A lens-shaped patterned sapphire substrate and its preparation method
A technology for patterning sapphire and lens shapes, applied in chemical instruments and methods, separation methods, semi-permeable membrane separation, etc. Overall light extraction efficiency, fewer preparation steps, and faster processing rates
Active Publication Date: 2019-05-03
XI AN JIAOTONG UNIV
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Problems solved by technology
However, the etching rate of dry etching is slow and the etching time is long, especially it is impossible to prepare larger-sized lens shapes.
In addition, due to particle bombardment, the surface of the substrate will cause certain pollution and damage.
Method used
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[0034] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments, and the process of preparing a lens-shaped patterned large-size sapphire substrate by short-pulse laser processing will be described in detail.
[0035] Such as figure 1As shown, the manufacturing process of the present invention to prepare a lens-shaped patterned sapphire substrate specifically includes the following steps:
[0036] Step S101: Cleaning the sapphire with acetone, ethanol and deionized water in sequence and drying it with nitrogen. The details are as follows: select sapphire as a laser processing material, put it into a container containing three liquids of acetone, ethanol and deionized water in turn for ultrasonic cleaning, the ultrasonic power is 60W, and the ultrasonic time of sapphire in the three liquids is 10 minutes respectively. , so that the sapphire is thoroughly cleaned, taken out, and blown dry with compressed nitrogen.
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Abstract
The invention discloses a lens shape graphical sapphire substrate and a preparation method thereof. Photoresist is spin-coated on the surface of sapphire and cured; the surface of the sapphire is scanned point by point by utilizing short-pulse laser so that a lens shape structured array is formed; and the residual photoresist and laser ablation residue on the surface of the sapphire substrate are removed so that the lens shape graphical sapphire substrate is manufactured. High-energy laser is adopted to directly bombard sapphire material and form three-dimensional geometric patterns on the surface of the sapphire material, the size and spacing distance of the lens shape patterns can be adjusted by changing laser processing parameters, the steps of the preparation technology are less, processing efficiency is high and cost is low with no requirement for a mask layer so that the high-quality lens shape patterns with great consistency can be prepared on the large-size sapphire substrate.
Description
technical field [0001] The invention relates to a patterned sapphire substrate as a III-V group epitaxial material growth substrate, in particular to a method for preparing a lens-shaped patterned large-scale sapphire substrate by short-pulse laser processing. Background technique [0002] Gallium Nitride (GaN), as a third-generation semiconductor material, has a wide range of applications in the field of solid-state lighting, especially in high-power light-emitting diodes (LEDs), due to its excellent performance. Currently commonly used in sapphire (Al 2 o 3 ) heteroepitaxial growth of GaN-based LED epitaxial materials on the substrate. GaN epitaxial layers grown along the c-plane of planar sapphire usually have a high dislocation density (10 8 ~10 10 cm -2 ). The poor quality of GaN film formation leads to low internal quantum efficiency of LEDs. On the other hand, the refractive indices of sapphire and GaN are 1.7 and 2.5, respectively, much higher than that of air...
Claims
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IPC IPC(8): H01L33/20H01L33/00B81B1/00B81C1/00
CPCB81B1/002B81C1/00087B81C1/00547H01L33/007H01L33/20
Inventor 李虞锋王帅王佳琪云峰
Owner XI AN JIAOTONG UNIV