Glass material for high-sheet-resistance shallow crystallized silicon solar cell as well as preparation method and slurry thereof

Abstract

The invention discloses a glass material for a high-sheet-resistance shallow crystallized silicon solar cell. The glass material is prepared from the following raw materials: 10 weight percent to 30 weight percent of SeO2, 5 weight percent to 10 weight percent of PbO, 10 weight percent to 20 weight percent of WO3, 10 weight percent to 20 weight percent of SiO2, 10 weight percent to 20 weight percent of ZnO, 0 weight percent to 10 weight percent of alkaline earth metal oxide RO and 0 weight percent to 10 weight percent to alkaline earth metal oxide R2O. The invention further discloses a preparation method of the glass material, slurry prepared from the glass material and a preparation method of the slurry. The glass material disclosed by the invention is a Se-Pb-Si-W-Zn oxide system; the glass system has low glass transition temperature and softening temperature and has a relatively good wetting property on silver and silicon; the glass system is applied to a high-sheet-resistance shallow crystallized silicon wafer so that contact resistance is easy to improve; the glass material also has a very good wetting capability on silver powder and can be firmly combined with the silicon wafer, so that the welding pulling force of a silver electrode is improved.

Description

technical field [0001] The invention belongs to the technical field of conductive paste, in particular to a glass frit for high square resistance shallow crystalline silicon solar cells, a preparation method thereof and a paste prepared therefrom. The paste contains conductive metal, glass frit with low lead content and organic The conductive paste of the carrier. Background technique [0002] As we all know, the main factors affecting the efficiency loss of solar cells are: grid line shielding factors, grid lines and their contact resistance factors, and carrier recombination factors. In order to solve these loss factors, the main solution in the market is: "high square resistance, shallow junction, dense planting", that is, to make the square resistance of silicon wafers higher, the PN junction of silicon wafers to be closer to the front surface, and the width of sub-gates of cells to be thinner. More. [0003] The square resistance of the silicon wafer is determined by ...

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Problems solved by technology

Then, the larger the square resistance of the silicon wafer, the more the loss when the current is transmitted laterally. Therefore, more sub-gates are needed to reduce the loss during the lateral transmission of the current. However, the more sub-gates, the greater the shading loss. Therefore, it is The sub-gate needs to be made thinner to reduce the shading area of ​​the electrode

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