A kind of copper-coated graphene/copper-based electrical contact material and preparation method thereof
An electrical contact material, copper-plated graphene technology, applied in the direction of metal material coating process, contacts, circuits, etc., can solve the problem of difficulty in obtaining comprehensive performance copper-based contact materials, and reduce the electrical and thermal conductivity of copper contact materials. and other problems to achieve the effect of improving interface wettability, good wear resistance and high wear resistance
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Embodiment 1
[0034] (1) Copper-coated graphene was prepared by depositing metallic copper on the surface of graphene (number of layers 1-10) by DC magnetron sputtering. The copper target with a purity of 99.99% is first ground with fine sandpaper to remove the surface oxide film before installation, then cleaned with acetone, dried, and pre-sputtered for 5 minutes before deposition by DC magnetron sputtering to remove the metal oxide on the target surface substances and other impurities to ensure the purity of the copper film deposited on the subsequent graphene surface. The process parameters of DC magnetron sputtering are: when the vacuum degree reaches 0.1*10 -3 At Pa, argon gas with a purity of 99.99% was introduced, the working pressure was 0.5Pa, the sputtering power was 100W, and the deposition time was 30min.
[0035] (2) The copper-rare earth alloy is made into 200-mesh alloy powder by centrifugal atomization method, the rare earth in the copper-rare earth is lanthanum-rich mixe...
Embodiment 2
[0040] (1) Metal copper is deposited on the surface of graphene (number of layers 1-10) by DC magnetron sputtering to make copper-coated graphene. The copper target with a purity of 99.99% is first ground with fine sandpaper to remove the surface oxide film before installation, then cleaned with acetone, dried, and pre-sputtered for 5 minutes before deposition by DC magnetron sputtering to remove the metal oxide on the target surface substances and other impurities to ensure the purity of the copper film deposited on the subsequent graphene surface. The process parameters of DC magnetron sputtering are: when the vacuum degree reaches 1*10 -3 At Pa, argon gas with a purity of 99.99% was introduced, the working pressure was 1.2Pa, the sputtering power was 150W, and the deposition time was 5min.
[0041] (2) The copper-rare earth alloy is made into 300-mesh alloy powder by ultrasonic atomization. The rare earth in the copper-rare earth is lanthanum-rich mixed rare earth metal, ...
Embodiment 3
[0046] (1) Metal copper is deposited on the surface of graphene (number of layers 1-10) by DC magnetron sputtering to make copper-coated graphene. The copper target with a purity of 99.99% is first ground with fine sandpaper to remove the surface oxide film before installation, then cleaned with acetone, dried, and pre-sputtered for 5 minutes before deposition by DC magnetron sputtering to remove the metal oxide on the target surface substances and other impurities to ensure the purity of the copper film deposited on the subsequent graphene surface. The process parameters of DC magnetron sputtering are: when the vacuum degree reaches 0.3*10 -3 At Pa, argon gas with a purity of 99.99% was introduced, the working pressure was 0.8Pa, the sputtering power was 120W, and the deposition time was 15min.
[0047] (2) The copper-rare earth alloy is made into 200-mesh alloy powder by gas atomization method, the rare earth in the copper-rare earth is lanthanum-rich mixed rare earth meta...
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