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Application of polydopamine-modified n-type semiconductor materials in the construction of optoelectronic immunosensors

An n-type semiconductor, immunosensor technology, applied in the field of biosensors, can solve the problems of cumbersome construction steps, poor device stability and repeatability, etc., and achieve increased photocurrent response, simple structure, good specificity and stability. Effect

Inactive Publication Date: 2019-03-08
SOUTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally speaking, in addition to integrating the semiconductor-sensitizing dyes required for photoelectric conversion, the photoelectrode also needs to provide a mild and friendly interface for the immobilization of probe antibodies, so the construction steps are cumbersome, and the device is stable and repeatable. Therefore, there is an urgent need for a photoelectric immunosensor with simple preparation and reliable performance

Method used

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  • Application of polydopamine-modified n-type semiconductor materials in the construction of optoelectronic immunosensors
  • Application of polydopamine-modified n-type semiconductor materials in the construction of optoelectronic immunosensors
  • Application of polydopamine-modified n-type semiconductor materials in the construction of optoelectronic immunosensors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Polydopamine modified semiconductor zinc oxide rods to construct photoelectric immunosensors, the specific steps are as follows:

[0036] (1) Grow ZnO nanorods on the FTO glass sheet: first, the conductive surface of the FTO glass sheet after being ultrasonically cleaned by acetone, absolute alcohol, and secondary water in turn leans against the wall of the beaker containing the growth solution, Among them, each cleaning solution was ultrasonically cleaned 3 times, each time for 5 minutes; then, the beaker was placed in a 75°C water bath for 2 hours; finally, the glass sheet was taken out, rinsed with water twice, and then dried with nitrogen to obtain ZnO / FTO electrode, the preparation method of the growth solution is to add 2.97g zinc nitrate hexahydrate, 3mL ammonia water, 1mL ethylenediamine into 100mL secondary water successively;

[0037] (2) Growth of polydopamine film on ZnO / FTO electrode: the ZnO / FTO electrode obtained in step (1) was immersed in the dopamine ...

Embodiment 2

[0044] The PDA / ZnO / FTO electrode prepared in Example 1 was used as the working electrode, the platinum sheet and the saturated calomel electrode were respectively the counter electrode and the reference electrode, 1mM ascorbic acid was added as the electrolyte in 0.1M PBS, the applied voltage was 0V, and the xenon lamp (The power is 500W, the power density is 100mW / cm 2 ) as the light source, record the transient current curve, the obtained results are as follows Figure 5 shown by Figure 5 It can be seen that after 20 dark state-bright state cycles, the decay of the photocurrent is less than 5%, indicating that the electrode has good stability. Among them, the electron transfer principle of the polydopamine-zinc oxide nanorod electrode on the PDA / ZnO / FTO electrode in the ascorbic acid solution is as follows: Image 6 shown by Image 6 It can be seen that under light conditions, the conjugated macrocyclic structure in polydopamine effectively absorbs photon energy, and the...

Embodiment 3

[0046] 1. The PDA / ZnO / FTO electrode prepared in Example 1 is used as the working electrode, the platinum sheet and the saturated calomel electrode are respectively the counter electrode and the reference electrode, 1mM ascorbic acid is added as the electrolyte in 0.1M PBS, and the applied voltage is 0V , xenon lamp (power is 500W, power density is 100mW / cm 2 ) as the light source, record the transient current curve, the result is as follows Figure 7 (a);

[0047] 2. The goat anti-mouse IgG monoclonal antibody / PDA / ZnO / FTO electrode prepared in Example 1 is used as the working electrode, the platinum sheet and the saturated calomel electrode are respectively the counter electrode and the reference electrode, and 0.1M PBS is added 1mM ascorbic acid is used as the electrolyte, the applied voltage is 0V, the xenon lamp (the power is 500W, the power density is 100mW / cm 2 ) as the light source, record the transient current curve, the result is as follows Figure 7 (b);

[0048] ...

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Abstract

The invention relates to an application of a polydopamine modified n-type semiconductor material in building a photoelectric immune sensor. A polydopamine film modified n-type semiconductor material is used to building the photoelectric immune sensor, wherein polydopamine has the capacity of absorbing visible light and can be used as an effective photosensitizer to split charges and transfer electrons, so that the photocurrent response of the sensor can be increased; and meanwhile, a molecular structure of the polydopamine has a phthalates-dihydroxyl structure, the functional group can react with an amino group in protein, so that a biological probe molecule can be fixed without an additional intermediate medium, the structure of the photoelectric immune sensor is simpler, the stability of the photoelectric immune sensor is ensured, the built photoelectric immune sensor has high sensitivity, specificity and stability, suitable for detecting all proteins and capable of being used for detecting other biological molecules such as DNA, cells and the like.

Description

technical field [0001] The invention belongs to the technical field of biosensors, and in particular relates to the application of polydopamine-modified n-type semiconductor materials in building photoelectric immune sensors. Background technique [0002] Photoelectric immunosensing is a method that uses photocurrent to detect biomolecules. The basic principle is that the antigen-antibody binding reaction that occurs on the surface of the photoelectrode hinders the generation of photocurrent, and the current on the same photoelectrode before and after the antigen-antibody reaction is detected. Response, the antigen can be directly quantitatively detected without any labeled antibody. Generally speaking, in addition to integrating the semiconductor-sensitizing dyes required for photoelectric conversion, the photoelectrode also needs to provide a mild and friendly interface for the immobilization of probe antibodies, so the construction steps are cumbersome, and the device is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/327G01N33/68G01N33/574G01N33/569G01N33/577
CPCG01N27/327G01N33/569G01N33/574G01N33/577G01N33/68G01N2333/435G01N2333/47
Inventor 胡卫华杨艳
Owner SOUTHWEST UNIV
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