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A kind of preparation method of metal mesh conductive film

A transparent conductive film and mesh technology, which is applied in the direction of cable/conductor manufacturing, circuits, electrical components, etc., can solve the problems of difficult dispersion, difficult transfer, poor conductivity, etc., achieve strong film adhesion, shorten production cycle, The effect of improving productivity

Active Publication Date: 2021-01-12
SOUTH CHINA NORMAL UNIVERSITY +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, although conductive polymers are suitable for R2R film formation, their chemical composition is unstable and their conductivity is poor; carbon nanotubes have a wide transmission band and stable mechanical properties, but it is difficult to prepare single-character carbon nanometers, which are difficult to disperse and High contact resistance; graphene exhibits many peculiar electrical properties, but its preparation cost is high and transfer is difficult
The metal mesh transparent conductive film has excellent properties of high stability, high electrical conductivity and high light transmittance, and can replace ITO as a transparent electrode material for optoelectronic display devices. On the other hand, current components are being replaced by traditional hard Chips are transitioning to flexible and wearable methods, and the market in this area is growing explosively. Therefore, flexible metal mesh transparent conductive films have broad application prospects, but the existing preparation processes often cannot achieve large-area and flexible transparent conductive films. Continuous production, and the prepared metal mesh conductive film has insufficient adhesion to the flexible substrate, and it is easy to fall off from the flexible substrate during use, causing the problem of short service life

Method used

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  • A kind of preparation method of metal mesh conductive film

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Effect test

Embodiment 1

[0035] The invention provides a method for preparing a metal mesh conductive film, the preparation process of which is as follows: figure 1 As shown, a flexible substrate 1 is taken, and the flexible substrate 1 is made of PET transparent material, and nanospheres 2 are prepared on the flexible substrate 1 by dipping and pulling method, and the nanospheres 2 are made of polystyrene Nano balls, the diameter of the nano balls 2 is 100nm, and the nano balls 2 are etched using an atmospheric pressure plasma etching machine to open the distance between the nano balls 2. The distance between the nanospheres 2 is 30nm, and then the metal layer 3 is prepared by a thermal evaporation process. The material of the metal layer 3 is gold, and the thickness of the metal layer 3 is 50nm. , acetone and deionized water in an ultrasonic cleaning tank to remove the nanoballs 2 on the flexible substrate 1 and the metal layer on the nanoballs, and use a magnetron sputtering process to prepare a tr...

Embodiment 2

[0038] The invention provides a method for preparing a metal mesh conductive film. Take a flexible substrate, use hydrogen peroxide to clean the surface of the flexible substrate, use an air knife to dry the flexible substrate, and then use a plasma cleaning machine to clean the flexible substrate. A flexible substrate, the flexible substrate is made of PI material, and Langmuir-Blodgett (LB) technology is used to prepare nanospheres on the flexible substrate, the nanospheres are silicon dioxide nanospheres, and the nanometer The diameter of the balls is 2000nm, and the atmospheric pressure plasma etching machine is used to etch to open the distance between the nano balls. The distance between the opened nano balls is 300nm, and then the magnetron The metal layer is prepared by a sputtering process, the material of the metal layer is nickel-chromium alloy, the thickness of the metal layer is 1000nm, and the flexible lining is removed successively through an ultrasonic cleaning ...

Embodiment 3

[0041] The invention provides a method for preparing a metal mesh conductive film. Take a flexible substrate, use alcohol to clean the surface of the flexible substrate, use an air dryer to dry the flexible substrate, and then use a plasma cleaning machine to clean the flexible substrate. A flexible substrate, the flexible substrate is made of PI material, and nano-balls are prepared on the flexible substrate by a drop film process. The nano-balls are silicon dioxide nano-balls, and the diameter of the nano-balls is 1000nm, use a heating evaporator to heat and dry the flexible substrate to remove the solvent on the surface of the nanospheres. The panel material of the heating evaporator used is preferably stainless steel, which has excellent corrosion resistance and can be used at high temperatures. No warping and deformation, and then use an atmospheric pressure plasma etching machine to etch to open the distance between the nano-balls. The distance between the nano-balls afte...

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Abstract

The invention discloses a preparation method of a metal net-shaped conductive film. A semiconductor material layer is deposited on the surface of a prepared metal net. An adhesion force between the metal net and a flexible substrate is enlarged. Service life of the metal net-shaped conductive film is prolonged. Continuous and large-area product of the metal net-shaped flexible transparent conductive film can be realized. A production period can be remarkably reduced, and production efficiency is greatly improved. Furthermore the metal net-shaped conductive film which is prepared through the preparation method of the invention has excellent photoelectric performances of high uniformity, high surface film adhesion force, high transmittance, low resistance, high flexibility, etc. The preparation method breaks through restrictions at aspects such as flexibility, transparency, foldability and weight in traditional conductive glass such as ITO.

Description

technical field [0001] The invention relates to the field of transparent conductive films, in particular to a method for preparing a metal mesh conductive film. Background technique [0002] Transparent conductive electrodes play an important role in flat panel displays, photovoltaic cells and other fields, and are indispensable photoelectric functional components. As the leading transparent electrode material in the current market, indium tin oxide (ITO) has encountered the severe challenges of depletion of indium resources, material cost and high energy consumption of vacuum magnetron sputtering. At present, the materials that can replace ITO mainly include conductive polymers, carbon nanotubes and graphene. Among them, although conductive polymers are suitable for R2R film formation, their chemical composition is unstable and their conductivity is poor; carbon nanotubes have a wide transmission band and stable mechanical properties, but it is difficult to prepare single-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01B13/00
CPCH01B13/00H01L31/022433
Inventor 容齐坤辇理赵杰张谦周国富
Owner SOUTH CHINA NORMAL UNIVERSITY