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Method for effectively improving yield and quality of single-layer 2D TMDCs

A technology of transition metal chalcogenides and compounds, applied in the field of materials, can solve problems such as crystal defects of two-dimensional layered crystals, quality degradation of single-layer two-dimensional materials, and influence on the gasification rate of reaction precursors, etc., to achieve improved safety and improved Yield, growth size improvement effect

Active Publication Date: 2018-03-20
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Metal oxides (MO x ) As a reflective precursor, due to various factors, the reactive precursor usually has a variety of surface states. During the material synthesis process, these surface states are very likely to affect the gasification rate of the reactive precursor, causing crystal defects in the two-dimensional layered crystal , the prepared MX 2 There are great differences in morphology and optical properties, resulting in the degradation of the quality of single-layer 2D materials

Method used

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  • Method for effectively improving yield and quality of single-layer 2D TMDCs
  • Method for effectively improving yield and quality of single-layer 2D TMDCs
  • Method for effectively improving yield and quality of single-layer 2D TMDCs

Examples

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Embodiment 1

[0032] Example 1 A Method for Effectively Improving the Yield and Quality of Monolayer Two-dimensional Transition Metal Chalcogenides

[0033] with WS 2 The preparation of is example, adopt the equipment shown in schematic diagram (1a), specifically comprise the following steps:

[0034] (1) Add 0.5g WO 3 Put it in the temperature zone 2 (high temperature zone) of the quartz tube and raise the temperature to 500°C. 3 The powder is annealed in the air for 30 minutes at normal pressure to fully oxidize it into W oxide WO 3-X ; Natural cooling to room temperature conditions;

[0035] (2) Clean the cut single-throw sapphire substrate and dry it for subsequent use;

[0036] (3) the WO prepared in step (1) 3-X Placed at position 2 in the quartz tube, place the single-polished sapphire substrate obtained in step (2) facing down on the WO 3-x above, that is, position 3; finally take S powder and place it in position 1 in the quartz tube;

[0037] (4) After the system is sealed, t...

Embodiment 2

[0042] Adopt the equipment shown in schematic diagram (1a), specifically comprise the following steps:

[0043] (1) Add 0.5g of WO 3 Installed in a quartz boat, placed in the center of the plasma generator, evacuated for 5 minutes, then turned on the RF power to the maximum, and introduced a small amount of air into the cavity, and this process lasted for 5 minutes;

[0044] (2) Clean the cut single-throw sapphire substrate and dry it for subsequent use;

[0045] (3) the WO prepared in step (1) 3-X Placed at position 2 in the quartz tube, place the single-polished sapphire substrate obtained in step (2) facing down on the WO 3-x above, that is, position 3; finally take S powder and place it in position 1 in the quartz tube;

[0046] (4) After the system is sealed, the whole system is first pumped to keep the pressure at 15torr and the argon flow rate at 100sccm;

[0047] (5) The heating and cooling of temperature zone 1 and temperature zone 2 are all carried out under the ...

Embodiment 3

[0049] Adopt the equipment shown in schematic diagram (1a), specifically comprise the following steps:

[0050] (1) Add 0.5g WO 3 Place it in the center of the plasma generator, vacuumize it for 5 minutes, then turn on the RF power to the maximum, and pass a small amount of air into the cavity, and this process lasts for 5 minutes;

[0051] (2) WO obtained by plasma treatment in step (1) 3-X Install it in a quartz boat, place it in the temperature zone 2 (high temperature zone) of the quartz tube, and raise the temperature to 500°C. 3 The powder was annealed at atmospheric pressure for 30 minutes in air to fully oxidize it into W oxide WO 3-X ; Natural cooling to room temperature conditions;

[0052] (3) cleaning the cut single-throw sapphire substrate and drying it for subsequent use;

[0053] (4) the WO prepared in step (2) 3-X Placed at position 2 in the quartz tube, place the single-polished sapphire substrate obtained in step (2) facing down on the WO 3-x above, tha...

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Abstract

The invention belongs to the technical field of materials, in particular to a method for effectively improving the yield of single-layer 2D TMDCs. The method comprises the following steps that annealing treatment is carried out on a MOX precursor in an atmosphere environment, or plasma treatment is carried out, or plasma treatment and heat treatment in an atmosphere are carried out at the same time, types and the quantity of oxygen defects on the surface of the precursor are changed, and then the surface valence state of M is changed; then, the treated MOx is taken as an M source; and an X source is S powder or Se powder, and a single-layer MX2 is prepared by a CVD method. According to the method, a suitable pretreatment method is selected, stable supply of the M source can be realized, and the high-yield, large-size and high-quality 2D materials can be prepared under the condition that no hydrogen is provided.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a method for effectively improving the yield and quality of single-layer two-dimensional transition metal chalcogenides. Background technique [0002] Monolayer two-dimensional transition metal dichalcogenides (2D TMDCs) have excellent electrical, optical, thermal, and mechanical properties, and have great application prospects in logic devices, integrated circuits, and optoelectronic devices. 2D TMDCs are a series of layered materials with the chemical formula MX 2 , in which a single-layer TMDC consists of a layer of transition metal M sandwiched between two layers of chalcogen X. When the material is close to or becomes a single layer, TMDC changes from an indirect bandgap to a direct bandgap, showing many characteristics different from bulk materials, such as strong photosensitive characteristics and piezoelectric coupling characteristics, etc. These excellent ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30
CPCC23C16/305
Inventor 李贺楠时玉萌李捷妮
Owner SHENZHEN UNIV
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