Preparation method for silicon-based negative electrode material with secondary cluster structure and used for lithium ion battery

A technology for silicon-based negative electrode materials and lithium-ion batteries, which can be used in battery electrodes, secondary batteries, structural parts, etc., can solve the problems of high energy consumption, weak binding force, and high production costs in high-temperature processing, and achieve good rate performance and improved The effect of combining force and reducing production cost

Active Publication Date: 2017-07-07
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is an improvement on the evaporation-driven method, simplifies the operation steps, and realizes Si@SiO through dry pressing and high temperature (600°C) heat treatment.

Method used

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  • Preparation method for silicon-based negative electrode material with secondary cluster structure and used for lithium ion battery
  • Preparation method for silicon-based negative electrode material with secondary cluster structure and used for lithium ion battery
  • Preparation method for silicon-based negative electrode material with secondary cluster structure and used for lithium ion battery

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0031] Example 1

[0032] (1) Disperse 0.2 g of silicon particles with a particle size of 30-50 nanometers in a mixed solution containing 50 mL of water and 200 mL of ethanol, and then add 2.5 mL (0.0335 mol) of 25% ammonia water, drop by drop. 2.0mL ethyl silicate, stirred for 12h, centrifuged, and dried to obtain Si@SiO 2 particle.

[0033] (2) The Si@SiO prepared in (1) 2 Take 0.3g of the particles and disperse them in 18mL of ethylene glycol, add 0.5mL of water, add 0.126g (1mmol) of manganese chloride and 67μL (1mmol) of ethylenediamine, disperse uniformly by ultrasonic, put it in a hydrothermal kettle, React for 6 hours, centrifuge and dry to obtain Si@SiO 2 Clusters.

[0034] (3) Take the Si@SiO prepared in (2) 2 Cluster 0.2g, dispersed in 60mL water, uniformly dispersed by ultrasonic, add 0.2mL (0.00268mol) of 25% ammonia water, 0.0182g (0.05mmol) of cetyltrimethylammonium bromide, stir for 1h, add 0.048g of resorcinol, 0.067mL (0.86mmol) of a 36.5% aqueous formaldehyde sol...

Example Embodiment

[0038] Example 2

[0039] (1) Disperse 0.2 g of silicon particles with a particle size of 30-50 nanometers in a mixed solution containing 50 mL of water and 200 mL of ethanol, and then add 2.5 mL (0.0335 mol) of 25% ammonia water, drop by drop. 2.0mL ethyl silicate, stirred for 12h, centrifuged, and dried to obtain Si@SiO 2 particle.

[0040] (2) The Si@SiO prepared in (1) 2 Take 0.3g of the particles and disperse them in 18mL of ethylene glycol. Add 0.5mL of water, add 0.173g (1mmol) of manganese acetate and 67μL (1mmol) of ethylenediamine. Disperse uniformly by ultrasonic and put them in a hydrothermal kettle at 200℃. React for 6h, centrifuge and dry to obtain Si@SiO 2 Clusters.

[0041] (3) Take the Si@SiO prepared in (2) 2 Cluster 0.2g, dispersed in 60mL water, uniformly dispersed by ultrasonic, add 0.2mL (0.00268mol) of 25% ammonia water, 0.0182g (0.05mmol) of cetyltrimethylammonium bromide, stir for 1h, add Resorcinol 0.048g, mass fraction 36.5% formaldehyde aqueous solution ...

Example Embodiment

[0042] Example 3

[0043] (1) Disperse 0.2 g of silicon particles with a particle size of 30-50 nanometers in a mixed solution containing 50 mL of water and 200 mL of ethanol, and then add 2.5 mL (0.0335 mol) of 25% ammonia water, drop by drop. 2.0mL ethyl silicate, stirred for 12h, centrifuged, and dried to obtain Si@SiO 2 particle.

[0044] (2) The Si@SiO prepared in (1) 2 Take 0.3g of the particles and disperse them in 18mL of ethylene glycol. Add 0.5mL of water, add 0.13g (1mmol) of cobalt chloride and 67μL (1mmol) of ethylenediamine. Disperse uniformly by ultrasonic, and put it in a hydrothermal kettle at 200℃. React for 6 hours, centrifuge and dry to obtain Si@SiO 2 Clusters.

[0045] (3) Take the Si@SiO prepared in (2) 2 Cluster 0.2g, dispersed in 60mL water, uniformly dispersed by ultrasonic, add 0.2mL (0.00268mol) of 25% ammonia water, 0.0182g (0.05mmol) of cetyltrimethylammonium bromide, stir for 1h, add Resorcinol 0.048g, mass fraction 36.5% formaldehyde aqueous solution...

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Abstract

The invention relates to a preparation method for a silicon-based negative electrode material with a secondary cluster structure and used for a lithium ion battery. In a preparation process of a Si@SiO<2> cluster, a solvothermal method is adopted; a compound is generated on the surfaces of Si@SiO<2> particles in an in-situ manner to realize chemical bonding between the Si@SiO<2> particles, so that the bonding force between the Si@SiO<2> particles in the Si@SiO<2> cluster is greatly improved; in addition, subsequent high-temperature heat treatment is not needed, so that production cost is lowered; and in addition, the surface of the Si@SiO<2> cluster is further coated with carbon, and hydrofluoric acid treatment is carried out to obtain the material with the secondary cluster structure, wherein the material has high cycling performance and rate capability.

Description

technical field [0001] The invention relates to the field of preparation of negative electrode materials for lithium ion batteries, in particular to a method for preparing silicon-based negative electrode materials for lithium ion batteries with a secondary cluster structure. Background technique [0002] As the anode material of lithium-ion batteries, silicon has a theoretical mass specific capacity 10 times higher than that of commercial carbon materials, so its research and development has attracted much attention. The main disadvantages of silicon anode materials are as follows: (1) There is a large volume change (about 300%) during the cycle, which causes the degradation of the material structure and the instability of the solid-electrolyte phase interface on the material surface, and poor cycle performance; (2) The intrinsic conductivity is low, and the high-current charge and discharge performance is poor; (3) when the material size is reduced to the nanometer level, ...

Claims

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Application Information

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IPC IPC(8): H01M4/36H01M4/38H01M4/485H01M4/62H01M10/0525
CPCH01M4/366H01M4/386H01M4/485H01M4/625H01M10/0525Y02E60/10
Inventor 褚有群蒋力陈欢单沈桃
Owner ZHEJIANG UNIV OF TECH
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