Silicon-fluorene derivative for electrogenerated blue-light emitting materials
A technology of blue light materials and derivatives, applied in the field of compounds, can solve the problems of insufficient hole transport, reduced device efficiency, low luminous efficiency, etc., and achieves good industrialization prospects, low power consumption, and improved hole transport.
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Embodiment 1
[0047] The preparation of embodiment 1 compound 5
[0048]
[0049] (1) Synthesis of compound A-2
[0050] Compound A-1 (31.2g, 100mmol) was dissolved in anhydrous ether (300ml), under the protection of nitrogen, the temperature was lowered to -78°C; then butyllithium (1.6mol / L, 128ml, 205mmol) was slowly added dropwise ), then stirred at -78°C for 1 hour, then silicon tetrachloride (17.0g, 100mmol) was slowly added dropwise to the reaction solution; the low temperature (-78°C) was maintained for 1 hour, then naturally rose to room temperature, The crude product of compound A-2 was obtained and used directly for the next reaction without purification.
[0051] (2) Synthesis of compound A-4
[0052] Compound A-3 (17.2 g, 100 mmol), o-bromoiodobenzene (31.1 g, 110 mmol) and potassium carbonate (41.4 g, 300 mmol) were added to acetonitrile (500 ml), and refluxed for 12 hours, then cooled to Filter at room temperature, collect the mother liquor, add water (100ml) and stir fo...
Embodiment 2
[0057] Example 2 Preparation of OLED devices containing compound 18
[0058] Ultrasonic cleaning of the transparent anode electrode ITO substrate in isopropanol for 5 to 10 minutes, and exposure to ultraviolet light for 20 to 30 minutes, followed by plasma treatment for 5 to 10 minutes, and then the treated ITO substrate was placed in the evaporation Evaporation of equipment: first, a layer of 30-50nm NPB is evaporated as a hole transport layer; then compound 18 and 5-10% TBPe are mixed and evaporated as a light-emitting layer; then 20-40nm of Alq3 is evaporated; Plating 0.5-2nm LiF; finally vapor-depositing 100-200nm metal Al to obtain OLED device S1: ITO / NPB / Compound 18: TBPe / Alq3 / LiF / Al.
Embodiment 3
[0059] Example 3 Preparation of OLED devices containing compound 20
[0060] Ultrasonic cleaning of the transparent anode electrode ITO substrate in isopropanol for 5 to 10 minutes, and exposure to ultraviolet light for 20 to 30 minutes, followed by plasma treatment for 5 to 10 minutes, and then the treated ITO substrate was placed in the evaporation Evaporation of equipment: first, a layer of NPB of 30-50nm is evaporated as a hole transport layer; then compound 20 and 5-10% TBPe are mixed and evaporated as a light-emitting layer; then Alq3 of 20-40nm is evaporated as an electron transport layer; then vapor-deposit 0.5-2nm LiF; finally vapor-deposit 100-200nm metal Al to obtain OLED device S2: ITO / NPB / Compound 20: TBPe / Alq3 / LiF / Al.
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