An ultraviolet light-emitting diode with p-region structure

A technology for light-emitting diodes and structural electronics, which is applied in the fields of nanotechnology, electrical components, nanotechnology, etc. for materials and surface science, and can solve the problem of preparing ultraviolet light-emitting diodes without a p-type ZnMgNiO layer structure, and electrons overflowing into the active area. And the problems of low hole injection efficiency and efficiency decay, etc., to achieve high lateral carrier mobility, improve recombination efficiency, and reduce separation effects
CN106098880BActive Publication Date: 2018-08-07ε­™ζœˆι™
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
ε­™ζœˆι™
Publication Date
2018-08-07

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Abstract

The invention relates to the technical field of semiconductor photoelectronic devices, in particular to a novel ultraviolet light-emitting diode (UV-LED) of a p-area structure. The novel UV-LED comprise a diode body, wherein the diode body is provided with a sapphire substrate, an AlN nucleating layer, an undoped u-type AlGaN buffer layer, an n-type AlGaN layer, an Alx1Ga1-x1N / Alx2Ga1-x-2N quantum well active area, a p-type Zny1Mg1-y1O / Alx3Ga1-x3N superlattice structure electron blocking layer, a p-type Zny2Mgy3Ni1-y2-y3O layer and an indium tin oxide transparent conducting layer from bottom to top in sequence, wherein a p-type ohmic electrode is led out on the indium tin oxide transparent conducting layer; and an n-type ohmic electrode is led out on the n-type AlGaN layer. According to the novel UV-LED of the p-area structure, a p-type Zny1Mg1-y1O / Alx3Ga1-x3N superlattice structure has a strong quantum restriction effect on carriers, and electrons can be inhibited from flowing out of the active area effectively; through the p-type Zny2Mgy3Ni1-y2-y3O layer, the composite efficiency of the carriers in the active area is improved; sapphire on an r surface, an m surface or an a surface is used as a substrate material, and a nonpolar or semi-polar AlGaN material can be obtained, so that separation of electrons with a hole wave function in space is reduced, and the radiation composite efficiency of the carriers is improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to an ultraviolet light-emitting diode with a p-region structure. Background technique

[0002] The ultraviolet light ranges from 100 to 400nm. Compared with the visible light band, ultraviolet photons have higher energy, stronger penetrating ability, and strong lethality to biological viruses. Due to these properties, ultraviolet light sources have great application value in the fields of biochemical harmful substance detection, water purification, high-density storage, short-wavelength safe communication, and military affairs. For ultraviolet devices, AlGaN material has its inherent advantages. By selecting the Al component in the ternary compound, the AlGaN band gap energy can be adjusted from 6.2eV to 3.4eV, corresponding to the light wavelength range from 200nm to 365nm.

[0003] However, compared with GaN-based blue LEDs, the luminous efficiency o...

Claims

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