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Pd-based variable capacitive hydrogen sensor and preparation method thereof

A variable capacitor and sensor technology, applied in the field of gas sensing, can solve the problems of complex manufacturing process and high cost, and achieve the effect of good selectivity, low cost and stable performance

Active Publication Date: 2017-02-01
SUZHOU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of sensor has high test accuracy and a measurement range of 15ppm to 1%, but the manufacturing process is complicated and the cost is high

Method used

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  • Pd-based variable capacitive hydrogen sensor and preparation method thereof
  • Pd-based variable capacitive hydrogen sensor and preparation method thereof
  • Pd-based variable capacitive hydrogen sensor and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0028] See attached figure 1 , which is a Pd-based variable capacitance hydrogen sensor provided by the present invention. The main components of the sensor include: resistivity between 10 -3 ~10 2 Ω·cm doped single crystal Si substrate 1, SiO grown by thermal oxidation 2 Layer 2, on SiO 2 Fabricate vent slots 3 on the SiO 2 Through-SiO 2 Layer deposition hole 4, Pd-based material 5 deposited in the deposition hole as the movable electrode of the sensor, and conductive flat material 6 as the static electrode of the sensor. Its specific structure is: thermal oxidation growth of SiO on doped single crystal Si substrate 1 2 Layer 2, SiO 2 The thickness of the layer is 0.5-1.5 microns; in SiO 2 through SiO 2 The deposition hole 4 of the layer, the movable electrode Pd-based material 5 is deposited in the deposition hole, and the height of the deposited movable electrode Pd-based material is SiO 2 50% to 90% of the layer thickness; in SiO 2 The upper surface of the layer...

Embodiment 2

[0039] The structure of the Pd-based variable capacitance hydrogen sensor provided in this embodiment is the same as that in Embodiment 1. The method of making the sensor is:

[0040] (1) A 1.5-micron-thick layer of SiO was grown on the surface of a 4-inch doped single-crystal Si wafer with a resistivity of 10 Ω cm by thermal oxidation 2 ;

[0041] (2) SiO grown by thermal oxidation by negative photolithography and hydrofluoric acid wet etching 2 Fabricated on a diameter of 1 cm and through the SiO 2 The deposition hole of the layer makes the conductive Si substrate exposed to the air;

[0042] (3) SiO grown by thermal oxidation using positive resist UV lithography and plasma etching processes 2 Make grid-shaped ventilation grooves with a depth of 0.2 microns;

[0043] (4) Using double-target co-sputtering supplemented by a stainless steel mask, selectively deposit 80%Pd / 20%Ni alloy in the deposition hole as the movable electrode of the sensor, and the height of the Pd-ba...

Embodiment 3

[0048] The structure of the Pd-based variable capacitance hydrogen sensor provided in this embodiment is the same as that in Embodiment 1. The method of making the sensor is:

[0049] (1) The thermal oxidation method is used at a resistivity of 5×10 -2 A layer of SiO with a thickness of 0.5 microns was grown on the surface of a 4-inch doped single-crystal Si substrate of Ω·cm 2 ;

[0050] (2) SiO grown by thermal oxidation using positive resist UV lithography and plasma etching processes 2 Make grid-shaped ventilation grooves with a depth of 0.1 microns;

[0051] (3) SiO grown by thermal oxidation by positive resist UV lithography and plasma etching 2 The upper fabrication diameter is 0.1 mm and runs through the SiO 2 The deposition hole of the layer makes the conductive Si substrate exposed to the air;

[0052] (4) Using double-target co-sputtering supplemented by a stainless steel mask, the pure 90%Pd / 10%Ag alloy is selectively deposited in the deposition hole as the m...

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Abstract

The invention discloses a Pd-based variable capacitive hydrogen sensor and a preparation method thereof. A SiO2 layer grows on a substrate doped single crystal Si in a heat oxidation manner, a deposition hole is formed in the SiO2 layer in a penetrating manner, movable electrode Pd-based materials are deposited in the deposition hole, a vent groove communicated with the deposition hole is formed in the upper surface of the SiO2 layer, and a stationary electrode conducting panel is bonded on the SiO2 layer. Under the condition existing hydrogen, a Pd-based movable electrode in the sensor absorbs the hydrogen to generate reversible volume expansion, the distance between a movable electrode and a static electrode is shortened, and capacitance is enlarged, so that hydrogen concentration is monitored. The deposition hole of the sensor has a horizontal restraint function, volume expansion of the Pd-based movable electrode is accumulated to the height direction, sensor response is improved, response time of the sensor is effectively shortened, and the sensor is manufactured by the aid of standard Si-based micromachining process, so that the sensor is low in cost and power consumption, can be produced in batches and has a wide market prospect.

Description

technical field [0001] The invention belongs to the technical field of gas sensing, and in particular relates to a Pd-based variable capacitance hydrogen sensor and a preparation method thereof. Background technique [0002] Hydrogen is an important industrial raw material, widely used in chemical industry, electronics, metallurgy, food, aerospace and other industrial and scientific research fields. Especially in today's increasingly serious problems such as environmental pollution and energy crisis, the development and utilization of renewable and clean energy such as hydrogen has become particularly urgent. In recent years, hydrogen energy development and utilization technologies represented by photolysis of water to produce hydrogen and hydrogen fuel cells have made great progress, and hydrogen fuel cell-driven cars and portable devices have also appeared. However, the development of hydrogen sensing technology is relatively backward, which greatly hinders the populariza...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/22
CPCG01N27/227
Inventor 赵蒙高炬
Owner SUZHOU UNIV OF SCI & TECH
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