A spray-free crucible for casting polysilicon
A polysilicon and crucible technology, which is applied in the field of preparation of crucible coatings for polysilicon casting, can solve the problems of increasing internal defects of silicon ingots, difficult to achieve effects, and contamination of silicon ingots, so as to increase photoelectric conversion efficiency, reduce the risk of falling off, and improve The effect of yield
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Embodiment 1
[0029] Embodiment 1 prepares high-purity silicon oxynitride
preparation example 1
[0030] Preparation Example 1: Humidify high-purity silicon powder with a purity of 99.99% and a D90 of 0.2 μm with deionized water, so that the mass percentage of water in the silicon powder reaches 0.5%. Then heat the above-mentioned silicon powder to 1200°C, keep it warm for 5 hours, then raise the temperature to 1300°C, keep it warm for 10 hours, during the heating process, an excessive amount of nitrogen-oxygen mixed gas has been passed through, the volume ratio of nitrogen and oxygen is 1:0.01, and the atmosphere pressure is kept at 2 atmospheric pressure. After high-temperature calcination, the temperature is lowered to obtain silicon oxynitride with a purity of 99.2%, the content of silicon oxide is less than 0.1%, the content of silicon nitride is less than 0.1%, and the total amount of metal impurities is less than 100ppm.
preparation example 2
[0031] Preparation Example 2: Humidify high-purity silicon powder with a purity of 99.99% and a D90 of 1 micron with deionized water, so that the mass percentage of water in the silicon powder reaches 1%. Then heat the above-mentioned silicon powder to 1250°C, keep it warm for 10 hours, then raise the temperature to 1450°C, keep it warm for 20 hours. atmospheric pressure. After the high-temperature calcination, the temperature is lowered to obtain silicon oxynitride with a purity of 99.8%, the content of silicon oxide is less than 0.1%, the content of silicon nitride is less than 0.1%, and the total amount of metal impurities is less than 100ppm.
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