Fully depleted iron electric side gate single nanometer wire near infrared electro photonic detector and preparation method

A technology of electrical detectors and near-infrared light, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems that affect the optical detection performance of devices, high intrinsic carrier concentration, and large dark current of devices, so as to improve the detection ability, Suppress dark current and reduce the effect of dark current

Active Publication Date: 2017-02-22
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

However, photodetectors based on these semiconductor nanowires will generate high intrinsic carrier concentrations due to their large specific surface area, sur...

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  • Fully depleted iron electric side gate single nanometer wire near infrared electro photonic detector and preparation method
  • Fully depleted iron electric side gate single nanometer wire near infrared electro photonic detector and preparation method
  • Fully depleted iron electric side gate single nanometer wire near infrared electro photonic detector and preparation method

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Embodiment Construction

[0025] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings:

[0026] The invention develops a fully depleted ferroelectric side grid single nanowire photodetector. The ultra-strong electrostatic field generated by the negative polarization of the P(VDF-TrFE) ferroelectric polymer material completely depletes the intrinsic carriers in the nanowire channel, thus greatly reducing the detector performance without gate voltage. Dark current improves the detection performance of the device.

[0027] Specific steps are as follows:

[0028] 1. InP and CdS nanowires were prepared on P-type Si substrate by chemical vapor deposition (CVD) method. First, a 1nm-thick Au film was thermally evaporated on the Si substrate, and an appropriate amount of high-purity InP (or CdS) powder was placed on a ceramic boat and placed in the center of the quartz tube. The tube furnace around the quartz tube could heat the syst...

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Abstract

The invention discloses a fully depleted iron electric side gate single nanometer wire near infrared electro photonic detector and preparation method. The detector device has the preparation steps of physically transferring the CVD growth InP nanometer to the Si substratum of SiO2 oxide layer, utilizing the electronic beam exposure technique fabrication source and the drain side gate electrode, and spin coating the ferroelectric polymer membrane, and preparing into an iron electric side gate nanometer wire electro photonic detector with side railing structure. The electro photonic detector utilizes a unique side railing appliance item structure, and through the ferroelectric polymer material negative polarizes the produced ultra strong electrostatic field to completely deplete the intrinsic current carrier caused by defects or pits in the nanometer wire ditch way, thereby obviously lowers the dark current of the detector under gateless voltage, substantially increases the signal-noise ratio and detection ability of the appliance item. Single piece InP and CdS nanometer wire electro photonic detector under the control of ferroelectric materials both displays ultra high detection rate in a near infrared and visible optical band. The electro photonic detector has the advantage of low dark current, high detection rate, low voltage consumption and quick response.

Description

technical field [0001] The present invention relates to the design and testing of ferroelectric polymer materials and detectors with side gate structure combined with nanowires, and specifically refers to the use of this unique side gate device structure, and the use of P(VDF-TrFE) ferroelectric polymerization The ultra-strong electrostatic field generated by the negative polarization of the material can completely deplete the intrinsic carriers generated by defects or traps in the nanowire channel, thereby greatly reducing the dark current of the detector without gate voltage and improving the device performance. signal-to-noise ratio and detection capability. Background technique [0002] One-dimensional semiconductor nanowires have attracted extensive attention of scientists due to their special optical, electrical, magnetic and other physical and chemical properties and the exotic properties of nanostructures. The forefront of today's nanomaterials research field. As a...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/0352H01L31/0224H01L31/18
CPCH01L31/022425H01L31/0352H01L31/101H01L31/18Y02P70/50
Inventor 胡伟达王建禄郑定山骆文锦王鹏陈效双陆卫
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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