Fully depleted iron electric side gate single nanometer wire near infrared electro photonic detector and preparation method

Abstract

The invention discloses a fully depleted iron electric side gate single nanometer wire near infrared electro photonic detector and preparation method. The detector device has the preparation steps of physically transferring the CVD growth InP nanometer to the Si substratum of SiO2 oxide layer, utilizing the electronic beam exposure technique fabrication source and the drain side gate electrode, and spin coating the ferroelectric polymer membrane, and preparing into an iron electric side gate nanometer wire electro photonic detector with side railing structure. The electro photonic detector utilizes a unique side railing appliance item structure, and through the ferroelectric polymer material negative polarizes the produced ultra strong electrostatic field to completely deplete the intrinsic current carrier caused by defects or pits in the nanometer wire ditch way, thereby obviously lowers the dark current of the detector under gateless voltage, substantially increases the signal-noise ratio and detection ability of the appliance item. Single piece InP and CdS nanometer wire electro photonic detector under the control of ferroelectric materials both displays ultra high detection rate in a near infrared and visible optical band. The electro photonic detector has the advantage of low dark current, high detection rate, low voltage consumption and quick response.

Description

technical field [0001] The present invention relates to the design and testing of ferroelectric polymer materials and detectors with side gate structure combined with nanowires, and specifically refers to the use of this unique side gate device structure, and the use of P(VDF-TrFE) ferroelectric polymerization The ultra-strong electrostatic field generated by the negative polarization of the material can completely deplete the intrinsic carriers generated by defects or traps in the nanowire channel, thereby greatly reducing the dark current of the detector without gate voltage and improving the device performance. signal-to-noise ratio and detection capability. Background technique [0002] One-dimensional semiconductor nanowires have attracted extensive attention of scientists due to their special optical, electrical, magnetic and other physical and chemical properties and the exotic properties of nanostructures. The forefront of today's nanomaterials research field. As a...

AI Technical Summary

Problems solved by technology

However, photodetectors based on these semiconductor nanowires will generate high intrinsic carrier concentrations due to their large specific surface area, surface states, and lattice defects, which to some extent lead to devices with large dark currents, which seriously Affects the photodetection performance of the device

Images