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A flexible memristor with biological synapse simulation function and its preparation method

A technology for simulating functions and memristors, applied in the field of flexible memristors and their preparation, can solve the problems of low discharge time plasticity, low discharge rate plasticity, unstable device performance, etc., and is conducive to large-scale mass production, Simple operation and stable device performance

Active Publication Date: 2019-04-12
NANJING UNIV OF POSTS & TELECOMM
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Technical problem to be solved: This application mainly proposes a flexible memristor with biological synapse simulation function and its preparation method, which solves the problems of unstable device performance, high energy consumption, complicated circuit, and short discharge time in the prior art. Aiming at the technical problems of low plasticity and discharge rate plasticity, a flexible memristor device with biological synapse simulation function and its preparation method are provided

Method used

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  • A flexible memristor with biological synapse simulation function and its preparation method
  • A flexible memristor with biological synapse simulation function and its preparation method
  • A flexible memristor with biological synapse simulation function and its preparation method

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Embodiment 1

[0038] Such as figure 1 As shown, a specific preparation method of a flexible memristor with a biological synapse simulation function includes the following:

[0039] Step 1: Form an ITO conductive film on a PET substrate, wipe and clean it with acetone, ethanol and ultrapure water in sequence, and then dry it with nitrogen to form a PET / ITO conductive film.

[0040] Step 2: Treat the PET / ITO conductive film with ultraviolet and ozone for 5 minutes.

[0041] Step 3: Put the PET / ITO conductive film treated with ultraviolet ozone in the second step into the vacuum evaporation system, and evacuate until the pressure in the chamber is lower than 5×10 -5 After Pa, start to evaporate ZnTPP, the evaporation rate is 0.5 Å / s, the substrate temperature is controlled at 230°C, and the crystal oscillator is used to control the thickness at 30 nm; then Al is evaporated 2 o 3-x , the evaporation rate is 0.5 -1 Å / s, and the thickness is controlled at 5 nm by crystal oscillator; finally, ...

Embodiment 2

[0050] Such as figure 1 As shown, a specific preparation method of a flexible memristor with a biological synapse simulation function includes the following:

[0051] Step 1: Form an ITO conductive film on a PET substrate, wipe and clean it with acetone, ethanol and ultrapure water in sequence, and then dry it with nitrogen to form a PET / ITO conductive film.

[0052] Step 2: Treat the PET / ITO conductive film with ultraviolet and ozone for 5 minutes.

[0053] Step 3: Put the PET / ITO conductive film treated with ultraviolet ozone in the second step into the vacuum evaporation system, and evacuate until the pressure in the chamber is lower than 5×10 -5 After Pa, start to evaporate ZnTPP, the evaporation rate is 0.5 Å / s, the substrate temperature is controlled at 230°C, and the crystal oscillator is used to control the thickness at 35 nm; then Al is evaporated 2 o 3-x , the evaporation rate is 0.5 Å / s, and the crystal oscillator is used to control the thickness at 10 nm; final...

Embodiment 3

[0057] Such as figure 1 As shown, a specific preparation method of a flexible memristor with a biological synapse simulation function includes the following:

[0058] Step 1: Form an ITO conductive film on a PET substrate, wipe and clean it with acetone, ethanol and ultrapure water in sequence, and then dry it with nitrogen to form a PET / ITO conductive film.

[0059] Step 2: Treat the PET / ITO conductive film with ultraviolet and ozone for 5 minutes.

[0060] Step 3: Put the PET / ITO conductive film treated with ultraviolet ozone in the second step into the vacuum evaporation system, and evacuate until the pressure in the chamber is lower than 5×10 -5 After Pa, start to evaporate ZnTPP, the evaporation rate is 0.5 Å / s, the substrate temperature is controlled at 230°C, and the crystal oscillator is used to control the thickness at 33 nm; then Al is evaporated 2 o 3-x , the evaporation rate is 1 Å / s, and the thickness is controlled by a crystal oscillator at 7 nm; finally, Al ...

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Abstract

The application discloses an organic diode flexible memristor device with biological synapse simulation function and its preparation method. The device adds a modification layer between the cathode-dielectric layer interface, and the whole device is in order from top to bottom: metal cathode layer, modification layer, dielectric layer, anode electrode layer and PET substrate, and the material of the modification layer is aluminum oxide Al 2 o 3 , stable performance, basic synaptic simulation functions can be realized, and can maintain superior memristive performance and biological simulation functions under a certain number of bending times and different bending radii, and at the same time, compared with the same type of device structure, it is easier to design The rate is high, universal, and has important research significance.

Description

technical field [0001] The invention belongs to the technical field of organic diode electric storage and memristor devices, and in particular relates to a flexible memristor with biological synapse simulation function and a preparation method thereof. Background technique [0002] With the rapid improvement of the integration and performance of microelectronic chips following Moore's Law, the traditional storage technology based on complementary metal oxide semiconductor (CMOS) technology is gradually approaching its physical limit, and the "storage wall" problem of computers is also becoming more and more serious. Become more and more serious, these hinder the further development of the computer. Therefore, new storage technologies and computing must be found to develop computers with larger storage capacity and faster processing speed. Based on the research of electronic science, Cai Shaotang put forward a hypothesis in circuit theory from the perspective of symmetry in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/881H10N70/026
Inventor 仪明东李腾飞王来源王智勇朱颖
Owner NANJING UNIV OF POSTS & TELECOMM
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