Preparation method of silicon-boron doped carbon quantum dots

A technology of carbon quantum dots and silicon boron, which is applied in the field of nanomaterial preparation, can solve the problems of high price and complicated preparation process, and achieve the effect of simple source and simple process

Inactive Publication Date: 2017-01-11
CHANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method for preparing silicon-boron-doped carbon quantum dots in order to overcome the deficiencies in the prior art such as complex preparation process and high price

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] According to the amount of 1.5mmol 4-(trimethylsilyl)sodium phenylborate corresponding to every gram of commercially available magnesium aluminum hydrotalcite, the hydrotalcite passing through a 50 mesh sieve is added to 4-(trimethylsilyl) with a mass percentage concentration of 1%. Silicyl) phenyl borate solution, stirred in a constant temperature water bath at 70°C for 6 hours, aged for 24 hours, separated from solid and liquid, washed the precipitate with deionized water 3 times, and dried to obtain 4-(trimethylsilyl) phenylboronic acid Sodium-modified hydrotalcite; put the obtained hydrotalcite modified by sodium 4-(trimethylsilyl)phenylborate into a vacuum tube furnace, heat to 600°C under vacuum, calcinate in vacuum for 4h, and then cool to Room temperature; add the calcined powder to a hydrochloric acid solution with a concentration of 40% by mass, each gram of powder corresponds to 15 ml of hydrochloric acid solution, stir for 4 hours under the protection of nitr...

Embodiment 2

[0020] According to the amount of 1 mmol 4-(trimethylsilyl) sodium phenylborate corresponding to every gram of commercially available zinc-aluminum hydrotalcite, the hydrotalcite passing through 20 mesh sieves is added to 4-(trimethylsilyl) with a mass percentage concentration of 0.1%. base) sodium phenylborate solution, stirred in a constant temperature water bath at 60°C for 5 hours, aged for 12 hours, separated from solid and liquid, washed the precipitate twice with deionized water, and dried to obtain 4-(trimethylsilyl)sodium phenylborate Modified hydrotalcite; put the obtained 4-(trimethylsilyl)phenylborate modified hydrotalcite into a vacuum tube furnace, heat to 400°C under vacuum, calcinate in vacuum for 2h, and then cool to room temperature ; Add the calcined powder to a hydrochloric acid solution with a concentration of 20% by mass, each gram of powder corresponds to 10 milliliters of hydrochloric acid solution, stir for 3 hours under the protection of nitrogen, wait...

Embodiment 3

[0022] Firstly, the magnesium-aluminum hydrotalcite was synthesized according to the literature (hydrothermal synthesis of magnesium-aluminum hydrotalcite, Applied Chemistry, 2001, 18, 70-72); the hydrotalcite was passed through a 40-mesh sieve for later use.

[0023] According to the amount of 1 mmol 4-(trimethylsilyl) sodium phenylborate per gram of hydrotalcite, the hydrotalcite that crossed 50 mesh sieves was added to 4-(trimethylsilyl) phenylboronic acid with a mass percent concentration of 0.5%. In the sodium solution, stir in a constant temperature water bath at 70°C for 6 hours, age for 24 hours, separate the solid from the liquid, wash the precipitate 3 times with deionized water, and dry to obtain 4-(trimethylsilyl)sodium phenylborate-modified water Talc: Put the hydrotalcite modified by sodium 4-(trimethylsilyl)phenylborate into a vacuum tube furnace, heat to 500°C under vacuum, calcinate in vacuum for 4 hours, and then cool to room temperature; The powder is added ...

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Abstract

The invention discloses a preparation method of silicon-boron doped carbon quantum dots. The preparation method includes following steps: adding hydrotalcite passing a sieve with 20-50 meshes into a trimethylsilyle sodium phenylborate solution of 0.1-1% in mass percent concentration according to a proportion that each gram of hydrotalcite corresponds to 1-1.5mmol of trimethylsilyle sodium phenylborate, stirring in constant-temperature water bath at 60-70 DEG C for 5-6h, aging for 12-24h, performing solid-liquid separation, using deionized water to wash precipitate for 2-3 times, and drying to obtain hydrotalcite modified by 4-trimethylsilyle sodium phenylborate; putting hydrotalcite in a vacuum tubular furnace, heating to 400-600 DEG C in a vacuum condition, vacuum calcining for 2-4h, and cooling to room temperature; adding powder after calcining into a hydrochloric acid solution of 20-40% in mass percent concentration according to a proportion that each gram of the powder corresponds to 10-15ml of the hydrochloric acid solution, stirring for 3-4h under protection of nitrogen, and centrifuging at a high speed after a hydrotalcite sheet layer is completely dissolved to obtain the silicon-boron doped carbon quantum dots. The preparation method is simple in material and mild in condition.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a method for preparing silicon boron doped carbon quantum dots. Background technique [0002] Quantum dots are semiconductor nanostructures that trap excitons in three spatial directions. Such constraints can be attributed to electrostatic potentials (generated by external electrodes, doping, strain, impurities), interfaces of two different semiconductor materials (e.g. in self-assembled quantum dots), semiconductor surfaces (e.g. semiconductor nanocrystals ), or a combination of the above three. Quantum dots have separate quantized energy spectra. The corresponding wave function is spatially located in the quantum dot, but extends over several lattice periods. A quantum dot has a small number (1-100) of an integer number of electrons, holes or electron-hole pairs, that is, the charge it carries is an integer multiple of the elementary charge. [0003] Carbon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/65B82Y30/00C01B32/15
CPCC09K11/65B82Y30/00
Inventor 刘青陈毅忠
Owner CHANGZHOU UNIV
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