Porous silicon-nitride-based hole sealing coating and preparation method and application thereof

A silicon nitride-based, silicon nitride technology, applied in the coating, metal material coating process, ion implantation plating, etc., can solve the problems of improving the dielectric constant of the sealing coating, coating damage, failure, etc. Achieve the effect of small sample size limitation, high mechanical strength and high dielectric loss

Active Publication Date: 2016-12-07
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology has the advantages of simplicity and easy expansion, but the difference in thermal expansion coefficient between the coating and the substrate often leads to the coating being prone to damage and failure during heating / cooling, and the presence of oxides increases the dielectric constant of the sealing coating.

Method used

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  • Porous silicon-nitride-based hole sealing coating and preparation method and application thereof
  • Porous silicon-nitride-based hole sealing coating and preparation method and application thereof
  • Porous silicon-nitride-based hole sealing coating and preparation method and application thereof

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preparation example Construction

[0035] In a preferred embodiment, a method for preparing a hydrophobic silicon nitride sealing coating may comprise the following steps:

[0036] (1) Plasma sputtering to clean the substrate, place the porous silicon nitride substrate in the magnetron sputtering vapor deposition system, and use argon plasma for sputtering cleaning, the argon gas flow rate is 80-150 sccm, and the bias voltage is - 300V to 700V, processing time is 10min to 30min;

[0037] (2) Magnetron sputtering deposits a silicon nitride-based sealing coating, the single crystal silicon target is the cathode, the power of the control power supply is 600W to 1200W, the bias voltage is -120V, and the gas injected into the coating chamber is argon or nitrogen. Among them, the flow rate of argon gas is 50-100 sccm, the flow rate of nitrogen gas is 120-180 sccm, and the silicon nitride-based sealing coating is prepared by reactive magnetron sputtering technology; the processing time is 5h to 60h according to the th...

Embodiment 1

[0044] Embodiment 1: The highly transparent silicon nitride-based sealing coating consists of a porous silicon nitride substrate and Si with a thickness of 33.5 μm. 3 N 4 and Si 2 N 2 It is composed of a dense coating of spherical particles of O phase, and the contact angle of the coating is 116.3°.

[0045] The preparation process of the highly transparent silicon nitride coating is carried out according to the following steps: (1) Clean the substrate by plasma sputtering: firstly, put the cleaned porous silicon nitride substrate into the vacuum chamber of the magnetron sputtering equipment , for argon plasma sputtering cleaning, the argon gas flow rate is 120sccm, the bias voltage is -500V, and the processing time is 30min; (2) Magnetron sputtering deposits silicon nitride-based coating: the single crystal silicon target is the cathode, and the vacuum chamber The pressure is 8.0*10 -1 Pa, the working gas is argon and nitrogen, the flow rates are 60sccm and 180sccm respec...

Embodiment 2

[0049] Example 2: The highly transparent silicon nitride-based sealing coating is composed of a porous silicon nitride substrate and a dense coating of SiN phase spherical particles with a thickness of 12 μm, and the contact angle of the coating is 125°.

[0050] The preparation process of the highly transparent silicon nitride coating is carried out according to the following steps: (1) Clean the substrate by plasma sputtering: firstly, put the cleaned porous silicon nitride substrate into the vacuum chamber of the magnetron sputtering equipment , for argon plasma sputtering cleaning, the argon gas flow rate is 120sccm, the bias voltage is -500V, and the processing time is 30min; (2) Magnetron sputtering deposits silicon nitride-based coating: the single crystal silicon target is the cathode, and the vacuum chamber The pressure is 8.0*10 -1 Pa, the working gas is argon and nitrogen, the flow rates are 60sccm and 180sccm respectively, the power of the control DC power supply i...

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Abstract

The invention discloses a porous silicon-nitride-based hole sealing coating and a preparation method and application thereof. In one embodiment, the method comprises: selecting a single crystal silicon target as a cathode, and using a magnetron sputtering deposition technology to prepare a silicon nitride hole sealing coating under the nitrogen atmosphere; then adopting a certain heat treatment process for performing high-temperature sintering; and afterwards, using a hydrophobic modifier for performing hydrophobic treatment so as to obtain the porous silicon-nitride-based hole sealing coating. The binding property of the hole sealing coating with a porous silicon-nitride-based substrate is good, and the hole sealing coating has the advantages of compact structure, controllable thickness, high hardness, low internal stress, no macro defect, high wave permeability, and the like, and can be applied in multiple fields. According to the invention, multiple technologies are combined to prepare the silicon-nitride-based hole sealing coating, and the silicon-nitride-based hole sealing coating with excellent comprehensive performance is obtained, therefore, the effective protection for a porous silicon nitride substrate can be realized.

Description

technical field [0001] The invention relates to a sealing coating of a porous silicon nitride material, in particular to a silicon nitride-based sealing coating with properties such as superhydrophobicity and high wave penetration, and its preparation method and application, belonging to material surface treatment technology field. Background technique [0002] Porous silicon nitride has become one of the research hotspots in the field of thermal wave-transmissive materials because of its low dielectric constant, stable high-frequency dielectric constant and good heat resistance. Porous silicon nitride can be regarded as a complex of silicon nitride and pores, and when the porosity is greater than 50%, it can meet the requirement of low dielectric constant. However, the porous structure of silicon nitride also brings some adverse effects while reducing the dielectric constant. For example, the porous structure significantly reduces the mechanical properties of silicon nitri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58
Inventor 曾志翔刘二勇周军范锦鹏乌学东曹慧军
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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