Ion-doped perovskite solar cell and manufacturing method thereof

A technology of solar cells and ion doping, which is applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc. It can solve the problems of large grain size electron transmission obstacles, reduced photoelectric conversion efficiency of batteries, and unstable light output power. Achieve the effect of increasing electron mobility, improving battery efficiency, and high mobility

Active Publication Date: 2017-01-04
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] 1) The small grain size in the perovskite solar cell hinders electron transmission greatly, which reduces the photoelectric conversion efficiency of the cell;
[0010] 2) The hysteresis phenomenon inside the perovskite solar cell leads to unstable light output power, which limits the practical application of this cell

Method used

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  • Ion-doped perovskite solar cell and manufacturing method thereof

Examples

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Embodiment 1

[0027] Example 1, preparing a doping solution of lithium iodide (anhydrous LiI with a purity of 99%) and dimethyl sulfoxide, the concentration of which is 0.4mol / L, for doping the original solution of the perovskite precursor solution, The concentration of doping is 1%. Preferably, the lithium iodide in this embodiment is anhydrous LiI with a purity of 99%.

[0028] First, a layer of dense titanium dioxide film (100 nanometers) is coated on the conductive glass layer by spin coating or spraying by sol-gel method; after treatment at 450°C, titanium tetrachloride treatment is performed on the dense layer of titanium dioxide, and it is sintered for later use. Preferably, the thickness of the dense titanium dioxide film in this embodiment is preferably 100 nanometers.

[0029] Then methyl iodide and lead chloride were dissolved in N,N-dimethylformamide at a molar ratio of 3:1 to 1:1 to prepare a stock solution of perovskite precursor.

[0030] Then lithium iodide was dissolved i...

Embodiment 2

[0035] Example 2, preparing a doping solution of lithium iodide (anhydrous LiI with a purity of 99%) and dimethyl sulfoxide, the concentration of which is 0.4mol / L, for doping the original solution of the perovskite precursor solution, The concentration of doping is 2%. Preferably, the lithium iodide in this embodiment is anhydrous LiI with a purity of 99%.

[0036] First, a layer of dense titanium dioxide film is coated on the conductive glass layer by spin coating or spraying by sol-gel method; after treatment at 450°C, titanium tetrachloride treatment is performed on the dense layer of titanium dioxide, and it is sintered for later use. Preferably, the thickness of the dense titanium dioxide film in this embodiment is preferably 50 nanometers.

[0037] Then methyl iodide and lead chloride were dissolved in N,N-dimethylformamide at a molar ratio of 3:1 to 1:1 to prepare a stock solution of perovskite precursor.

[0038] Then dissolve lithium iodide in dimethyl sulfoxide, a...

Embodiment 3

[0044] Example 3, preparing a doping solution of lithium iodide (anhydrous LiI with a purity of 99%) and dimethyl sulfoxide, the concentration of which is 0.4mol / L, for doping the original solution of the perovskite precursor solution, The concentration of doping is 5%. Lithium iodide in this embodiment is anhydrous LiI with a purity of 99%.

[0045] First, a layer of dense titanium dioxide film is coated on the conductive glass layer by spin coating or spraying by sol-gel method; after treatment at 450°C, titanium tetrachloride treatment is performed on the dense layer of titanium dioxide, and it is sintered for later use. The thickness of the dense titanium dioxide film in this embodiment is preferably 50 nanometers.

[0046] Then methyl iodide and lead chloride were dissolved in N,N-dimethylformamide at a molar ratio of 3:1 to 1:1 to prepare a stock solution of perovskite precursor.

[0047] Then dissolve lithium iodide in dimethyl sulfoxide, and drop the prepared doping ...

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Abstract

The invention relates to an ion-doped perovskite solar cell and a preparation method thereof. The solar cell comprises a conductive glass layer, a compact titanium dioxide membrane, a methylamine lead iodine polycrystalline membrane, a hole-transporting material layer and an evaporation silver electrode layer, wherein the conductive glass layer, the compact titanium dioxide membrane, the methylamine lead iodine polycrystalline membrane, the hole-transporting material layer and the evaporation silver electrode layer are successively distributed, and the ion-doped perovskite solar cell is characterized in that the methylamine lead iodine polycrystalline membrane is doped with lithium iodide. The anhydrous lithium iodide is used for doping a perovskite precursor solution stock solution, the anhydrous lithium iodide is combined with the perovskite precursor solution stock solution, and the anhydrous lithium iodide can play a double efficacy. The manufacturing method is simple and easy to popularize.

Description

technical field [0001] The invention relates to a battery and a manufacturing method thereof, in particular to an ion-doped perovskite solar cell and a manufacturing method thereof. Background technique [0002] Due to its low cost, good performance, and simple preparation, perovskite solar cells have been highly valued by researchers and industries. Perovskite materials have been used in solar cells since 2009, and the efficiency has reached more than 20%, which is 5 times the initial cell efficiency, leaving behind new thin-film solar cells such as dye-sensitized solar cells and organic solar cells. , Perovskite solar cells are low-cost thin-film solar cells that have developed very rapidly in the past three years. [0003] The core of the perovskite solar cell structure is the perovskite crystal form (ABX 3 ) of organometallic halide light-absorbing materials. In this perovskite ABX 3 In the structure, A is methylamino (CH 3 NH 3 ), B is metal lead atom, X is chlori...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/48
CPCH10K71/12H10K85/141Y02E10/549
Inventor 陈人杰张京诸跃进曾昭兵张英庄学恒卢兴伟
Owner NINGBO UNIV
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