Microscopic imaging device and method for measuring microstructure defects on surface of semiconductor material

Abstract

The invention discloses a microscopic imaging device and method for measuring microstructure defects on a surface of a semiconductor material. The testing device comprises a light source, a polarization modulation reflection difference system, a beam splitter prism, a scanning platform, a co-focusing microscopic system and a signal acquisition system. According to a photo-elastic effect principle and a crystal defect theory, although the microstructure defects on the surface of the semiconductor material have very small sizes, a very large strain distribution field relative to the microstructure defects is formed around the microstructure defects and the strain distribution field can generate an optical reflection anisotropic signal; the testing method can be used for measuring the optical reflection anisotropic signal of each measuring point around the microstructure defects so that an optical reflection anisotropic microscopic imaging pattern, which is close to the microstructure defects, related with the strain field and changed along with a space position, can be directly obtained, and furthermore, information including varieties, density, strain distribution and the like of the defects is obtained. With regard to characterization of the microstructure defects of the material, the microscopic imaging device and method, disclosed by the invention, have the advantages of simplicity and efficiency for operation, no damages, strong portability and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor material testing, in particular to a microscopic imaging device and method for measuring surface microstructure defects of semiconductor materials. Background technique [0002] The third-generation semiconductor materials represented by gallium nitride (GaN), silicon carbide (SiC) and zinc oxide (ZnO) have large band gap, high breakdown electric field, high thermal conductivity, high electron saturation rate and anti- The advantages of strong radiation ability are more suitable for the production of high-temperature, high-frequency, radiation-resistant and high-power devices. It is also the "core" of solid-state light sources and power electronic microwave radio frequency devices, and is becoming a new strategic highland for the global semiconductor industry. [0003] In the past 20 years, crystal growth scientists in various countries have been working hard to grow large-size, high-quality...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a microscopic imaging device and method for measuring microstructural defects on the surface of semiconductor materials, so as to solve the problem of large measurement errors in the current characterization methods for microstructural defects in materials, the inability to directly characterize the microstructural defects of materials, and the complicated testing process And the cost of testing is expensive, so as to achieve the purpose of no damage to the material, convenient and efficient, and simple operation.

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