Ni(OH)2/NiO nanoparticle-based fabrication method for graphene nanowall supercapacitor electrode
A graphene nano-wall and supercapacitor technology, applied in hybrid capacitor electrodes, hybrid/electric double-layer capacitor manufacturing, etc., can solve the problems of limited surface area improvement, poor graphene wall structure, and small effective surface area, so as to facilitate adsorption , Improve the effect of infiltration and dispersion
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Embodiment 1
[0041] One of the above is based on Ni(OH) 2 The graphene nano-wall supercapacitor electrode of / NiO nanoparticles can be prepared by the following method:
[0042] 1. Use copper sheets as current collectors, use plasma enhanced chemical vapor deposition (PECVD), and use CH 4 Gas plasma is used as a precursor, the copper sheet is heated to 650 degrees Celsius in a PECVD reactor, and graphene nanowalls are grown on the copper sheet by plasma-enhanced chemical vapor deposition (PECVD), and the growth time is controlled at 5 minutes, which can be obtained Graphene nanowalls with a height of 0.5 microns;
[0043] 2. Dissolve 1g of glacial acetic acid, citric acid, and tartaric acid in water and ethanol, use concentrated hydrochloric acid to adjust the pH value to 3, and use NiCl 2 , as a precursor, dissolved in the solution prepared above. 0.5g of NiCl 2 Add to the solution, stir well at 60 degrees Celsius to make NiCl 2 hydrolysis. Get 0.1 / L NiCl 2 Hydrolyzed solution; in ...
Embodiment 2
[0048] Embodiment 1 of the present invention is based on Ni(OH) 2 The graphene nano-wall supercapacitor electrode of / NiO nanoparticles can be prepared by the following method:
[0049] 1. Use metal nickel as the current collector, use plasma enhanced chemical vapor deposition (PECVD), and use CH 4 The plasma of the gas is used as the precursor, and the copper sheet is heated to 800 in the PECVD reactor as the current collector, and the plasma enhanced chemical vapor deposition (PECVD) is used to form the CH 4 Gas plasma is used as a precursor, the copper sheet is heated to 800 degrees Celsius in a PECVD reactor, and graphene nanowalls are grown on the copper sheet by plasma-enhanced chemical vapor deposition (PECVD), and the growth time is controlled at 240 minutes, which can be obtained Graphene nanowalls with a height of 5 microns;
[0050] 2. Dissolve 10g of glacial acetic acid, citric acid, and tartaric acid in water and ethanol, and use concentrated hydrochloric acid t...
Embodiment 3
[0055] Embodiment 1 of the present invention is based on Ni(OH) 2 The graphene nano-wall supercapacitor electrode of / NiO nanoparticles can be prepared by the following method:
[0056] 1. Use silicon wafers as current collectors, use plasma enhanced chemical vapor deposition (PECVD), use plasma of CH4 gas as a precursor, heat copper sheets to 1000 in a PECVD reactor as current collectors, and use plasma enhancement chemical vapor deposition (PECVD), with CH 4 Gas plasma is used as a precursor, the copper sheet is heated to 1000 degrees Celsius in a PECVD reactor, and graphene nanowalls are grown on the copper sheet by plasma-enhanced chemical vapor deposition (PECVD), and the growth time is controlled at 120 minutes, which can be obtained Graphene nanowalls with a height of 3 microns;
[0057] 2. Dissolve 5g of glacial acetic acid, citric acid, and tartaric acid in water and ethanol, and adjust the pH value to 4 with concentrated hydrochloric acid. NiCl 2 , as a precursor...
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