Preparation method of millimeter-scale single-layer single crystal graphene

A single crystal graphene, millimeter-scale technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as reducing electron mobility, thermal conductivity, reducing graphene-related properties and application value , to achieve the effect of simple preparation process and broad application prospects

Inactive Publication Date: 2017-01-04
FUJIAN NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, graphene prepared on copper foil by traditional chemical vapor deposition is a polycrystalline structure with many grain boundaries. These defects will greatly reduce its electron mobility, thermal conductivity and other properties, and greatly reduce the related properties and properties of graphene. Value

Method used

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  • Preparation method of millimeter-scale single-layer single crystal graphene
  • Preparation method of millimeter-scale single-layer single crystal graphene
  • Preparation method of millimeter-scale single-layer single crystal graphene

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Embodiment 1

[0019] A method for preparing millimeter-scale single-layer single-crystal graphene, the specific steps are:

[0020] 1) Cut the copper foil as the growth substrate into a rectangular shape with a size of 2.5cm*2.5cm;

[0021] 2) Put the cut copper foil into dilute hydrochloric acid for ultrasonic cleaning, then transfer it to acetone solution for ultrasonic cleaning, and dry it with nitrogen after cleaning;

[0022] 3) Put the copper foil into the quartz tube of the tube furnace, pass in 300 sccm of Ar and heat up to 1070°C;

[0023] 4) Pass 300sccmAr and 50sccmH at 1070°C 2 And annealed at high temperature for 4 hours;

[0024] 5) After high temperature annealing, 0.5 sccm of CH was introduced at 1070°C 4 and 50sccmH 2 Grow graphene for 2 hours;

[0025] 6) After the growth is over, turn on the tube furnace to cool down the sample rapidly and inject 300sccmAr and 4sccmH 2 , and the samples were taken out after cooling down to room temperature.

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Abstract

The invention belongs to the field of low-dimensional nanomaterials and particularly relates to a preparation method of millimeter-scale single-layer single crystal graphene. The preparation method comprises the following specific steps: firstly, forming low-density copper oxide nanoparticles on the surface of a copper foil after the copper foil is annealed for a long time in the atmosphere of argon by optimizing annealing conditions of the copper foil and applying a chemical vapor deposition (CVD) method; secondly, introducing CH4 and H2, and growing out the millimeter-scale single-layer single crystal graphene by taking the copper oxide nanoparticles as nucleating points. The method is simple in preparation process, is suitable for industrial large-batch production, and has a broad application prospect.

Description

technical field [0001] The invention belongs to the field of low-dimensional nanometer materials, and in particular relates to a preparation method of millimeter-scale single-layer single-crystal graphene. Background technique [0002] Graphene is a carbon atom composed of sp 2 The hybrid orbitals form a hexagonal two-dimensional crystal with a honeycomb lattice, and its excellent properties in terms of force, heat, light, and electricity have attracted the interest of more and more scientific researchers. At present, there are many methods for preparing graphene, such as mechanical exfoliation method, redox method, silicon carbide epitaxial growth method, chemical vapor deposition method and so on. Among these methods, chemical vapor deposition has attracted increasing attention because of its ability to industrially prepare high-quality, large-scale graphene. However, graphene prepared on copper foil by traditional chemical vapor deposition is a polycrystalline structure...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/02
CPCC30B25/00C30B29/02
Inventor 刘金养徐杨阳左传东林丽梅黄志高赖发春
Owner FUJIAN NORMAL UNIV
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