Silicon carbide device and manufacturing method therefor

Abstract

The invention provides a manufacturing method for a silicon carbide device, and the device comprises the steps: 1, providing an N+-SiC substrate, forming an N--SiC epitaxial layer on the N+-SiC substrate, and carrying out the ion implantation at two ends of the N--SiC epitaxial layer to form a P well; 2, carrying out the extension of an N-type trench layer on the surface of the device; 3, carryingout the ion implantation at two ends of the device, and forming an N+ source region and a P+ source region, which are adjacent to each other; 4, growing a gate oxidation layer on the surface of the device, growing a polycrystalline silicon layer above the gate oxidation layer, carrying out the etching, and obtaining a gate electrode; 5, depositing an interlayer medium on the surface of the gate oxidation layer, carrying out the etching of the interlayer medium and the gate oxidation layer, so as to form a contact window of the source electrode and the N+ source region and P+ source region; 6,forming the source electrode and a drain electrode on the front and back surfaces of a device. The invention also provides the silicon carbide device. The method can guarantee the depth of a conductive trench, inhibits the contact interface roughness caused by the injection technology, and simplifies the device preparation process.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a silicon carbide device and a manufacturing method thereof. Background technique [0002] Compared with the first-generation semiconductor represented by silicon and the second-generation semiconductor represented by gallium arsenide, the third-generation semiconductor material silicon carbide (SiC) has a larger band gap and higher critical breakdown than silicon Compared with silicon power devices of the same withstand voltage level, SiC has a higher doping concentration and a smaller epitaxial layer thickness, so the forward conduction resistance can be greatly reduced, and the power loss is greatly reduced; at the same time, carbonization Silicon has high thermal conductivity, high temperature resistance and high electron saturation rate. It is suitable for high-current and high-power applications. It can reduce the requirements for heat dissipation equipm...

AI Technical Summary

Problems solved by technology

Although the use of this structure and process solves the problem of high surface roughness of the channel, the preparation process is complicated and requires - Two more epitaxial growths and one forced JFET region implantation on the epitaxial layer

in P - When the effect of the epitaxial layer is not obvious, it increases the difficulty of tape-out and lengthens the tape-out cycle

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