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Full-inorganic perovskite Schottky photoelectric detector and preparation method thereof

A technology of photodetectors and inorganic calcium, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as large dark current, and achieve the effects of low cost, fast response recovery speed, and high responsivity

Active Publication Date: 2018-01-12
WUHAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the above detectors are mainly based on Au and CsPbBr 3 The ohmic contact type detector, under the higher applied voltage, the dark current will become very large, which has a very obvious impact on the performance of the detector, so the large dark current is a key factor restricting the development of the detector. In addition, it is limited Due to the size of quantum dots and nanosheets, certain requirements are placed on the size of the channel

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  • Full-inorganic perovskite Schottky photoelectric detector and preparation method thereof
  • Full-inorganic perovskite Schottky photoelectric detector and preparation method thereof
  • Full-inorganic perovskite Schottky photoelectric detector and preparation method thereof

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preparation example Construction

[0041] The preparation of ITO electrodes with left and right structures mainly uses photolithography and magnetron sputtering techniques.

[0042] (1) Photolithography, first use a homogenizer to evenly spin-coat the photoresist on the clean Si / SiO 2 On the substrate, the condition is to rotate at a low speed of 600 rpm for 6 seconds, and then rotate at a high speed of 2000 rpm for 15 seconds; the substrate of the spin-coated photoresist is baked at 100 ° C for 1 min; and then exposed using a mask; Develop after exposure, the ratio of the developer is tetramethylammonium hydroxide: deionized water = 1:10, the development time is 60 seconds, and then rinse in deionized water for 15 seconds; the rinsed substrate is post-baked at 100°C 1min.

[0043] (2) Sputtering, transfer the photolithographic substrate to the magnetron sputtering vacuum chamber, and place the ITO target material, the target material purity is >99.99%, and the background vacuum degree during sputtering is bet...

Embodiment 1

[0048] 1. Substrate cleaning: use the above-mentioned cleaning process for Si / SiO 2 The substrate is cleaned.

[0049] 2. Preparation of ITO electrodes: ITO electrodes were prepared by photolithography and sputtering processes as described above.

[0050] 3. Growth of perovskite micron wires: configure PbI 2 / DMF mixed solution, PbI 2 : The mass ratio of DMF is 1:9.5, stirring at 80°C to dissolve it completely, then adding a certain amount of deionized water to form a supersaturated solution, and then standing at room temperature for 10h. PB 2 Due to the precipitation of recrystallization, PbI was obtained 2 The suspension of micron wires can be stored for a long time; 2 The suspension of micron wires was spin-coated on the substrate with ITO electrodes, and annealed at 100 °C for 10 min to make PbI 2 For better crystallization, put the substrate into 3 mg / ml CsBr methanol solution for 1 hour at room temperature. Take out the substrate, clean it with isopropanol, and dr...

Embodiment 2

[0055] 1. Cleaning of the substrate: same as in Example 1.

[0056] 2. Preparation of ITO electrode: Same as Example 1.

[0057] 3. Growth of perovskite micron wires: configure PbI 2 / DMF mixed solution, PbI 2 : The mass ratio of DMF is 1:7, stirring at 70°C to dissolve it completely, then adding a certain amount of deionized water to form a supersaturated solution, and then standing at room temperature for 12 hours. PB 2 Due to the precipitation of recrystallization, PbI was obtained 2 The suspension of micron wires can be stored for a long time; 2 The suspension of micron wires was spin-coated on the substrate with ITO electrodes, and annealed at 100 °C for 10 min to make PbI 2 Better crystallization; then immerse in 3mg / ml CsBr methanol solution for 2 hours, grow to get CsPbBr 3 Perovskite Microwires. Take out the substrate, clean it with isopropanol, and dry the isopropanol with nitrogen. The obtained samples were annealed at 250 °C for 10 min.

[0058] 4. Test: P...

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Abstract

The invention relates to a full-inorganic perovskite Schottky photoelectric detector and a preparation method thereof. The detector consists of a Si / SiO2 substrate, left and right ITO electrodes and aperovskite microwire. The CsPbBr3 perovskite microwire is synthesized on the substrate in situ by adopting a two-step method, namely the CsPbBr3 perovskite microwire is obtained by firstly synthesizing a PbI2 microwire and then performing ion exchange in a CsBr methanol solution. A Schottky junction is formed by adopting the ITO electrode and perovskite, and quick and excellent ultraviolet-visible light sensitive detection performance is achieved. The microwire consists of nano-particles and has a porous structure, multiple times of scattering can be achieved, and the obtained detector has the advantages of high response, high sensitivity and quick response restoration and the like.

Description

technical field [0001] The invention belongs to the field of nanomaterial preparation and optoelectronic application, and mainly relates to an all-inorganic CsPbBr 3 Ultraviolet-visible Schottky photodetector of perovskite porous micro-wire and its preparation method. technical background [0002] In recent years, the science of optoelectronics has developed very rapidly. As a device that can directly convert optical signals into electrical signals, photodetectors have attracted great attention from researchers, and various types of photodetectors have emerged in an endless stream. At present, commercialized detectors are mainly silicon-based detectors, but silicon-based detectors have poor spectral selectivity, and often need to cooperate with optical filters to achieve spectral selective detection, which increases the production cost and has a very complicated structure, which is not conducive to its further development. develop. Therefore, finding a material with low co...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 方国家桂鹏彬李博睿姚方
Owner WUHAN UNIV
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