Rapid sintering preparation method of tl-2212 superconducting thin film

Abstract

The invention discloses a rapid sintering preparation method of Tl-2212 superconducting thin film. Silver foil or gold foil is used to seal and wrap the amorphous precursor film containing thallium and the burning target containing thallium, and the Sintering in the environment. The invention includes four processes including the preparation of a precursor film, the preparation of a thallium source accompanying firing target, the rapid temperature-raising sintering of the precursor film in an argon / oxygen environment, and the oxygen-supplementing heat treatment of a primary sample. Compared with the traditional sintering method, the sintering conditions for growing Tl‑2212 thin films using this technology are not affected by the deposition method of the precursor film, the powder particle size of the starting material of the thallium source accompanying firing target and its preparation method, avoiding the Due to the replacement of the manufacturer's raw materials and the pioneering film deposition method, it is necessary to re-explore the sintering process for a long time. At the same time, the method also greatly reduces the amount of the thallium source accompanying the burning target, shortens the heating and cooling time and constant temperature time, reduces the production cost, and improves the repeatability of the experiment.

Description

technical field [0001] The invention relates to the field of thallium superconducting thin film materials. More specifically, the present invention relates to a rapid sintering preparation method of Tl-2212 superconducting thin film. Background technique [0002] Tl 2 Ba 2 CaCu 2 o 8 (Tl-2212) superconducting thin film has a higher critical temperature (T c Up to 110K), high critical current density, and strong moisture resistance are important materials for the development of high-performance high-temperature superconducting electronic devices. [0003] In the current research on the synthesis of Tl-2212 thin films, the main methods for preparing precursor films include magnetron sputtering, pulsed laser deposition, Aerosol, MOCVD, Sol-gel, etc. The sintering processes of these studies have the following common points: (1) It is necessary to provide a thallium source to accompany the firing target to be sintered together with the precursor film; (2) The heating rate o...

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Problems solved by technology

However, this sintering process is greatly affected by the deposition method of the precursor film, the powder particle size of the starting material of the thallium source and firing target, and its preparation method

Changing the manufacturer of raw materials and the deposition method of the precursor film requires a lot of time to re-explore its preparation process

Its reason is: (1) the preparation method of precursor film is different, and the manufacturer of raw material is different, and the size of the amorphous particle of precursor film and accompanying firing target is also different, so Tl 2 o 3 (2) In order to prepare high-quality Tl-2212 films, a dynamic equilibrium must be formed between the Tl volatilization of the precursor film and the Tl supplement provided by the burning target during the high-temperature sintering process; (3) the volatilization temperature The difference caused a huge change in the sintering process, which requires a long time to explore

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