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Method for spontaneously growing Au nanometer particles on electro-deposited CdSe film

A nanoparticle and spontaneous growth technology, applied in the field of nanomaterials and electrochemistry, can solve the problems of difficult large-scale industrial production, cumbersome preparation steps, and many solvents used, and achieve easy large-scale promotion, simple preparation process, and thin film adhesion. strong effect

Active Publication Date: 2016-04-20
平邑经济开发区投资发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using chemical waters to spontaneously grow precious metals (Au, Ag, Pd, etc.) is a simple method. Compared with other growth methods, its biggest advantage is that it does not require additional reducing agents. However, other methods have cumbersome preparation steps, use more solvents, and are less efficient. High cost, difficult to mass industrial production

Method used

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  • Method for spontaneously growing Au nanometer particles on electro-deposited CdSe film
  • Method for spontaneously growing Au nanometer particles on electro-deposited CdSe film
  • Method for spontaneously growing Au nanometer particles on electro-deposited CdSe film

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Experimental program
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Effect test

Embodiment 1

[0019] (1) The electrodes were ultrasonically cleaned with analytical pure acetone, analytical pure ethanol and secondary water for 3 minutes respectively, and after drying in the air, the conductive side was measured with a multimeter, and it was used as a base electrode for later use.

[0020] (2) Measure 6 mL of divalent cadmium salt solution with a concentration of 0.05 mol / L in a clean small beaker, and add 1 mL of SeO with a concentration of 0.01 mol / L in six times under magnetic stirring. 2 Aqueous solution to prepare electrodeposited CdSe thin film base solution.

[0021] (3) Construct a three-electrode system in the electrodeposited CdSe thin film base solution prepared in step (2), wherein the base electrode prepared in step (1) is used as a working electrode, Ag / AgCl is used as a reference electrode, and Pt is used as an auxiliary electrode , using cyclic voltammetry for electrodeposition, the scanning range is -1.1~0V, the scanning speed is 0.05V / s, and the number ...

Embodiment 2

[0028] (1) The electrodes were ultrasonically cleaned with analytical pure acetone, analytical pure ethanol and secondary water for 3 minutes respectively, and after drying in the air, the conductive side was measured with a multimeter, and it was used as a base electrode for later use.

[0029] (2) Measure 6mL of divalent cadmium salt solution with a concentration of 0.1mol / L in a clean small beaker, and add 1mL of SeO with a concentration of 0.05mol / L in six times under magnetic stirring. 2 Aqueous solution to prepare electrodeposited CdSe thin film base solution.

[0030] (3) Construct a three-electrode system in the electrodeposited CdSe thin film base solution prepared in step (2), wherein the base electrode prepared in step (1) is used as a working electrode, Ag / AgCl is used as a reference electrode, and Pt is used as an auxiliary electrode , using cyclic voltammetry for electrodeposition, the scanning range is -1.1~0V, the scanning speed is 0.05V / s, and the number of sc...

Embodiment 3

[0036] (1) The electrodes were ultrasonically cleaned with analytical pure acetone, analytical pure ethanol and secondary water for 3 minutes respectively, and after drying in the air, the conductive side was measured with a multimeter, and it was used as a base electrode for later use.

[0037] (2) Measure 6 mL of divalent cadmium salt solution with a concentration of 0.15 mol / L in a clean small beaker, and add 1 mL of SeO with a concentration of 0.1 mol / L in six times under magnetic stirring. 2 Aqueous solution to prepare electrodeposited CdSe thin film base solution.

[0038] (3) Construct a three-electrode system in the electrodeposited CdSe thin film base solution prepared in step (2), wherein the base electrode prepared in step (1) is used as a working electrode, Ag / AgCl is used as a reference electrode, and Pt is used as an auxiliary electrode , using cyclic voltammetry for electrodeposition, the scanning range is -1.1~0V, the scanning speed is 0.05V / s, and the number o...

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Abstract

The invention discloses a method for spontaneously growing Au nanometer particles on an electro-deposited CdSe film. Mixed solution of divalent cadmium salt and selenium dioxide (SeO2) is used; firstly, CdSe is deposited on the surface of an electrode by using an electro-deposition method to form a carrier film; the electrode is dipped in Au nanometer particle growth liquid for growing by 1-3 hours in a constant-temperature water bath boiler; and finally, the electrode is taken out to spontaneously grow the Au nanometer particles. The method is simple in preparation steps; and the deposited composite film is strong in adhesive force, high in efficiency, low in cost and more suitable for large-scale production.

Description

technical field [0001] The invention belongs to the field of nanometer materials and electrochemistry, and in particular relates to a method for spontaneously growing Au nanoparticles on electrodeposited CdSe thin films. Background technique [0002] Cadmium selenide (CdSe) is an n-type semiconductor material with a direct energy gap. Its forbidden band width is about 1.8eV. It is a semiconductor material with relatively stable chemical properties. It has unique photoelectric conversion characteristics and is often used to improve the wide band gap. Semiconductors have attracted much attention in order to improve their ability to absorb visible light and photocatalytic activity in photocatalytic oxidation technology for environmental pollution control and photocatalytic (PEC) water splitting, but it has an obvious shortcoming, photogenerated electrons Combining with holes will make the photocatalytic activity not high, so the activity of the catalyst must be improved, the mo...

Claims

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Application Information

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IPC IPC(8): B22F9/24C23C18/44C25D9/04B82Y40/00
CPCB22F9/24B82Y40/00C23C18/1646C23C18/44C25D9/04
Inventor 潘宏程汤红园陈琳
Owner 平邑经济开发区投资发展有限公司
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