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Method for preparing perovskite solar cell mesoporous layer by means of anodic oxidation etching

A solar cell, anodizing technology, applied in surface reaction electrolytic coatings, coatings, circuits, etc., can solve the problems of complex preparation methods, disordered structures unfavorable to photogenerated electronic interfaces, etc., and achieve simple methods, electron separation and transmission performance. Good and efficient effect

Inactive Publication Date: 2017-02-22
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of traditional titanium dioxide mesoporous not only has complex preparation methods, but also requires high-temperature hydrothermal preparation of precursor powder, and the disordered structure is not conducive to photogenerated electrons passing through the interface between nanoparticles.

Method used

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  • Method for preparing perovskite solar cell mesoporous layer by means of anodic oxidation etching
  • Method for preparing perovskite solar cell mesoporous layer by means of anodic oxidation etching
  • Method for preparing perovskite solar cell mesoporous layer by means of anodic oxidation etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] The feeding ratio is argon, the total pressure is controlled to 1Pa, the distance between the target and the substrate is 8cm, the initial chamber temperature is kept at room temperature, and the DC power supply (electric power is 400W) is turned on, the pure titanium target is sputtered, and the deposition The time is 20 minutes. Before sputtering the titanium film, the sample has deposited a dense layer of titanium dioxide on the FTO substrate. The specific method includes: using titanium as the target material, argon as the sputtering gas, oxygen as the reaction gas, and the total pressure can be 1.5Pa . The target-to-substrate distance can be 8 cm. The power of the DC power supply applied to the target may be 700W. The deposition temperature may be below 80°C. The deposition time may be 15 minutes. The background vacuum is lower than 10 -4 Pa. Then take out the sample deposited with a layer of uniform titanium metal film, blow the dust on the surface by compre...

Embodiment 2

[0061] The feeding ratio is argon, the total pressure is controlled to 1Pa, the distance between the target and the substrate is 8cm, the initial chamber temperature is kept at room temperature, and the DC power supply (electric power is 400W) is turned on, the pure titanium target is sputtered, and the deposition The time is 20 minutes. Wherein, before sputtering the titanium film, the sample had deposited a dense layer of titanium dioxide on the FTO substrate (see Example 1 for the preparation method). Then take out the sample deposited with a layer of uniform titanium metal film, blow the dust on the surface by compressed air, and carry out anodic oxidation treatment. Wherein the voltage is 20 volts, the time is 60 minutes, the electrolyte is composed of ethylene glycol, polyethylene glycol, water and 30% ammonium fluoride solution, and its proportioning ratio is 100:30:1:0.5;

[0062] Annealing the processed sample takes 1 hour at every 100°C temperature rise, and keeps i...

Embodiment 3

[0064] The feeding ratio is argon, the total pressure is controlled to 1Pa, the distance between the target and the substrate is 8cm, the initial chamber temperature is kept at room temperature, and the DC power supply (electric power is 400W) is turned on, the pure titanium target is sputtered, and the deposition The time is 20 minutes. Wherein, before sputtering the titanium film, the sample had deposited a dense layer of titanium dioxide on the FTO substrate (see Example 1 for the preparation method). Then take out the sample deposited with a layer of uniform titanium metal film, blow the dust on the surface by compressed air, and carry out anodic oxidation treatment. Wherein the voltage is 25 volts, the time is 60 minutes, the electrolyte is composed of ethylene glycol, polyethylene glycol, water and 30% ammonium fluoride solution, and its proportioning ratio is 100:30:1:0.5;

[0065] Annealing the processed sample takes 1 hour at every 100°C temperature rise, and keeps i...

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Abstract

The invention relates to a method for preparing a perovskite solar cell mesoporous layer by means of anodic oxidation etching. The method comprises the following steps: depositing a pure titanium thin film on the surface of a substrate by a DC magnetron sputtering method; placing the pure titanium film in an electrolytic solution, subjecting the pure titanium film to anodic oxidation at 5 to 25V for 5 to 60 minutes, or subjecting the pure titanium film to anodic oxidation at 10 to 15V for 20 to 60 minutes and then subjecting the pure titanium film to anodic oxidation at the voltage over 15V but less than or equal to 25V for 20 to 60 minutes; and performing thermal treatment on the pure titanium film subjected to the anodic oxidation at 100 to 500 degrees centigrad for 1 to 5 hours to obtain a titanium oxide mesoporous layer. In the invention, method prepares the titanium oxide mesoporous layer for the perovskite solar cell with different thickness and different morphology at low temperature (room temperature) by means of the combination of DC magnetron sputtering physical vapor deposition and anodic oxidation treatment.

Description

technical field [0001] The invention belongs to the field of inorganic nanometer materials, and in particular relates to a method for preparing a titanium dioxide mesoporous layer for a perovskite solar cell by applying anodic oxidation etching. Background technique [0002] In recent years, under the background of gradually intensifying energy crisis and deepening environmental pollution, the global field of optoelectronic research has made great progress, and has become one of the most promising and strategic research hotspots in this century. In this field, due to low cost, simple process and excellent performance, perovskite solar cells have become a research hotspot in the field of optoelectronic devices. The solar conversion efficiency of the solar cell first proposed in 2009 was only 4%. After 7 years of development, the certified efficiency has now reached 22%, surpassing the current photoelectric conversion efficiency of amorphous silicon solar cells and copper indi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48C23C14/35C25D11/26
CPCC23C14/35C25D11/26H10K30/00Y02E10/549
Inventor 金平实黄爱彬雷磊周奕杰包山虎
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI