A quantum conductance characteristic-controllable nanocontact

Abstract

The invention provides a quantum conductance characteristic-controllable nanocontact. A sandwich structure is formed by a bottom electrode / metallic oxide / a top electrode. The bottom electrode is a conductive material with an oxygen storage function and the top electrode is an inert conductive material. In a working state, a forward voltage is applied between the electrodes, oxygen ions in the metallic oxide migrate and are stored in the bottom electrode to form an oxygen vacancy conductive wire; then a backward voltage is applied and the oxygen ions stored in the bottom electrode return to theoxygen vacancy conductive wire, so that the size of the oxygen vacancy conductive wire is reduced to form a nanocontact. The quantum conductance value of the nanocontact can be controlled by controlling the magnitude of backward voltage, and in particular, by increasing the backward voltage gradually, a nanocontact structure with the conductance value reducing continually at an interval of 0.5 G0can be built, so that the nanocontact structure can be applied to the field of multi-value storage, multi-value logic and neuron simulation.

Description

technical field [0001] The invention relates to the technical field of nanotechnology and information storage, in particular to a nanometer point contact with controllable quantum conductance characteristics. Background technique [0002] Memory is the carrier of information records and plays an important role in national production and life. With the advent of the era of big data, the amount of global information has exploded, and the importance of memory has become more prominent. It has been reported that the integration density and storage capacity of the chip can be increased by reducing the size of the device, but this is not a once-and-for-all solution. Moore's Law has begun to encounter more and more serious challenges in recent years, such as heat generation, power consumption and process difficulty. A series of problems, as well as the von Neumann bottleneck problem. [0003] Resistive variable memory is an emerging information technology, which has many advantag...

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Problems solved by technology

[0004] However, the current nano-point contacts are difficult for practical application due to poor conductivity controllability, fatigue resistance, and high temperature retention.

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