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Novel graphic substrate structure and device

A patterned substrate and patterned technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of complex silicon substrate peeling technology, low luminous efficiency of LED devices, and low yield, etc., to improve surface light output. and external quantum efficiency, reducing dislocation density, reducing the effect of defect density

Inactive Publication Date: 2016-11-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the dislocation density of heteroepitaxial GaN LED materials on silicon substrates is 1-2 orders of magnitude higher than that of GaN materials on sapphire, and cracks caused by tensile stress are easy to form; and silicon substrates have a strong absorption of blue light, so The grown LED epitaxial structure needs to be peeled off from the silicon substrate, otherwise the luminous efficiency of the LED device is very low
It is worth noting that the current technology of heteroepitaxial GaN materials on silicon substrates is not yet mature, and the silicon substrate lift-off technology has disadvantages such as complicated process and low yield.

Method used

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  • Novel graphic substrate structure and device
  • Novel graphic substrate structure and device

Examples

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no. 1 example

[0041] This embodiment specifically describes the patterned substrate of the sapphire-based embedded distributed Bragg reflector structure and the GaN LED device structure provided by the present invention, such as figure 2 shown.

[0042] The structure of the sapphire-based distributed Bragg reflector patterned substrate provided in this embodiment includes: a single crystal sapphire substrate 201, a patterned distributed Bragg reflector (DBR) and a patterned medium layer 202; the patterned DBR is formed On a single crystal sapphire substrate 201, a patterned dielectric layer is formed on a patterned DBR; the DBR structure consists of 6 groups of TiO 2 / Al 2 o 3 It is alternately stacked according to the ABAB method, and each layer of TiO 2 with Al 2 o 3 The thickness conforms to the quarter-wavelength extinction rule, and the preferred thicknesses are 49 nanometers and 67 nanometers respectively; the patterned dielectric layer is made of Al 2 o 3 The material is comp...

no. 2 example

[0046] This embodiment specifically describes the schematic diagram of the patterned substrate of the silicon-based embedded DBR structure provided by the present invention and the structure of the vertical GaN LED device, as shown in image 3 shown.

[0047] The structure of the silicon-based embedded distributed Bragg reflector patterned substrate provided in this embodiment includes: an N-type Si (111) substrate 301, a patterned distributed Bragg reflector (DBR) and a patterned medium layer 302; The DBR is formed on the Si (111) substrate 301, and the patterned dielectric layer is formed on the patterned DBR; the DBR structure consists of 6 groups of TiO 2 / Al 2 o 3 It is alternately stacked according to the ABAB method, and each layer of TiO 2 with Al 2 o 3 The thickness conforms to the quarter-wavelength extinction rule, and the preferred thicknesses are 49 nanometers and 67 nanometers respectively; the patterned dielectric layer is made of Al 2 o 3 The material is...

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Abstract

The invention discloses a graphic substrate structure and an LED device. The graphic substrate structure comprises a substrate body, a graphic distributed Bragg reflector formed on the substrate, and a graphic dielectric layer formed on the graphic distributed Bragg reflector. The graphic distributed Bragg reflector and the graphic dielectric layer formed on the graphic distributed Bragg reflector are processed into a plurality of symmetric periodic protrusions. The graphic substrate structure and the LED device are applied to the technical field of semiconductor photoelectron. Therefore, the growth quality of the epitaxial crystal can be improved and the luminous efficiency is enhanced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and in particular relates to a general patterned substrate and an LED light-emitting device that can be widely used in heterogeneous epitaxy of semiconductor materials. Background technique [0002] LED is a semiconductor solid light-emitting device, made of III-V compounds, such as GaN (gallium nitride), GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors . [0003] At present, GaN-based LED devices mainly use sapphire as the substrate. Due to the difference in lattice constant and thermal expansion coefficient between the sapphire substrate and the GaN LED material, there is a relatively high threading dislocation density (10 8 ~10 10 cm -2 ) and very large compressive stress seriously affect the further improvement of GaN LED optical characteristics. The existence of material defects and internal stress is the ...

Claims

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Application Information

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IPC IPC(8): H01L33/22H01L33/10
CPCH01L33/22H01L33/10
Inventor 刘洪刚常虎东刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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