A progressive laser lift-off process for micron-sized sapphire substrates

Abstract

The invention discloses a progressive micron sapphire substrate laser stripping process. The process comprises the following steps: 1) the needed epitaxial layer grows on the surface of the sapphire substrate, and according to needs, the epitaxial layer is subjected to unit area division; 2) according to needs, a conductive insulated material is filled between the unit areas; 3) the epitaxial layer is bonded with a transfer substrate; and 4) according to a counter clockwise or clockwise direction, by using a single beam or double beam laser irradiation mode, point-by-point scanning is carriedout in an outward-to-inward linear progressive scanning mode, separation between the sapphire substrate and the epitaxial layer is realized, and good stripping effects are acquired.

Description

technical field

[0001] The invention belongs to the field of high-precision laser processing, and in particular relates to a progressive micron-level sapphire substrate laser stripping process. Background technique

[0002] Visible and ultraviolet light-emitting diodes (Light Emitting Diodes, referred to as LEDs) based on III-N material systems have gradually realized efficient light emission in infrared, red, green, blue, and ultraviolet bands since the 1960s. Since then, semiconductor lighting technology It has achieved rapid development, and the luminous efficiency of products has been continuously improved. It has begun to replace traditional lighting methods and become the mainstream technology in the market. At this stage, the LED application market has reached hundreds of billions of yuan. Therefore, III-N materials have very broad market development prospects.

[0003] LEDs generally use sapphire material as the epitaxial substrate, and use metal organic chemical vap...

Images