A quantum conductance characteristic-controllable nanocontact

A nano-dot and quantum technology, applied in the field of nanotechnology and information storage, can solve the problems of poor high-temperature retention and difficult practical application, and achieve the effects of excellent high-temperature retention, excellent fatigue resistance, high-temperature retention and stable performance.

Active Publication Date: 2018-04-10
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the current nano-point contacts are difficult for practical application due to poor conductivity controllability, fatigue resistance, and high temperature retention.

Method used

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  • A quantum conductance characteristic-controllable nanocontact
  • A quantum conductance characteristic-controllable nanocontact
  • A quantum conductance characteristic-controllable nanocontact

Examples

Experimental program
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Effect test

Embodiment 1

[0047] In this embodiment, the sandwich structure device such as figure 1 As shown, it includes a bottom electrode, a metal oxide and a top electrode, and the metal oxide is located between the bottom electrode and the top electrode.

[0048] In this embodiment, the bottom electrode adopts ITO with oxygen storage function; the metal oxide adopts hafnium dioxide with uniformly distributed nanometer-sized oxygen vacancy regions in the film, and the thickness is preferably 5nm-15nm; the top electrode adopts an inert Pt film with a thickness of 50nm .

[0049] In this embodiment, the sandwich structure device is prepared by coating method, including the following steps:

[0050] (1) The glass sheet coated with ITO on the surface is used as a substrate, and the substrate is ultrasonically cleaned with acetone, ethanol, and deionized water for 10 minutes, and circulated for 3 times, and then blown dry with nitrogen after taking it out;

[0051] (2) Put the substrate cleaned in ste...

Embodiment 2

[0064] In this embodiment, the sandwich structure device is completely the same as the sandwich structure device in Embodiment 1, and its preparation method is also completely the same as that in Embodiment 1.

[0065] Using Keithley 4200 semiconductor parameter measuring instrument to electrically process and characterize the sandwich structure device as follows:

[0066] (1) Forward voltage action

[0067] This process is the same as the process (1) in Example 1, so that the oxygen ions in hafnium dioxide migrate and inject into the ITO bottom electrode along the oxygen-deficient region, and form oxygen vacancy nano-conductive filaments in the oxygen-deficient region, forming a relatively large conductance value,

[0068] (2) Reverse voltage action

[0069] Then, the top electrode Pt is grounded, and the bottom electrode ITO is gradually applied with a negative pulse voltage, the pulse width is 20s, and the amplitude gradually increases from -0.52V to -1.92V, as Figure 7...

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Abstract

The invention provides a quantum conductance characteristic-controllable nanocontact. A sandwich structure is formed by a bottom electrode/metallic oxide/a top electrode. The bottom electrode is a conductive material with an oxygen storage function and the top electrode is an inert conductive material. In a working state, a forward voltage is applied between the electrodes, oxygen ions in the metallic oxide migrate and are stored in the bottom electrode to form an oxygen vacancy conductive wire; then a backward voltage is applied and the oxygen ions stored in the bottom electrode return to theoxygen vacancy conductive wire, so that the size of the oxygen vacancy conductive wire is reduced to form a nanocontact. The quantum conductance value of the nanocontact can be controlled by controlling the magnitude of backward voltage, and in particular, by increasing the backward voltage gradually, a nanocontact structure with the conductance value reducing continually at an interval of 0.5 G0can be built, so that the nanocontact structure can be applied to the field of multi-value storage, multi-value logic and neuron simulation.

Description

technical field [0001] The invention relates to the technical field of nanotechnology and information storage, in particular to a nanometer point contact with controllable quantum conductance characteristics. Background technique [0002] Memory is the carrier of information records and plays an important role in national production and life. With the advent of the era of big data, the amount of global information has exploded, and the importance of memory has become more prominent. It has been reported that the integration density and storage capacity of the chip can be increased by reducing the size of the device, but this is not a once-and-for-all solution. Moore's Law has begun to encounter more and more serious challenges in recent years, such as heat generation, power consumption and process difficulty. A series of problems, as well as the von Neumann bottleneck problem. [0003] Resistive variable memory is an emerging information technology, which has many advantag...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/011
Inventor 刘钢薛武红李润伟
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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