Thin film transistor, fabrication method and interactive display device
A thin-film transistor and thin-film technology, which is applied in the field of semiconductor devices, can solve the problems of being unable to be used as the core component of its photosensitive unit, low photoresponse sensitivity, and high price, and achieve high solution cost, high photoresponse sensitivity, and reduced production cost Effect
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Embodiment 1
[0061] In this embodiment, it firstly goes through step S110 to select a p+-Si / SiO2 (100) thermally oxidized silicon wafer as the substrate 110, and perform cleaning and drying. At the same time, prepare a clean silicon wafer as a companion piece. Wherein, the p-type heavily doped thermally oxidized silicon wafer can also serve as the substrate 110, the gate electrode layer 120 and the gate dielectric layer 130 at the same time, eliminating the steps of preparing the gate electrode layer 120 and the gate dielectric layer 130, and saving the process. time and craft resources. Moreover, by cleaning and drying the p-type heavily doped thermally oxidized silicon wafer, the cleanliness of the substrate 110 is ensured, and the phenomenon of contaminating the zinc-tin-nitride channel layer 140 prepared subsequently is avoided. Wherein, the gate dielectric layer 130 is p+-Si / SiO 2 (100) thermal oxide layer with a thickness of about 100±30nm.
[0062] Furthermore, through step S120,...
Embodiment 5
[0086] In this embodiment, firstly, through step S210, a p+-Si / SiO2(100) thermally oxidized silicon wafer is selected as the substrate 110, and is cleaned and dried. This step is the same as step S110 in the first embodiment.
[0087] Then, through step S220, the channel mask is fixedly placed on the surface of the gate dielectric layer 130 of the substrate 110 at room temperature, and is closely attached to the surface of the gate dielectric layer 130, and the magnetron sputtering deposition method is used. / SiO2 (100) thermally oxidized the surface of the silicon wafer to deposit a zinc tin oxynitride film as the channel layer 140 . Wherein, when the magnetron sputtering equipment is used for sputtering deposition of the zinc tin oxynitride thin film, the target material used is a metal zinc tin alloy target (the atomic ratio of zinc and tin is 6.0). The working gas is nitrogen gas. The sputtering power was 120W and the gas pressure was 2Pa. The deposition temperature was...
Embodiment 7
[0100] In this embodiment, firstly, through step S310, a p+-Si / SiO2(100) thermally oxidized silicon wafer is selected as the substrate 110, and is cleaned and dried. This step is the same as step S110 in the first embodiment.
[0101] Then, through step S320, the channel mask is fixedly placed on the surface of the gate dielectric layer 130 of the substrate 110 at room temperature, and is closely attached to the surface of the gate dielectric layer 130, and a magnetron sputtering deposition method is used. / SiO2 (100) thermally oxidized the surface of the silicon wafer to deposit a zinc tin oxynitride film as the channel layer 140 . Wherein, when the magnetron sputtering equipment is used for sputtering deposition of the zinc tin oxynitride thin film, the target material used is a metal zinc tin alloy target (the atomic ratio of zinc and tin is 6.0). The working gas is nitrogen gas. The sputtering power was 120W and the gas pressure was 2Pa. The deposition temperature was r...
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Abstract
Description
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