Epitaxial processing method for 395nm short-wavelength UV LED structure
A technology of LED structure and processing method, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as narrow growth temperature window, interface degradation, and reduction of quantum efficiency in quantum wells, achieving low defect density, uniform composition, Enhances the effect of the confinement effect
Active Publication Date: 2017-12-15
NANJING UNIV +1
View PDF3 Cites 6 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Therefore, the growth temperature window of the AlInGaN material MOCVD co-doped film process is relatively narrow, and it is difficult to effectively improve the doping efficiency of In atoms and avoid phase separation.
[0006] 2. The spatial component (strain) fluctuation and component traction effect of AlInGaN material will become more significant as the thickness of the material increases, resulting in the deterioration of the surface morphology of the material and the formation of hexagonal pit V-shaped defects
3. The epitaxial quality of the heterostructure interface between AlInGaN and InGaN is difficult to control, and the huge difference in growth conditions leads to component deviation and interface degradation, thereby reducing the internal quantum efficiency of the quantum well
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] 1. Production equipment and materials:
[0031] 1. Satellite disk type 2-inch 11-piece metal-organic chemical vapor deposition MOCVD preparation system.
[0032] 2. Metal-organic MO growth sources: Trimethylgallium (TMGa), triethylgallium (TEGa), trimethylaluminum (TMAl), and trimethylindium (TMIn) are used as gallium, aluminum, and trimethylindium (TMIn) in the MOCVD growth process, respectively. Metal MO source of indium element.
[0033] 3. Ammonia (NH 3 ) as a nitrogen source.
[0034] 4. MO source intake auxiliary gas path: The growth source and auxiliary gas path are input into the MOCVD reaction chamber through independent pipes and systems.
[0035] 2. Production process steps of epitaxial wafers with 395nm short-wavelength ultraviolet LED structure:
[0036] 1. A two-step growth method is used to grow the GaN support layer. First, the MOCVD system is 2 environment, bake the C-plane sapphire substrate 1 in a high temperature environment of 1100°C, then cool...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses an epitaxial processing method for a 395nm short-wavelength UV LED structure, and belongs to the technical field of semiconductors. The epitaxial processing method comprises the steps of sequentially epitaxially growing a buffer layer, a GaN layer, an InGaN insertion layer, an AlInGaN superlattice template layer and an InGaN / AlInGaN multiple-quantum well (MQW) structure on a substrate, wherein the AlInGaN superlattice template layer is formed by growing 20 layers of short-period InGaN / AlGaN superlattice structure layers; and when growing an InGaN / AlxInyGa1-X-YN MQW structure layer, first growing an AlxInyGa1-X-YN superlattice barrier layer on the AlInGaN superlattice template layer, then growing an InGaN potential well layer on the AlxInyGa1-X-YN superlattice barrier layer, and alternately growing the AlxInyGa1-X-YN superlattice barrier layers and the InGaN potential well layers until finally the AlxInyGa1-X-YN superlattice barrier layer is grown. The internal quantum efficiency of the LED quantum well structure in the invention is improved more than three times.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to gallium nitride (GaN)-based III-nitride film materials and an epitaxy process for LED multi-quantum well structures. Background technique [0002] In recent years, light-emitting diode (LED) devices have been widely used in the field of lighting, but the polarization effect of the GaN-based nitride material system and the high-quality preparation of the LED active layer multi-quantum well structure still restrict the internal quantum efficiency of LED devices. . [0003] Studies have shown that compared with the traditional InGaN / GaN multi-quantum well structure, the use of quaternary alloy Al x In y Ga 1-x-y Replacing GaN with N as the barrier layer material of the quantum well can effectively improve the optoelectronic performance of the LED device. The quaternary alloy AlInGaN material has the following advantages: 1. Changing the composition of Al and...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L33/04H01L33/06H01L33/00
CPCH01L33/0075H01L33/04H01L33/06
Inventor 徐峰陈鹏高峰汤文景张琳华雪梅
Owner NANJING UNIV