Novel method for modifying GaAs material surface

Abstract

The invention provides a novel method for modifying a GaAs material surface. The method may stably and reliably reduce defects on the GaAs material surface, decreases a possibility of surface oxidation, and simplifies processing steps. The method comprises steps of: (1) placing a GaAs material to be processed in a vacuum chamber, adding inert gas into the vacuum chamber after the vacuum chamber is made vacuum , and forming stable plasma under the effect of a radiofrequency source to perform physical cleaning; (2) making the vacuum chamber vacuum, adding corrosive gas into the vacuum chamber, and forming stable plasma under the effect of the radiofrequency source, and enabling the plasma to react with an oxide layer on the surface of the material so as to chemically clean the surface of the GaAs material for removing the original oxide layer and impurities on the surface of the GaAs material and forming a Ga-enriched material surface; and (3) making the vacuum chamber vacuum, adding nitrogen into the chamber vacuum, and forming the stable plasma under the effect of the radiofrequency source in order to enable the plasma to react with Ga-enriched material surface to generate a GaN material passivation layer.

Description

technical field [0001] The invention relates to a method for modifying the surface of a gallium arsenide material. Background technique [0002] GaAs is a very important III-V semiconductor compound material. Semiconductor devices made of gallium arsenide have the advantages of high temperature and low temperature performance, low noise, and strong radiation resistance. At the same time, the electron mobility of GaAs material at room temperature is 8000 cm 2 / v*s is about six times the electron mobility of Si material at the same temperature, which provides a basis for GaAs materials to make high-frequency electronic devices. In addition, GaAs material is a direct band gap semiconductor material, so it is also an ideal optoelectronic material. [0003] Although GaAs material has many advantages, it also has some problems, which are related to the polarity of GaAs material. For example, the defect density on its surface is much higher than that of Si material, which makes ...

AI Technical Summary

Problems solved by technology

However, these methods have certain disadvantages: Na 2 Na metal ions in S solution are easy to adhere to GaAs surface to form contamination

This method avoids the problems of stability and environmental pollution in wet passivation, but the surface defects introduced in the pretreatment process are relatively large, and the Si film formed is a polycrystalline material, which makes it difficult to control the process accuracy. poor repeatability

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