC IPC(8): H01Q1/38H01Q1/50H01Q3/46H01Q21/00
Inventor 张雅鑫曾泓鑫兰峰赵运城杨梓强
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA