Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of patterned polyethylene 4-thiol nickel thin film and device

A polyethylene tetrathiol and patterning technology, which is applied in the manufacture/processing of thermoelectric devices, and the material of the junction leads of thermoelectric devices, can solve the problems of difficult laser etching, plasma sputtering etching, hindering film growth, Difficulty and other problems, to achieve the effect of not easy lithography, easy preparation and low cost

Active Publication Date: 2017-03-22
INST OF CHEM CHINESE ACAD OF SCI
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the film has the characteristics of infusibility and insolubility, and the patterning process is difficult, and it is not easy to be etched by laser etching or plasma sputtering; the synthesis process requires more than ten hours of electrochemistry in a solvent, and it is not enough to simply clip a template on the substrate , the solvent will permeate in; only polymers are used as the template, because the surface is uneven, which hinders the growth of the film; the film and the substrate are firmly bonded, and it is not easy to use the engraving technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of patterned polyethylene 4-thiol nickel thin film and device
  • Preparation method of patterned polyethylene 4-thiol nickel thin film and device
  • Preparation method of patterned polyethylene 4-thiol nickel thin film and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036]Example 1. Patterning of nickel polyethylene tetrathiol and preparation of N-type flexible devices

[0037] 1. Patterning of polyethylene tetramercaptan nickel

[0038] according to figure 1 Shown flow chart prepares the patterned polyethylene tetramercaptide nickel, concrete steps are as follows:

[0039] (1) Preparation of patterned polyethylene tetrathiol nickel film template:

[0040] 1-1) According to the pre-designed pattern (6*18 rectangles of 2*3mm, the distance between each rectangle is 2mm), pattern the PDMS coating on the substrate PET surface to obtain a polymer template; the uncovered PDMS coating on the substrate The blank part of the layer forms the pattern, the specific steps are as follows:

[0041] Use the glue dispenser (2400, EFD) to program, design 6*18 rectangles of 2*3mm, the distance between each rectangle is 2mm, under the condition of gas pressure 30psi, movement speed 1mm / s, draw the rectangle with room temperature vulcanized silicone rubber...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a patterned polyethylene 4-thiol nickel thin film and device. The method comprises the following steps of (1) patterning a polymer coating on the surface of a substrate according to a predesigned pattern to obtain the substrate covered with a polymer template, and taking a blank part on the surface of the substrate as a designed pattern; and (2) carrying out stirring reaction on potassium methoxide and 1,3,4,6-tetrathia-cyclopentene-2,5-diketone into an organic solvent in an inert atmosphere, adding nickel chloride for reaction, carrying out filtration after reaction is completed, collecting filtrate, transferring the filtrate to an electrolytic tank, fixing the substrate covered with the polymer template on a working electrode, carrying out oxidizing coordination polymerization reaction by adopting a constant potential oxidation method and a three-electrode system, completely covering the polymer template and the surface of the blank part on the surface of the substrate with a polyethylene 4-thiol nickel thin film and removing the polymer coating to obtain the patterned polyethylene 4-thiol nickel thin film on the blank part. According to the method, the sizes, the quantity and the properties of patterning devices can be well controlled, the process is simple and the cost is low.

Description

technical field [0001] The invention belongs to the field of organic thermoelectric materials, and in particular relates to a patterned polyethylene tetrathiol nickel thin film and a preparation method of a device. Background technique [0002] As the largest carbon emitter, China will face a severe test in the future to achieve rapid economic growth and build a friendly environment. Research and development of emerging energy industries is also a top priority during the 13th Five-Year Plan period. As a kind of environment-friendly energy conversion materials, thermoelectric materials have gradually attracted people's attention. Seebeck effect, Peltier effect, and Thomson effect provide theoretical support for the application of thermoelectric materials. We can use thermoelectric materials to realize temperature difference power generation, and we can also make thermoelectric materials heat or cool under the drive of electric field; moreover, the refrigeration and power ge...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/24H10N10/01H10N10/856
CPCH10N10/856H10N10/01
Inventor 朱道本刘力瑶孙源慧徐伟狄重安孙祎萌
Owner INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products