Metal etching agent used for etching copper-containing metal layer and preparation method for metal etching agent

A metal etching, copper metal technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of slow etching efficiency, difficult to use effect to meet the needs of users, etc., to improve etching efficiency, excellent flatness , the effect of a good tapered profile

Inactive Publication Date: 2016-03-09
NINGBO DONGSHENG INTEGRATED CIRCUIT ELEMENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to reduce the resistance of metal wiring, it is necessary to use low-resistance metal layers, such as copper-containing metal layers. At present,

Method used

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  • Metal etching agent used for etching copper-containing metal layer and preparation method for metal etching agent

Examples

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Embodiment 1

[0017] A metal etchant for etching copper-containing metal layers, which is composed of the following raw materials in parts by weight: 20 parts of hydrogen peroxide, 1 part of acetic acid, 1 part of nitrilotriacetic acid, 10 parts of sodium carboxymethyl cellulose, boric acid 15 parts, 12 parts of sodium fumarate, 1 part of sodium fluoride, 4 parts of ethylene glycol, 2 parts of benzidine yellow, 6 parts of barium stearate, 8 parts of azobisisobutyronitrile.

[0018] The method for preparing the metal etchant for etching the copper-containing metal layer described in this embodiment includes the following steps:

[0019] 1) Measure acetic acid, sodium carboxymethyl cellulose, boric acid, sodium fumarate, sodium fluoride, ethylene glycol and benzidine yellow, add them to the container, heat to 50°C, stir and mix for 5 minutes to obtain the first mixture liquid;

[0020] 2) Cool the first mixed solution to room temperature naturally, weigh out and add barium stearate, heat to 42°C, s...

Embodiment 2

[0024] A metal etchant for etching copper-containing metal layers, which is composed of the following raw materials in parts by weight: 30 parts of hydrogen peroxide, 5 parts of acetic acid, 3 parts of nitrilotriacetic acid, 15 parts of sodium carboxymethyl cellulose, boric acid 20 parts, 14 parts sodium fumarate, 2 parts sodium fluoride, 10 parts ethylene glycol, 10 parts benzidine yellow, 8 parts barium stearate, 12 parts azobisisobutyronitrile.

[0025] The method for preparing the metal etchant for etching the copper-containing metal layer described in this embodiment includes the following steps:

[0026] 1) Measure acetic acid, sodium carboxymethyl cellulose, boric acid, sodium fumarate, sodium fluoride, ethylene glycol and benzidine yellow, add them to the container, heat to 60°C, stir and mix for 10 minutes to obtain the first mixture liquid;

[0027] 2) Cool the first mixed liquid to room temperature naturally, weigh and add barium stearate, heat to 48°C, stir and mix for 1...

Embodiment 3

[0031] A metal etchant for etching copper-containing metal layers, which is composed of the following raw materials in parts by weight: 25 parts of hydrogen peroxide, 3 parts of acetic acid, 2 parts of nitrilotriacetic acid, 13 parts of sodium carboxymethyl cellulose, boric acid 18 parts, 13 parts of sodium fumarate, 2 parts of sodium fluoride, 6 parts of ethylene glycol, 6 parts of benzidine yellow, 7 parts of barium stearate, 10 parts of azobisisobutyronitrile.

[0032] The method for preparing the metal etchant for etching the copper-containing metal layer described in this embodiment includes the following steps:

[0033] 1) Measure acetic acid, sodium carboxymethylcellulose, boric acid, sodium fumarate, sodium fluoride, ethylene glycol and benzidine yellow, add them to the container, heat to 55°C, stir and mix for 8 minutes to obtain the first mixture liquid;

[0034] 2) Cool the first mixed liquid to room temperature naturally, weigh and add barium stearate, heat to 45°C, stir...

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Abstract

The invention discloses a metal etching agent used for etching a copper-containing metal layer and a preparation method for the metal etching agent. The metal etching agent comprises, by weight, 20-30 parts of hydrogen peroxide, 1-5 parts of acetic acid, 1-3 parts of nitrilotriacetic acid, 10-15 parts of sodium carboxymethyl cellulose, 15-20 parts of boric acid, 12-14 parts of sodium fumarate, 1-2 parts of sodium fluoride, 4-10 parts of ethylene glycol, 2-10 parts of benzidine yellow, 6-8 parts of barium stearate and 8-12 parts of azodiisobutyronitrile. The invention further provides the preparation method for the metal etching agent used for etching the copper-containing metal layer. The etching speed of the metal etching agent is above 132 nm/min, and is far higher than that of common etching liquid, so that the etching efficiency is improved. Under the condition of adding copper powder, the metal etching agent only has the highest temperature of 38.9 DEG C, and therefore the decomposition of the effective component hydrogen peroxide is restrained, and the stability is obviously improved.

Description

Technical field [0001] The invention relates to the technical field of metal etching, in particular to a metal etchant for etching a copper-containing metal layer and a preparation method thereof. Background technique [0002] Etching is a technique that uses chemical reaction or physical impact to remove materials. Etching techniques can be divided into wet etching and dry etching. For example, hydrofluoric acid is used to corrode the partial surface of glass products, and various patterns, patterns, scales, grids, etc. are carved on the surface. The chemical etching process is to coat the surface of the glass that needs to be etched with protective paint or paraffin wax. Then put in an etching solution composed of hydrofluoric acid and a small amount of NH4F, the glass surface layer reacts with hydrofluoric acid, and the generated fluoride is dissolved in the etching solution or deposited on the glass surface. Chemical etching is to immerse the metal parts to be etched in an...

Claims

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Application Information

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IPC IPC(8): C23F1/18H01L21/306
CPCC23F1/18H01L21/30604
Inventor 尹国钦郭永华杨正军吕淑英颜磊张美刚田芳华
Owner NINGBO DONGSHENG INTEGRATED CIRCUIT ELEMENT
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