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A kind of plasmonic graphene nano-silver conductive film and its manufacturing process

A manufacturing process, graphene technology, applied in cable/conductor manufacturing, equipment for manufacturing conductive/semiconducting layers, circuits, etc., can solve the problem of high resistance, easily damaged graphene film, and multiple structural defects of graphene film and other problems, to achieve the effect of enhancing the conductivity and increasing the carrier concentration

Active Publication Date: 2018-12-14
江苏瑞慕科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The graphene film prepared by the first method is easily damaged
The graphene film prepared by the second method has more structural defects and higher resistance

Method used

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  • A kind of plasmonic graphene nano-silver conductive film and its manufacturing process

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Experimental program
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preparation example Construction

[0018] In an embodiment of the present invention, graphene nano-silver is mainly prepared by the following method: after mixing graphene with a ratio of 2-4g:1L with water, ultrasonically treat it for 150-200min to obtain the first mixed solution; After mixing with silver nitrate solution, drip ammonia water until the solution is clear to obtain silver ammonia solution, the mass ratio of sodium hydroxide in sodium hydroxide solution to silver nitrate in silver nitrate solution is 0.5-1.5:3. Mix tartaric acid, glucose and water with a mass ratio of 1:10-15:220-300 to obtain the second mixed solution, keep the second mixed solution at a temperature of 100-120°C for 30-40min and then cool to 25-30°C , and then mix the second mixed solution with ethanol to obtain a third mixed solution, the volume ratio of the second mixed solution to ethanol is 1-8:16. Mix the silver ammonia solution and the third mixed solution with the first mixed solution in turn, react for 1-4min under ultras...

Embodiment 1

[0025] A process for making a plasma graphene nano-silver conductive film, comprising: adding a mixture of 1 part by weight of graphite powder and 0.52 parts by weight of sodium nitrate to 20 mL of concentrated sulfuric acid in a water bath at 1 °C, and then slowly adding 3 parts by weight Potassium permanganate was reacted for 100 minutes, and then reacted in a water bath at a temperature of 40°C for 20 minutes to obtain the fourth mixed solution; 82 mL of deionized water was added to the fourth mixed solution, and the reaction was carried out at a temperature of 92°C for 33 minutes; then 62 mL of Stop the reaction in deionized water, add 15mL of hydrogen peroxide with a mass concentration greater than 30% to react for 14min, then add 42mL of a hydrochloric acid solution with a mass concentration of 37%; then perform low-speed centrifugal washing to remove excess acid and by-products, and wash the graphite oxide Dispersed in deionized water, ultrasonically treated for 40 min, ...

Embodiment 2

[0030] A process for making a plasma graphene nano-silver conductive film, comprising: adding a mixture of 1 part by weight of graphite powder and 0.52 parts by weight of sodium nitrate to 20 mL of concentrated sulfuric acid in a water bath at 2°C, and then slowly adding 2.9 parts by weight Potassium permanganate was reacted for 120 minutes, and then reacted in a water bath at 35°C for 25 minutes to obtain the fourth mixed solution; 75mL of deionized water was added to the fourth mixed solution, and reacted for 30min at a temperature of 93°C; then 60mL of Stop the reaction in deionized water, add 15mL of hydrogen peroxide with a mass concentration greater than 30% to react for 15min, then add 38mL of a hydrochloric acid solution with a mass concentration of 36%; then perform low-speed centrifugal washing to remove excess acid and by-products, and wash the graphite oxide Dispersed in deionized water, ultrasonically treated for 42 minutes, added to hydrazine hydrate solution, and...

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Abstract

The invention provides a plasma graphite nano-silver conductive film and a manufacturing technique thereof, and relates to the technical field of conductive films. The manufacturing technique comprises the step of under a condition that the pressure intensity is 120-140Pa, using a plasma enhanced chemical vapor deposition method to depose graphite nano-silver on an organic base sheet with the temperature of 340-360 DEG C, wherein the temperature required by the plasma enhanced chemical vapor deposition method is low and the deposition speed is fast. The obtained plasma graphite nano-silver conductive film is good in quality, few in needle holes and not liable to cracking. The invention also provides the plasma graphite nano-silver conductive film manufactured by use of the above manufacturing technique. The plasma graphite nano-silver conductive film is characterized in that the plasma graphite nano-silver conductive film is few in needle holes, not liable to cracking, low in sheet resistivity, and high in conductivity.

Description

technical field [0001] The invention relates to the technical field of conductive films, and in particular to a plasma graphene nano-silver conductive film and a manufacturing process thereof. Background technique [0002] ITO film is an n-type semiconductor material with high electrical conductivity, high visible light transmittance, high mechanical hardness and good chemical stability, but ITO film resources are limited, and it is used in transparent electrodes for touch panels and solar cells. , graphene, as an alternative resource-limited ITO material, is also expected. [0003] Graphene is a hexagonal honeycomb structure formed by carbon atoms. It is a quasi-two-dimensional material with only one atomic layer thickness. Graphene has a high carrier mobility and has extremely high strength and flexibility. An ideal substitute material for ITO, it also has important applications in flexible conductive film materials. At present, there are two main methods for preparing g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00
CPCH01B13/0026
Inventor 刘刚
Owner 江苏瑞慕科技有限公司